Display device
A display device includes a first substrate, a display region arranged with a pixel including a light emitting element above the first substrate, a first inorganic insulating layer covering the display region, an organic insulating layer arranged above the first inorganic insulating layer, a second inorganic insulating layer arranged above the organic insulating layer and having a N—H bond total weight measured by an FT-IR method lower than a N—H bond total weight per unit [% area] of the first inorganic insulating layer, and a polarizing plate arranged above the second inorganic insulating layer.
1. A display device comprising:
a first substrate;
a display region arranged with a pixel including a light emitting element above the first substrate;
a first inorganic insulating layer covering the display region;
an organic insulating layer arranged above the first inorganic insulating layer;
a second inorganic insulating layer arranged above the organic insulating layer and having a N—H bond total weight measured by an FT-IR method lower than a N—H bond total weight per unit [% area] of the first inorganic insulating layer; and
a polarizing plate arranged above the second inorganic insulating layer.
2. The display device according to claim 1 , wherein a density of the second inorganic insulating layer is higher than a density of the first inorganic insulating layer.
3. The display device according to claim 1 , wherein an etching rate of 1% by a buffered hydrofluoric acid of the second inorganic insulating layer is slower than an etching rate of the first inorganic insulating layer.
4. The display device according to claim 1 , wherein an etching rate of 1% by a buffered hydrofluoric acid of the second inorganic insulating layer is 7 nm/sec or less.
5. The display device according to claim 1 , wherein a thickness of a surface oxidation region at a side surface of the second inorganic insulating layer is smaller than a thickness of a surface oxidation region at a side surface of the first inorganic insulating layer.
6. The display device according to claim 1 , wherein a thickness of a surface oxidation region of the second inorganic insulating layer is 60 nm or less.
7. The display device according to claim 1 , wherein the second inorganic insulating layer contacts the first inorganic insulating layer at a periphery region surrounding the display region.
8. A display device a comprising:
a first substrate;
a display region arranged with a pixel including a light emitting element above the first substrate;
a first inorganic insulating layer covering the display region;
an organic insulating layer arranged above the first inorganic insulating layer;
a second inorganic insulating layer arranged above the organic insulating layer;
a first electrode arranged above the second inorganic insulating layer;
a third inorganic insulating layer arranged above the first electrode and having a N—H bond total weight measured by an FT-IR method lower than a N—H bond total weight per unit [% area] of the first inorganic insulating layer; and
a second electrode arranged above the third inorganic insulating layer and electrically connected to the first electrode.
9. The display device according to claim 8 , wherein a density of the third inorganic insulating layer is higher than a density of the first inorganic insulating layer.
10. The display device according to claim 8 , wherein an etching rate of 1% by a buffered hydrofluoric acid of the third inorganic insulating layer is slower than an etching rate of the first inorganic insulating layer.
11. The display device according to claim 8 , wherein an etching rate of 1% by a buffered hydrofluoric acid of the third inorganic insulating layer is 7 nm/sec or less.
12. The display device according to claim 8 , wherein a thickness of a surface oxidation region at a side surface of the third inorganic insulating layer is smaller than a thickness of a surface oxidation region at a side surface of the first inorganic insulating layer.
13. The display device according to claim 8 , wherein an oxide thickness from a surface of the third inorganic insulation layer is 60 nm or less.
14. The display device according to claim 8 , wherein the third inorganic insulating layer contacts a side surface of the first inorganic insulating layer and a side surface of the second inorganic insulating layer at a periphery region surrounding the display region.
15. The display device according to claim 8 , wherein the second electrode contacts a side surface of the second inorganic insulating layer at a periphery region surrounding the display region.
16. The display device according to claim 8 , wherein a N—H bond total weight per unit [% area] measured by an FT-IR method of the second inorganic insulating layer is lower than a N—H bond total weight per unit [% area] of the first inorganic insulating layer.
17. The display device according to claim 8 , wherein a density of the second inorganic insulating layer is higher than a density of the first inorganic insulating layer.
18. The display device according to claim 8 , wherein an etching rate of 1% by a buffered hydrofluoric acid of the second inorganic insulating layer is slower than an etching rate of the first inorganic insulating layer.
19. The display device according to claim 8 , wherein an etching rate of 1% by a buffered hydrofluoric acid of the second inorganic insulating layer is 7 nm/sec or less.