Methods of forming group III piezoelectric thin films via removal of portions of first sputtered material

1. A method of forming a piezoelectric thin film, the method comprising:

providing an inert gas and a nitrogen process gas to a process chamber including a substrate and a target comprising one or more Group III elements;

sputtering the one or more Group III elements from the target onto a first surface of the substrate to provide the piezoelectric thin film including a nitride of the one or more Group III elements on the first surface of the substrate, wherein sputtering the one or more Group III elements from the target onto the first surface of the substrate comprises heating the substrate to a temperature in a range between 350 degrees Centigrade to 850 degrees Centigrade;

processing a second surface of the substrate that is opposite the first surface of the substrate to provide an exposed surface of the piezoelectric thin film from beneath the second surface of the substrate, wherein the exposed surface of the piezoelectric thin film comprises a first crystalline quality portion of the piezoelectric thin film;

removing a portion of the exposed surface of the piezoelectric thin film to access a second crystalline quality portion of the piezoelectric thin film that is covered by the first crystalline quality portion of the piezoelectric thin film, wherein the second crystalline quality portion of the piezoelectric thin film has a higher quality than the first crystalline quality portion of the piezoelectric thin film, wherein the second crystalline quality portion of the piezoelectric thin film has a crystallinity of less than 1.0 degree at Full Width Half Maximum (FWHM) to 10 arcseconds at FWHM measured using X-ray diffraction (XRD); and

processing the second crystalline quality portion of the piezoelectric thin film to provide an acoustic resonator device on the second crystalline quality portion of the piezoelectric thin film.

2. The method of claim 1 the piezoelectric thin film comprises AlN, AlScN, AlCrN, HfMgAlN, or ZrMgAlN.

3. The method of claim 2 wherein removing the portion of the exposed surface of the piezoelectric thin film comprises removing 500 Angstroms of the piezoelectric thin film to expose the second crystalline quality portion of the piezoelectric thin film.

4. The method of claim 3 further comprising:

forming a first electrode on the second crystalline quality portion of the piezoelectric thin film;

forming a sacrificial layer on the first electrode;

forming a support layer on the sacrificial layer; and

wherein processing the second crystalline quality portion of the piezoelectric thin film comprises forming an opening in the second crystalline quality portion exposed by removal of the 500 Angstroms of the piezoelectric thin film to expose the first electrode.

5. The method of claim 3 further comprising:

forming a first electrode on the second crystalline quality portion of the piezoelectric thin film;

forming a support layer on the first electrode to have a recess therein providing access to the first electrode;

coupling a bond substrate to the support layer to form a cavity between the first electrode and the bond substrate; and

wherein processing the second crystalline quality portion of the piezoelectric thin film comprises forming an opening in the second crystalline quality piezoelectric thin film exposed by removal of the 500 Angstroms of the piezoelectric thin film to expose the first electrode.

6. The method of claim 3 further comprising:

forming a first electrode on the second crystalline quality portion of the piezoelectric thin film;

forming a multilayer mirror or reflector structure on the first electrode;

forming a support layer on the multilayer mirror or reflector structure;

coupling a bond substrate to the support layer; and

wherein processing the second crystalline quality portion of the piezoelectric thin film comprises forming an opening in the second crystalline quality piezoelectric thin film exposed by removal of the 500 Angstroms of the piezoelectric thin film to expose the first electrode.

7. The method of claim 1 wherein sputtering the one or more Group III elements from the target onto the first surface of the substrate comprises heating the substrate to a temperature in a range between 400 degrees Centigrade to 600 degrees Centigrade.

8. The method of claim 1 wherein sputtering the one or more Group III elements from the target onto the first surface of the substrate comprises sputtering a seed layer directly including the one or more Group III elements onto the first surface of the substrate to form a nucleation layer prior to formation of the piezoelectric thin film.

9. The method of claim 8 further comprising:

sputtering the one or more Group III elements onto the nucleation layer to form the piezoelectric thin film.

10. The method of claim 1 wherein the second crystalline quality portion of the piezoelectric thin film has a crystallinity in a range between 1.0 degree at FWHM to 0.5 degrees at FWHM measured using XRD.

11. A method of forming a piezoelectric thin film, the method comprising:

providing an inert gas and a nitrogen process gas to a process chamber including a substrate and a target comprising one or more Group III elements;

sputtering one or more Group III elements from the target onto a first surface of the substrate to provide the piezoelectric thin film including a nitride of the one or more Group III elements on the first surface of the substrate, wherein sputtering the one or more Group III elements from the target onto the first surface of the substrate comprises heating the substrate to a temperature in a range between 350 degrees Centigrade to 850 degrees Centigrade;

forming a first electrode on the piezoelectric thin film;

forming a multilayer mirror or reflector structure on the first electrode;

forming a support layer on the multilayer mirror or reflector structure;

coupling a bond substrate to the support layer;

processing a second surface of the substrate that is opposite the first surface of the substrate to provide an exposed surface of the piezoelectric thin film from beneath the second surface of the substrate, wherein the exposed surface of the piezoelectric thin film comprises a first crystalline quality portion of the piezoelectric thin film;

removing a portion of the exposed surface of the piezoelectric thin film to access a second crystalline quality portion of the piezoelectric thin film that is covered by the first crystalline quality portion of the piezoelectric thin film, wherein the second crystalline quality portion of the piezoelectric thin film has a higher quality than the first crystalline quality portion of the piezoelectric thin film, wherein the second crystalline quality portion of the piezoelectric thin film has a crystallinity of less than 1.0 degree at Full Width Half Maximum (FWHM) to 10 arcseconds at FWHM measured using X-ray diffraction (XRD); and

processing the second crystalline quality portion of the piezoelectric thin film to provide an acoustic resonator device on the second crystalline quality portion of the piezoelectric thin film.

12. The method of claim 11 the piezoelectric thin film comprises AlN, AlScN, AlCrN, HfMgAlN, or ZrMgAlN.

13. The method of claim 11 wherein processing the second crystalline quality portion of the piezoelectric thin film comprises forming an opening in the second crystalline quality piezoelectric thin film exposed by removal of 500 Angstroms of the piezoelectric thin film to expose the first electrode.