Semiconductor laser array and semiconductor laser array circuit arrangement
A semiconductor laser array may include a plurality of semiconductor lasers and a common substrate configured as a common anode of said plurality of semiconductor lasers. Each semiconductor laser may have a pn junction region between the common anode and a cathode contact layer. The pn junction region may include a p-doped layer and an n-doped layer. The p-doped layer of the pn junction region may face the substrate. The semiconductor laser array circuit arrangement may include a semiconductor laser array, each laser may be controlled by a driver with an n-MOSFET.
1. A semiconductor laser array comprising:
a plurality of semiconductor lasers;
a common substrate configured as a common anode of said plurality of semiconductor lasers;
wherein each semiconductor laser comprises a pn junction region between the common anode and a cathode contact layer, and wherein the pn junction region comprises a p-doped layer and an n-doped layer, and wherein the p-doped layer faces the substrate.
2. The semiconductor laser array according to claim 1 , wherein the pn junction region of at least one semiconductor laser of the plurality of semiconductor lasers comprises a plurality of pn junction regions,
and wherein a tunnel diode is arranged between two adjacent pn junction regions.
3. The semiconductor laser array according to claim 1 , wherein the substrate is an n-doped substrate.
4. The semiconductor laser array according to claim 3 , wherein a tunnel diode is arranged between the n-doped substrate and the adjacent pn junction region.
5. The semiconductor laser array according to claim 1 , wherein the substrate is a p-doped substrate.
6. The semiconductor laser array according to claim 1 ,
wherein the cathode contact layer is n-doped.
7. The semiconductor laser array according to claim 1 ,
wherein each semiconductor laser of the plurality of semiconductor lasers comprises a semiconductor layer stack arranged on the substrate,
wherein the semiconductor layer stack comprises:
the pn junction where the n-doped layer is arranged above the p-doped layer,
and a p-doped tunnel diode layer arranged above an n-doped tunnel diode layer,
wherein the n-doped layer faces the n-doped tunnel diode layer, the p-doped layer faces the p-doped tunnel diode layer, or combinations thereof.
8. The semiconductor laser array according to claim 7 , wherein the plurality of semiconductor lasers are separated from each other by trenches.
9. A semiconductor laser array circuit arrangement comprising a semiconductor laser array according to claim 1 , wherein each semiconductor laser of the plurality of semiconductor lasers are configured to be controlled by a driver with an n-MOSFET.
10. The semiconductor laser array circuit arrangement according to claim 9 ,
wherein the driver comprises a source circuit of the n-MOSFET; wherein the n-MOSFET comprises a drain contact and a source contact wherein the drain contact is electrically conductively connected to the cathode contact layer of one semiconductor laser of the plurality of the semiconductor lasers; wherein the source contact is electrically conductively connected to a reference potential.
11. The semiconductor laser array circuit arrangement according to claim 10 ,
wherein the common anode is connected to a supply potential.
12. A semiconductor laser array comprising:
a plurality of semiconductor lasers; and
a common substrate configured as a common anode of said plurality of semiconductor lasers;
wherein each semiconductor laser comprises a pn junction region between the common anode and a cathode contact layer, wherein the pn junction region comprises a p-doped layer and an n-doped layer, and wherein the p-doped layer of the pn junction region faces the substrate, and wherein the cathode contact layer is p-doped and a tunnel diode is arranged between the cathode contact layer and the adjacent pn junction region.