Semiconductor laser device
View Patent ↗In a semiconductor laser device, a semiconductor layer includes a first groove formed on both sides of a ridge, a pair of second recesses facing each other and between which the ridge is interposed on a side of a light emitting surface, and a pair of third grooves in parallel to the first groove from the light emitting surface and interposing the ridge therebetween.
1. A semiconductor laser device in which a semiconductor layer, a dielectric film, and an electrode layer are stacked in this order,
wherein the semiconductor layer is formed by stacking an n-type clad layer and a p-type clad layer in this order, and includes
a ridge formed on the p-type clad layer and extending from one end to an other end in a direction laterally traversing the semiconductor layer, when viewed in a plan view,
two first recesses, each of which is formed on both sides of the ridge along the laterally traversing direction,
two groove-shaped second recesses having a depth reaching the n-type clad layer from the p-type clad layer and extending from each end in a direction longitudinally traversing the semiconductor layer to positions where the ridge is interposed between the two groove-shaped second recesses, when viewed in a plan view, and
two groove-shaped third recesses having a depth reaching the n-type clad layer from the p-type clad layer, extending from the one end in the direction laterally traversing the semiconductor layer toward the second recesses in the laterally traversing direction when viewed in a plan view, and disposed at positions where the ridge is interposed between the two groove-shaped third recesses in the longitudinally traversing direction,
the dielectric film covers at least a surface of the semiconductor layer other than the ridge, and
the electrode layer overlaps the ridge and overlaps the dielectric film on an other end side from the second recesses in the laterally traversing direction when viewed in a plan view.
2. The semiconductor laser device according to claim 1 ,
wherein the first recesses are groove-shaped recesses, each of which is formed on both sides of the ridge along the laterally traversing direction.
3. The semiconductor laser device according to claim 1 ,
wherein one end surface in the laterally traversing direction is a light emitting surface and an other end surface is a reflective surface.
4. The semiconductor laser device according to claim 1 ,
wherein the electrode layer includes a first electrode layer overlapping the ridge, and a second electrode layer overlapping the dielectric film and the first electrode layer on the other end side from the second recesses in the laterally traversing direction when viewed in a plan view.
5. The semiconductor laser device according to claim 1 ,
wherein the second recesses are disposed at positions symmetric with respect to the ridge in the longitudinally traversing direction.
6. The semiconductor laser device according to claim 1 ,
wherein the third recesses are connected to the second recesses on other ends in the laterally traversing direction.
7. The semiconductor laser device according to claim 1 ,
wherein the dielectric film further covers at least side surface portions of the second recesses in the longitudinally traversing direction.