Power reception device and contactless power transmission system
A power reception device includes: a power reception coil that receives power by magnetic resonance; a power reception circuit that converts power received by the power reception coil into direct current; a load circuit that operates by the power into which the power is converted by the power reception circuit; a first substrate on which the power reception coil and the power reception circuit are mounted; and a second substrate on which the load circuit is mounted, the second substrate being located outside the power reception coil as viewed in an axial direction of the power reception coil.
1. A power reception device comprising:
a power reception coil configured to receive power through magnetic resonance;
a power reception circuit configured to convert power received by the power reception coil into direct current;
a load circuit configured to operate by the direct current obtained by conversion performed by the power reception circuit;
a first substrate on which the power reception coil and the power reception circuit are mounted; and
a second substrate on which the load circuit is mounted, the second substrate being located outside a volume above or below the power reception coil with an axial direction of the power reception coil defining a vertical direction,
wherein the power reception circuit is located between at least a part of the first substrate and at least part of the second substrate in the axial direction of the power reception coil.
2. The power reception device of claim 1 , wherein the first substrate includes a first region in which the power reception coil is provided and a second region in which the power reception circuit is provided, and the first region and the second region are adjacent to each other in a direction perpendicular to the axial direction of the power reception coil.
3. The power reception device of claim 1 , further comprising a second load circuit configured to operate by the direct current obtained by the conversion performed by the power reception circuit,
wherein the second load circuit is located at least partly above or below the power reception coil and includes a component which does not form an electrically closed circuit.
4. The power reception device of claim 1 , comprising a plurality of sets of the power reception coil and the power reception circuit,
wherein the load circuit is configured to receive power from the plurality of sets of the power reception coils and the power reception circuits.
5. The power reception device of claim 1 , further comprising:
a first housing that houses the first substrate; and
a second housing that houses the second substrate,
wherein the first housing and the second housing are connected to each other such that the first housing and the second housing are movable to a first position where the load circuit is located outside the volume above or below the power reception coil and a second position where the load circuit is at least partially located in the volume above or below the power reception coil.
6. The power reception device of claim 1 , wherein a resonance frequency of the magnetic resonance is in a MHz band.
7. The power reception device of claim 6 , wherein the resonance frequency of the magnetic resonance is 6.78 MHz or an integral multiple of 6.78 MHz.
8. A contactless power transmission system comprising:
a power transmission device including a power transmission coil and an inverter circuit, the power transmission coil being configured to transmit power through magnetic resonance, the inverter circuit configured to supply power to the power transmission coil; and
the power reception device of claim 1 .
9. The contactless power transmission system of claim 8 , wherein the inverter circuit includes a semiconductor switching element, and the semiconductor switching element is formed of a wide-bandgap semiconductor.
10. The contactless power transmission system of claim 9 , wherein the wide-bandgap semiconductor is silicon carbide, a gallium-nitride-based material, diamond, or gallium nitride.