IP Library Granted Patent US 11,549,058
Granted Patent B2
US 11,549,058 · App. 16/751,632 · Granted Jan 10, 2023

Small molecule passivation of quantum dots for increased quantum yield

Inventors: Ilan Jen-La Plante (San Jose, CA); Yeewah Annie Chow (San Jose, CA); John J. Curley (San Francisco, CA); Wenzhou Guo (San Jose, CA); Alexander Tu (San Jose, CA); Chunming Wang (Milpitas, CA)
Assignee: Nanosys, Inc.
C09K11/70C09K11/025H01L33/0083H01L33/06B82Y20/00B82Y40/00
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Quick Facts
Patent No.
US 11,549,058
App. No.
16/751,632
Granted
Jan 10, 2023
Kind
B2
Abstract

This disclosure pertains to the field of nanotechnology. The disclosure provides nanostructure compositions comprising (a) at least one population of nanostructures; (b) at least one metal halide bound to the surface of the nanostructures; and (c) at least one metal carboxylate bound to the surface of the nanostructures. The nanostructure compositions have high quantum yield, narrow emission peak width, tunable emission wavelength, and colloidal stability. Also provided are methods of preparing the nanostructure compositions. And, nanostructure films and molded articles comprising the nanostructure compositions are also provided.

Claims (26)

1. A nanostructure composition comprising:

(a) at least one population of nanostructures, the nanostructures comprising a nanocrystal core and at least one shell;

(b) at least one metal halide bound to the surface of the nanostructures; and

(c) at least one metal carboxylate bound to the surface of the nanostructures.

2. The nanostructure composition of claim 1 , wherein the nanocrystal core is selected from the group consisting of Si, Ge, Sn, Se, Te, B, C, P, BN, BP, BAs, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb, ZnO, ZnS, ZnSe, ZnTe, CdS, CdSe, CdSeZn, CdTe, HgS, HgSe, HgTe, BeS, BeSe, BeTe, MgS, MgSe, GeS, GeSe, GeTe, SnS, SnSe, SnTe, PbO, PbS, PbSe, PbTe, CuF, CuCl, CuBr, CuI, Si 3 N 4 , Ge 3 N 4 , Al 2 O 3 , Al 2 CO, and combinations thereof.

3. The nanostructure composition of claim 1 , wherein the nanocrystal core comprises InP.

4. The nanostructure composition of claim 1 , wherein the nanostructures comprise two shells.

5. The nanostructure composition of claim 1 , wherein at least one shell is selected from the group consisting of CdS, CdSe, CdO, CdTe, ZnS, ZnO, ZnSe, ZnTe, MgTe, GaAs, GaSb, GaN, HgO, HgS, HgSe, HgTe, InAs, InSb, InN, AlAs, AN, AlSb, AlS, PbS, PbO, PbSe, PbTe, MgO, MgS, MgSe, MgTe, CuCl, Ge, Si, and alloys thereof.

6. The nanostructure composition of claim 1 , wherein at least one shell comprises ZnSe and at least one shell comprises ZnS.

7. The nanostructure composition of claim 1 , wherein at least one metal halide is selected from the group consisting of LiF, NaF, KF, BeF 2 , MgF 2 , CaF 2 , SrF 2 , CuF, AgF, AuF, ZnF 2 , HgF 2 , A 1 F 3 , GaF 3 , InF 3 , SnF 2 , PbF 2 , LiCl, NaCl, KCl, BeCl 2 , MgCl 2 , CaCl 2 ), SrCl 2 , CuCl, AgCl, ZnCl 2 , HgCl 2 , AlCl 3 , GaCl 3 , InCl 3 , SnCl 2 , PBCl 2 , LiBr, NaBr, KBr, BeBr 2 , MgBr 2 , CaBr 2 , SrBr 2 , CuBr, AgBr, AuBr, ZnBr 2 , HgBr 2 , AlBr 3 , GaBr 3 , InBr 3 , SnBr 2 , PbBr 2 , LiI, NaI, KI, BeI 2 , MgI 2 , CaI 2 , SrI 2 , CuI, AgI, AuI, ZnI 2 , HgI 2 , AlI 3 , GaI 3 , InI 3 , SnI 2 , and PbI 2 .

8. The nanostructure composition of claim 1 , wherein at least one metal halide is selected from the group consisting of ZnF 2 , ZnCl 2 , ZnBr 2 , and ZnI 2 .

9. The nanostructure composition of claim 1 , wherein at least one metal carboxylate is selected from the group consisting of zinc oleate, zinc hexanoate, zinc laurate, zinc myristate, zinc palmitate, zinc stearate, and zinc PEG-carboxylate.

10. The nanostructure composition of claim 1 , wherein the nanostructure composition can be stably stored at a temperature between about 30° C. and about 90° C. between about 3 months and 3 years.

11. The nanostructure composition of claim 1 , wherein the nanostructure composition exhibits a full width at half maximum of between about 30 nm and about 45 nm.

12. The nanostructure composition of claim 1 , wherein the nanostructures comprise a nanocrystal core comprising InP, at least one shell comprising ZnSe, at least one shell comprising ZnS, and at least one metal halide comprising ZnCl 2 .

13. The nanostructure composition of claim 1 , wherein the nanostructures are quantum dots.

14. A method of preparing the nanostructure composition of claim 1 , the method comprising:

(a) providing at least one population of nanostructures, wherein the nanostructures comprise a nanocrystal core and at least one shell;

(b) admixing at least one metal carboxylate with the nanostructures of (a);

(c) admixing at least one metal halide with the nanostructures of (b);

to produce a nanostructure composition.

15. A nanostructure film comprising the nanostructure composition of claim 1 .

16. The nanostructure film of claim 15 , further comprising an organic resin.

17. The nanostructure film of claim 15 , wherein the at least one organic resin is a thermosetting resin or a UV curable resin.

18. A molded article comprising the nanostructure film of claim 15 .

19. The molded article of claim 18 , wherein the molded article is a light emitting diode or a liquid crystal display.

Assignments (5)
CORRECTIVE ASSIGNMENT TO CORRECT THE ADDRESS OF THE ASSIGNEE TO BE: 2-1-1, NISHI-SHINJUKU SHINJUKU-KU TOKYO, JAPAN 163-0043 PREVIOUSLY RECORDED AT REEL: 065114 FRAME: 0769. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Recorded Oct 9, 2023
From: NANOSYS, INC.
To: SHOEI CHEMICAL INC.
Reel/Frame 065271/0540 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 3, 2023
From: NANOSYS, INC.
To: SHOEI CHEMICAL INC.
Reel/Frame 065114/0769 →
TERMINATION AND RELEASE OF PATENT SECURITY AGREEMENT RECORDED AT REEL 059569 / FRAME 0840 Recorded Sep 7, 2023
From: FORTRESS CREDIT CORP.,
To: NANOSYS, INC.
Reel/Frame 064836/0263 →
SECURITY INTEREST Recorded Apr 1, 2022
From: NANOSYS, INC.
To: FORTRESS CREDIT CORP., AS AGENT
Reel/Frame 059569/0840 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 10, 2020
From: JEN-LA PLANTE, ILAN; CHOW, YEEWAH ANNIE; CURLEY, JOHN J.; GUO, WENZHOU; TU, ALEXANDER; WANG, CHUNMING
To: NANOSYS, INC.
Reel/Frame 052364/0867 →