Method for producing an optoelectronic component, and optoelectronic component
A method for producing an optoelectronic component by providing a semiconductor layer sequence on a substrate where the semiconductor layer sequence is configured to emit radiation. The method may further include applying a contact layer to the semiconductor layer sequence where the contact layer has a layer thickness of at most 10 nm. The method may further include applying a reflective layer to the contact layer and applying a barrier layer directly to the reflective layer.
1. A method for producing an optoelectronic component; wherein the method comprises:
providing a semiconductor layer sequence on a carrier, the semiconductor layer sequence configured for radiation emission, the semiconductor layer sequence comprising at least one n-doped semiconductor layer, at least one p-doped semiconductor layer, and an active layer arranged between the n-and p-doped semiconductor layers;
applying a contact layer directly onto the semiconductor layer sequence, the contact layer having a layer thickness of at most 10 nm, wherein the contact layer reduces diffusion of the material of a mirror layer to the semiconductor layer sequence;
structuring the contact layer by etching, a photoresist mask, or a wet chemical liftoff;
applying the mirror layer directly onto the contact layer; and
applying a barrier layer directly onto the mirror layer;
wherein:
the contact layer comprises zinc or zinc oxide,
the mirror layer comprises silver, the contact layer being used as a growth layer for the mirror layer and therefore influencing the grain size distribution and orientation of the mirror layer;
the contact layer and the barrier layer have different material compositions; and
the barrier layer comprises a conductive metal nitride, wherein the contact layer, the mirror layer, and the barrier layer form a first mirror element; and wherein the mirror element is configured as a p-terminal contact for contacting of the p-doped semiconductor layer; and
forming a second mirror element in one or more structured regions of the n-doped semiconductor layer,
wherein the method further comprises:
forming a combo mirror element in one or more structured region of the n-doped semiconductor layer directly on the second mirror element; and
applying a surface-wide metallization contacting the n-doped semiconductor layer through the combo mirror element and the second mirror element.
2. The method as claimed in claim 1 ,
wherein the contact layer is used as a growth layer for the mirror layer.
3. The method as claimed in claim 1 ,
wherein the layer thickness of the contact layer is less than the layer thickness of the barrier layer.
4. The method as claimed in claim 1 ,
wherein the layer thickness of the contact layer is less than the layer thickness of the barrier layer at least by the factor 1/20.
5. The method as claimed in claim 1 ,
wherein the layer thickness of the contact layer ranges from 0.05 nm to 3 nm.
6. The method as claimed in claim 1 ,
wherein the contact layer comprises a transparent conductive oxide or a metal.
7. The method as claimed in claim 1 ,
wherein the contact layer comprises zinc oxide.
8. The method as claimed in claim 1 ,
wherein the contact layer comprises zinc.
9. The method as claimed in claim 1 ,
wherein the contact layer is configured as a surface-wide monolayer.
10. The method as claimed in claim 1 ,
wherein the contact layer is applied directly onto the p-doped semiconductor layer, the contact layer being directly followed by the mirror layer; and further comprising structuring the mirror layer in the same manner as the contact layer.
11. The method as claimed in claim 1 ,
wherein the mirror layer comprises a reflective metal.
12. The method as claimed in claim 1 ,
wherein the semiconductor layer sequence comprises indium gallium nitride or gallium nitride.
13. The method as claimed in claim 1 ,
wherein applying the contact layer occurs by sputtering.