SENSOR ELEMENT AND METHOD FOR MANUFACTURING SAME, AND SENSOR DEVICE

1 . A sensor element including a base material and a semiconductor chip bonded to the base material,

wherein the semiconductor chip includes a semiconductor substrate, a support film provided on a surface of the semiconductor substrate, a substrate chamber provided in a concave shape on the semiconductor substrate to form a cavity facing an element region of the support film, and an insulating layer provided in a rear surface of the semiconductor substrate, and a bonding layer provided between the insulating layer and the base material,

wherein the insulating layer includes at least one of a silicon oxynitride film and a silicon oxide film, and

wherein the bonding layer includes a low-melting point glass.

2 . The sensor element according to claim 1 ,

wherein the semiconductor chip includes a plurality of the substrate chambers, and

wherein at least one of the substrate chambers is sealed between the semiconductor substrate and the base material and is in a depressurized state lower than the atmospheric pressure.

3 . The sensor element according to claim 1 ,

wherein the low-melting point glass contains vanadium.

4 . The sensor element according to claim 1 ,

wherein the support film has a film made of an oxide or a nitride on a surface opposite to the substrate chamber.

5 . The sensor element according to claim 1 ,

wherein the base material is silicon or glass.

6 . The sensor element according to claim 1 ,

wherein the insulating layer includes a silicon nitride film.

7 . The sensor element according to claim 6 ,

wherein the insulating layer has at least one of the silicon oxynitride film and the silicon oxide film between the silicon nitride film and the bonding layer.

8 . The sensor element according to claim 1 ,

wherein the insulating layer is formed only of the silicon oxide film.

9 . The sensor element according to claim 1 ,

wherein the insulating layer has the silicon oxynitride film, and

wherein the silicon oxynitride film has a thickness of 100 nm or less.

10 . The sensor element according to claim 1 ,

wherein the semiconductor chip has a thickness of 10 μm or less.

11 . The sensor element according to claim 1 ,

wherein the low-melting point glass has a linear expansion coefficient of 30×10 −7 [1/° C.] or more and 70×10 −7 [1/° C.] or less.

12 . The sensor element according to claim 1 ,

wherein at least one of a pressure measurement element and a humidity measurement element is formed in the element region of the support film.

13 . A sensor device, comprising:

the sensor element according to claim 1 .

14 . A method for manufacturing a sensor element including a base material and a semiconductor chip bonded to the base material, comprising:

an arrangement step for arranging a semiconductor chip on a surface of the base material via a bonding agent containing a low-melting point glass in with the insulating layer facing the surface of the base material, wherein the semiconductor chip includes a semiconductor substrate, a support film provided on a surface of the semiconductor substrate, a substrate chamber provided in a concave shape in the semiconductor substrate to form a cavity facing an element region of the support film, and an insulating layer including at least one of a silicon oxynitride film and a silicon oxide film provided on a rear surface of the semiconductor substrate; and

a bonding step for heating the bonding agent to a heating temperature not lower than a softening point of the low-melting point glass and not higher than a heat-resistant temperature of the semiconductor chip, and bonding the semiconductor chip to the base material via the bonding layer.

15 . The method for manufacturing a sensor element according to claim 14 , wherein, in the bonding step, the heating temperature is 400° C. or less.