Correlated electron material (CEM) device

1. A correlated electron material device comprising a conductive substrate and a layer of a correlated electron material wherein the correlated electron material layer to be disposed over the conductive substrate and wherein:

the layer of correlated electron material to comprise a metal rich transition or other metal compound;

at least a proportion of anion vacancies within the metal rich transition or other metal compound to be occupied by an electron back-donating extrinsic ligand for the metal rich transition or other metal cation; and

at least a proportion of the electron back-donating extrinsic ligand to occupy the anion vacancies to be engaged by electron back-donation from the metal cation to the electron back-donating extrinsic ligand,

wherein the proportion of the electron back-donating extrinsic ligand to occupy the anion vacancies and to be engaged by electron back-donation to correspond to at least 50% of an atom concentration of the electron back-donating extrinsic ligand present in the layer of correlated electron material.

2. The correlated electron material device according to claim 1 , wherein the metal rich transition or other metal compound to be based on a non-stoichiometric metal oxide having a formula M x O 1-x or M 1+x O 2 wherein M comprises an alkaline earth metal, a lanthanide, a transition metal or a post-transition metal, or a combination thereof.

3. The correlated electron material device according to claim 1 , wherein the metal rich transition or other metal compound to be based on a non-stoichiometric metal chalcogenide having general formula M x E 1−x or M 1+x E 2 , and wherein M comprises an alkaline earth metal, a lanthanide, a transition metal or a post-transition metal, or a combination thereof, and E comprises sulphur (S), selenium (Se), tellurium (Te) or polonium (Po), or a combination thereof.

4. The correlated electron material device according to claim 1 , wherein the metal rich transition or other metal compound to comprise nickel (II) oxide (NiO), hafnium (IV) oxide (HfO 2 ) or bismuth (III) telluride (Bi 2 Te 3 ), or a combination thereof.

5. The correlated electron material device according to claim 1 , wherein the correlated electron material layer to have an area size less than 90 nm 2 .

6. The correlated electron material device according to claim 1 , wherein the correlated electron material layer to have an area size less than 50 nm 2 .

7. The correlated electron material device according to claim 1 , wherein the correlated electron material layer to have an area size less than 30 nm 2 .

8. The correlated electron material device according to claim 1 , wherein the metal rich transition or other metal compound to comprise intrinsically a “p-type” metal rich transition or other metal compound.

9. The device according to claim 1 , wherein an atom concentration of electron back-donating extrinsic ligand in the correlated electron material to be between about 0.1% and 15.0%.

10. The correlated electron material device according to claim 1 , wherein the conductive substrate and/or a conductive overlay to comprise titanium nitride, tantalum nitride, platinum, titanium, copper, aluminum, cobalt, nickel, tungsten, cobalt silicide, ruthenium, ruthenium oxide, chromium, gold, palladium, indium tin oxide, tantalum, silver, iridium or iridium oxide, or a combination thereof.

11. The correlated electron material device according to claim 1 , wherein a thickness of the conductive substrate and/or a conductive overlay to be between 50 nm and 500 nm.

12. The correlated electron material device according to claim 1 , wherein the thickness of the correlated electron material layers to be between 1.5 nm and 100.0 nm.

13. The correlated electron material device according to claim 1 , wherein the correlated electron material device to exhibit switching to a relatively high impedance state at voltages below about 1.5 V or 1.0 V.

14. The correlated electron material device according to claim 1 , wherein a set proportion of the electron back-donating extrinsic ligands occupying the anion vacancies to be engaged by electron back-donation from the metal cation to the electron back-donating extrinsic ligand.

15. The correlated electron material device according to claim 1 , wherein the electron back-donating extrinsic ligand to comprise carbonyl (CO), nitrosyl (NO), an isocyanide (RNC where R is H, C 1 -C 6 alkyl or C 6 -C 10 -aryl), an alkene (e.g. ethene), an alkyne (e.g. ethyne) or a phosphine, or a combination thereof.

16. The correlated electron material device according to claim 15 , wherein the phosphine to comprise a trialkyl phosphine, a triaryl phosphine (R 3 P wherein R is H, C 1 -C 6 -alkyl or C 6 -C 10 -aryl) or a triethyl phosphine (PEt 3 ), or a combination thereof.

17. A correlated electron material device comprising a conductive substrate and a layer of a correlated electron material wherein the correlated electron material layer to be disposed over the conductive substrate and wherein:

the layer of correlated electron material to comprise a metal rich transition or other metal compound;

at least a proportion of anion vacancies within the metal rich transition or other metal compound to be occupied by an electron back-donating extrinsic ligand for the metal rich transition or other metal cation; and

at least a proportion of the electron back-donating extrinsic ligand to occupy the anion vacancies to be engaged by electron back-donation from the metal cation to the electron back-donating extrinsic ligand,

wherein the proportion of the electron back-donating extrinsic ligand to occupy the anion vacancies to correspond to a prescribed area for a peak in a Fourier Transform Infra-Red (FT-IR) spectrum or X-ray photoelectron (XPS) spectrum of the correlated electron material.