Sequestering compositions and materials
The present disclosure relates to a composition that includes a sequestering material capable of binding a target material, where the sequestering material includes a first component that includes at least one of a functional group, a molecule, an oligomer, or a polymer, and the target material includes at least one of an element, a chemical, and/or a compound. In some embodiments of the present disclosure, the element may include at least one element from at least one of Rows 4, 5, 6, and 7 of the Periodic Table and/or an inner transition metal.
1. A photovoltaic device comprising:
a perovskite layer comprising at least one of lead, tin, or bismuth; and
a sequestering material layer capable of binding at least one of lead, tin, or bismuth, wherein:
the sequestering material layer comprises a first component comprising at least one of a phosphonic group, a phosphate group, a phosphono group, a phosphor group, a phosphoryl group, a hydroxyl group, or a carboxylic acid group.
2. The photovoltaic device of claim 1 , wherein the lead is in a form comprising Pb 2+ .
3. The photovoltaic device of claim 1 , wherein the first component further comprises at least one of hydrogen, nitrogen, sulfur, carbon, or silicon.
4. The photovoltaic device of claim 1 , wherein:
the first component is defined by a structure comprising
5. The photovoltaic device of claim 1 , wherein the first component comprises at least one of P,P′-di(2-ethylhexyl)methanediphosphonic acid, N,N,N′, N′-ethylenediaminetetrakis(methylenephosphonic acid), dimercaptosuccinic acid, ethylenediaminetetraacetic acid, nitrilotriacetic acid, ethylenediaminedisuccinic acid, iminodisuccinic acid, methylglycine diacetic acid, L-Glutamic acid N,Ndiacetic acid, 2-hydroxyethyliminodiacetic acid, ethylenediamine-N,N′-dimalonic acid, ethylenediamine-N,N′-diglutaric acid, 3-hydroxy-2,2-iminodisuccinic acid, 2,6-pyridine dicarboxylic acid, polyethylene glycol, polyvinyl alcohol, or a cellulose-based material.
6. The photovoltaic device of claim 1 , wherein the sequestering material layer further comprises a matrix material.
7. The photovoltaic device of claim 6 , wherein the matrix material comprises at least one of a polymer or an oligomer.
8. The photovoltaic device of claim 6 , wherein the matrix material comprises at least one of a poly(vinyl alcohol), a poly(ethylene oxide), a polyacrylate, a derivative of a polycrylate, a polyvinylpyrrolidone, an oxide, a glass, or a silicone gel.
9. The photovoltaic device of claim 6 , wherein the first component and the matrix material are present at a first ratio between about 0.001 grams of the first component per gram of the matrix material and about 100 grams of the first component per gram of the matrix material.
10. The photovoltaic device of claim 6 , wherein the sequestering material layer is substantially transparent to light having a wavelength between about 300 nm and about 1200 nm.
11. The photovoltaic device of claim 6 , wherein the sequestering material layer has a solubility product constant value, K sp , for at least one of lead, tin, or bismuth between about 10 −60 and about 1.
12. The photovoltaic device of claim 6 , wherein the sequestering material layer has a capacity to absorb water at a second ratio between about 0.01 grams of water per gram of the sequestering material layer and about 100 grams of water per gram of the sequestering material layer.