Semiconductor device and display unit
A semiconductor device includes a substrate, a first semiconductor auxiliary film, a semiconductor film, a gate insulating film, and a gate electrode. The first semiconductor auxiliary film is provided in a selective region on the substrate. The semiconductor film includes an oxide semiconductor material, and has a low-resistive region in contact with the first semiconductor auxiliary film and a channel region provided in a portion different from the low-resistive region. The gate insulating film covers the semiconductor film from the channel region to at least part of the low-resistive region. The gate electrode is opposed to the channel region of the semiconductor film via the gate insulating film.
1. A semiconductor device comprising:
a substrate;
a first auxiliary film in a selective region on the substrate;
a semiconductor film including an oxide semiconductor material, the semiconductor film having a low-resistive region in contact with the first auxiliary film and a channel region in a portion different from the low-resistive region;
a gate insulating film on the semiconductor film from the channel region to at least part of the low-resistive region, wherein the first auxiliary film is in contact with a face of the low-resistive region of the semiconductor film closest to the substrate;
a gate electrode opposed to the channel region of the semiconductor film via the gate insulating film;
a first electrode on the substrate, the first electrode being electrically coupled to the low-resistive region of the semiconductor film;
a second electrode including the oxide semiconductor material, the second electrode being opposed to at least part of the first electrode; and
a second auxiliary film including a material identical to a constituent material of the first auxiliary film, the second auxiliary film being in contact with the second electrode, wherein the first electrode, the second auxiliary film, and the second electrode are in order on the substrate.
2. The semiconductor device according to claim 1 , wherein the first auxiliary film urges a current to flow via the low-resistive region of the semiconductor film.
3. The semiconductor device according to claim 1 , further comprising:
a hole at a position facing the low-resistive region of the semiconductor film, the hole passing through the gate insulating film; and
a source-drain electrode electrically coupled to the low-resistive region of the semiconductor film via the hole.
4. The semiconductor device according to claim 3 , wherein the first auxiliary film, the semiconductor film, the gate insulating film, the gate electrode, and the source-drain electrode are provided in order on the substrate.
5. The semiconductor device according to claim 1 , wherein the first auxiliary film includes a metal.
6. The semiconductor device according to claim 1 , wherein the first auxiliary film includes aluminum.
7. The semiconductor device according to claim 1 , wherein the first auxiliary film includes a metal oxide.
8. The semiconductor device according to claim 1 , wherein the first auxiliary film includes an indium tin oxide or an indium zinc oxide.