Light-emitting device and manufacturing method thereof
A light-emitting device, includes a substrate, including an upper surface; a first light emitting unit and a second light emitting unit, formed on the upper surface, wherein each of the first light emitting unit and the second light emitting unit includes a lower semiconductor portion and an upper semiconductor portion; and a conductive structure electrically connecting the first light emitting unit and the second light emitting unit; wherein the lower semiconductor portion of the first light emitting unit includes a first sidewall and a first upper surface; and wherein the first side wall includes a first sub-side wall and a second sub-side wall, an obtuse angle is formed between the first sub-side wall and the first upper surface and another obtuse angle is formed between the second sub-side wall and the upper surface.
1. A light-emitting device, comprising:
a substrate, comprising an upper surface;
a first light-emitting unit and a second light-emitting unit, formed on the upper surface, wherein each of the first light-emitting unit and the second light-emitting unit comprises a lower semiconductor portion and an upper semiconductor portion; and
a conductive structure electrically connecting the first light-emitting unit and the second light-emitting unit;
wherein the lower semiconductor portion of the first light-emitting unit comprises a first side wall and a first upper surface; and
wherein the first side wall comprises a first sub-side wall and a second sub-side wall, an obtuse angle is formed between the first sub-side wall and the first upper surface and another obtuse angle is formed between the second sub-side wall and the upper surface.
2. The light-emitting device according to claim 1 , wherein the first sub-side wall and the second sub-side wall are connected.
3. The light-emitting device according to claim 1 , wherein the lower semiconductor portion of the first light-emitting unit further comprises a second side wall facing the second light-emitting unit, and the conductive structure is formed on the second side wall and the second light-emitting unit; and wherein an acute angle is formed between the second side wall and the upper surface.
4. The light-emitting device according to claim 3 , wherein:
the first light-emitting unit and the second light-emitting unit are adjacent;
the first side wall faces the second light-emitting unit;
each of the first side wall and the second side wall comprises a lower edge; and
the lower edge of the second side wall is closer to the second light-emitting unit than the lower edge of the first side wall.
5. The light-emitting device according to claim 3 , wherein:
the first light-emitting unit and the second light-emitting unit are adjacent;
the first side wall faces the second light-emitting unit;
each of the first side wall and the second side wall comprises an upper edge; and
the upper edge of the second side wall is closer to the second light-emitting unit than the upper edge of the first side wall.
6. The light-emitting device according to claim 3 , wherein:
the first light-emitting unit and the second light-emitting unit are adjacent;
the first side wall faces the second light-emitting unit;
each of the first side wall and the second side wall comprises an upper edge; and
the upper edge of the first side wall and the upper edge of the second side wall are aligned.
7. The light-emitting device according to claim 3 , wherein the lower semiconductor portion of the first light-emitting unit further comprises a clamped surface between the first side wall and the second side wall, and the clamped surface substantially has a triangular shape with an edge connecting the upper surface.
8. The light-emitting device according to claim 3 , further comprising an insulator under the conductive structure.
9. The light-emitting device according to claim 8 , wherein the substrate comprises a plurality of patterned structures on the upper surface; and the patterned structures under the insulator and the patterned structures not under the insulator have different sizes and/or different shapes.
10. The light-emitting device according to claim 8 , wherein the insulator comprises middle portion on the second side wall and an extending portion on the upper semiconductor portion of the first light-emitting unit, and a width of the middle portion is greater than that of the extending portion.
11. The light-emitting device according to claim 3 , wherein in a top view, a length of the second side wall extending on an edge of the first light-emitting unit is equal to a length of the edge.
12. The light-emitting device according to claim 3 , wherein the conductive structure comprises a connection electrode on the second side wall and an extending electrode on the upper semiconductor portion of the first light-emitting unit.
13. The light-emitting device according to claim 1 , wherein the second sub-side wall is between the first sub-side wall and the substrate, and the second sub-side wall comprises a rugged surface with concaves and convexes.
14. The light-emitting device according to claim 13 , wherein the first sub-side wall is even.
15. A light-emitting device, comprising:
a substrate, comprising an upper surface;
a first light-emitting unit and a second light-emitting unit, formed on the upper surface, wherein each of the first light-emitting unit and the second light-emitting unit comprises a lower semiconductor portion and an upper semiconductor portion; and
a conductive structure, electrically connecting the first light-emitting unit and the second light-emitting unit;
wherein the lower semiconductor portion of the first light-emitting unit comprises a first side wall, adjacent to a periphery of the light-emitting device;
wherein an included angle between the first side wall and the upper surface is an obtuse angle; and
wherein in a side view, the first side wall has a parallelogram-like shape or a parallelogram shape with a pair of diagonal angles having a first acute angle and a second acute angle.
16. The light-emitting device of claim 15 , wherein the lower semiconductor portion of the first light-emitting unit further comprises a second side wall facing the second light-emitting unit; and an included angle between the second side wall and the upper surface is an acute angle.
17. The light-emitting device of claim 16 , wherein the conductive structure is formed on the second side wall.
18. The light-emitting device of claim 15 , wherein a difference between the first acute angle and the second acute angle is smaller than 40 degrees.
19. The light-emitting device of claim 15 , wherein the lower semiconductor portion of the second light-emitting unit comprises a third side wall adjacent to the periphery of the light-emitting device; wherein an obtuse angle is between the third side wall and the upper surface; and in a side view, the third side wall is a trapezoid.
20. The light-emitting device of claim 15 , wherein the first side wall comprises a first sub-side wall and a second sub-side wall connected to the first sub-side wall.