Method of manufacturing an integrated component with improved spatial occupation, and integrated component

1. A method of manufacturing an integrated component, comprising:

providing a first wafer of semiconductor material, said first wafer having a surface;

providing a second wafer of semiconductor material, said second wafer including a substrate and a structural layer on the substrate, the structural layer integrating a detector device configured to detect electromagnetic radiation;

coupling the structural layer of the second wafer to the surface of the first wafer; and

processing the substrate of the second wafer to form a stator, a rotor, and a mobile mass of a micromirror, said stator and rotor forming a capacitive-driving assembly for capacitively driving the mobile mass.

2. The method according to claim 1 , further comprising coupling a first cap to the substrate of the second wafer in correspondence of the detector device, and

wherein coupling the structural layer and coupling the first cap are carried out so as to form a first air-tight chamber that houses said detector device.

3. The method according to claim 2 , further comprising coupling a second cap to the substrate of the second wafer at the micromirror, and

wherein coupling the structural layer and coupling the second cap are carried out so as to form a second air-tight chamber that houses said micromirror.

4. The method according to claim 2 , further comprising:

forming a stator contact that is electrically coupled to the stator of the micromirror; and

forming a rotor contact that is electrically coupled to the rotor of the micromirror,

wherein coupling the first cap includes coupling a third wafer to the substrate of the second wafer, and shaping the third wafer so as to form: said first cap, a first through opening at the rotor contact, and a second through opening at the stator contact.

5. The method according to claim 4 , further comprising coupling a second cap to the substrate of the second wafer at the micromirror, and

wherein coupling the structural layer and coupling the second cap are carried out so as to form a second air-tight chamber that houses said micromirror.

6. The method according to claim 5 , wherein coupling the second cap includes shaping the third wafer so as to form: said first cap, said second cap, the first through opening, and the second through opening.

7. The method according to claim 5 , wherein the first cap and the second cap are jointly formed by machining of one and the same wafer of glass.

8. The method according to claim 1 , wherein coupling the structural layer of the second wafer to the surface of the first wafer includes:

forming a first coupling ring on the structural layer to surround the detector device, the first coupling ring made of a first material;

forming a second coupling ring on the surface of the first wafer, the second coupling ring made of a second material;

placing the first and the second coupling rings in mutual contact; and

carrying out a thermal treatment to form a eutectic bond between the first and the second materials.

9. The method according to claim 1 , further comprising:

coupling a first cap to the substrate of the second wafer in correspondence of the detector device;

wherein coupling the structural layer and coupling the first cap are carried out so as to form a first air-tight chamber that houses said detector device;

forming a recess in the first cap, said recess extending out onto the air-tight chamber; and

installing a getter material in the recess.

10. The method according to claim 1 , further comprising:

forming in the first wafer, starting from the surface, a first trench and a second trench; and

processing at least the first trench to reduce a reflectivity thereof,

wherein coupling the structural layer of the second wafer to the surface of the first wafer includes arranging the second trench facing the detector device; and

wherein processing the substrate of the second wafer includes forming the stator, the rotor, and the mobile mass so that they face the first trench.

11. A method of manufacturing an integrated component, comprising:

providing a first wafer of semiconductor material, said first wafer having a surface;

providing a second wafer of semiconductor material, said second wafer including a substrate and a structural layer on the substrate, the structural layer integrating an electrical circuit comprising an electromagnetic radiation detection circuit;

coupling the structural layer of the second wafer to the surface of the first wafer; and

processing the substrate of the second wafer to form a microelectromechanical system (MEMS) device comprising a stator, a rotor, and a mobile mass of a micromirror, said stator and rotor forming a capacitive-driving assembly for capacitively driving the mobile mass.

12. The method according to claim 11 , further comprising coupling a first cap to the substrate of the second wafer to form a first air-tight chamber that houses said electrical circuit.

13. The method according to claim 12 , further comprising coupling a second cap to the substrate of the second wafer at the micromirror to form a second air-tight chamber that houses said MEMS device.

14. The method according to claim 12 , wherein coupling the first cap comprises:

coupling a third wafer to the substrate of the second wafer; and

shaping the third wafer so as to form said first cap.

15. The method according to claim 14 , further comprising coupling a second cap to the substrate of the second wafer at the micromirror to form a second air-tight chamber that houses said MEMS device.

16. The method according to claim 15 , wherein coupling the second cap comprises: shaping the third wafer so as to additionally form said second cap.

17. The method according to claim 11 , wherein coupling the structural layer of the second wafer to the surface of the first wafer comprises:

forming a first coupling ring on the structural layer, the first coupling structure made of a first material;

forming a second coupling ring on the surface of the first wafer, the second coupling structure made of a second material;

placing the first and the second coupling structures in mutual contact; and

carrying out a thermal treatment to form a eutectic bond between the first and the second materials.

18. The method according to claim 11 , further comprising:

coupling a first cap to the substrate of the second wafer in correspondence of the electrical circuit;

wherein coupling the structural layer and coupling the first cap are carried out so as to form a first air-tight chamber that houses said electrical circuit;

forming a recess in the first cap, said recess extending out onto the air-tight chamber; and

installing a getter material in the recess.