Phosphor mixture, conversion element and optoelectronic component

1. An optoelectronic component comprising:

a radiation-emitting semiconductor chip configured to emit electromagnetic radiation within an excitation spectrum; wherein the excitation spectrum has a peak wavelength ranging from 435 nm to 460 nm inclusive; and

a phosphor mixture comprising:

a first phosphor having an emission spectrum with an FWHM width ranging from 70 nanometers to 150 nanometers inclusive; and wherein the first phosphor is configured to emit electromagnetic radiation in the green spectral range;

a second phosphor having an emission spectrum with an FWHM width ranging from 1 nanometer to 40 nanometers inclusive; and wherein the second phosphor is configured to emit electromagnetic radiation in the red spectral range; and

a third phosphor having an emission spectrum with an FWHM width ranging from 25 nanometers to 100 nanometers inclusive; and wherein the third phosphor is configured to emit electromagnetic radiation in the orange-red spectral range; wherein the emission spectrum of the third phosphor has a peak wavelength which has a spectral separation with respect to the peak wavelength of the emission spectrum of the second phosphor ranging from 5 nm to 30 nm.

2. The optoelectronic component as claimed in claim 1 , further comprising a fourth phosphor having an emission spectrum with an FWHM width ranging from 1 nanometer to 60 nanometers inclusive; and wherein the further phosphor is configured to emit electromagnetic radiation in the cyan-colored spectral range.

3. The optoelectronic component as claimed in claim 2 , wherein the fourth phosphor has an emission spectrum having a peak wavelength ranging from 470 nanometers to 520 nanometers inclusive.

4. The optoelectronic component as claimed in claim 2 , wherein the fourth phosphor is a quantum dot phosphor.

5. The optoelectronic component as claimed in claim 1 , wherein the FWHM width of the emission spectrum of the third phosphor ranges from about 70 nanometers to about 90 nanometers inclusive.

6. The optoelectronic component as claimed in claim 1 , wherein the FWHM width of the emission spectrum of the third phosphor ranges from about 25 nanometers to about 45 nanometers inclusive.

7. The optoelectronic component as claimed in claim 1 , wherein the emission spectrum of the third phosphor has a peak wavelength having a spectral separation with respect to the peak wavelength of the emission spectrum of the second ranging from about 5 nanometers to about 30 nanometers inclusive.

8. The optoelectronic component as claimed in claim 1 , wherein the emission spectrum of the third phosphor has a peak wavelength ranging from about 580 nanometers to about 620 nanometers inclusive.

9. The optoelectronic component as claimed in claim 1 , wherein the first has an emission spectrum having a peak wavelength ranging from about 500 nanometers to about 560 nanometers inclusive.

10. The optoelectronic component as claimed in claim 1 , wherein the first has an emission spectrum having a peak wavelength ranging from about 500 nanometers to about 530 nanometers inclusive.

11. The optoelectronic component as claimed in claim 1 , wherein the emission spectrum of the second has a peak wavelength ranging from about 610 nanometers to about 635 nanometers inclusive.

12. The optoelectronic component as claimed in claim 1 , wherein the third phosphor is a quantum dot phosphor; and wherein the first is an activator-based phosphor.

13. The optoelectronic component as claimed in claim 1 , wherein each of the first phosphor and the third phosphor is an activator-based phosphor.

14. The optoelectronic component as claimed in claim 1 ,

which emits mixed-colored, warm-white light.

15. The optoelectronic component as claimed in claim 1 , wherein the third phosphor has an emission spectrum having a greater FWHM width as compared to the second phosphor.

16. The optoelectronic component as claimed in claim 1 , wherein the second phosphor comprises a cadmium-based material.

17. The optoelectronic component as claimed in claim 16 , wherein the cadmium-based material is selected from the group consisting of CdSe, CdS, CdTe, and combinations thereof.

18. The optoelectronic component as claimed in claim 1 , wherein the second phosphor is a quantum dot phosphor comprising a material selected from the group consisting of a cadmium-based material, InP, InAs, Cl(Z)S, AlS, Za 3 N 2 , Si, ZnSe, ZnO, GaN, and combinations thereof.