Carrier, assembly comprising a substrate and a carrier, and method for producing a carrier
Carrier with an electrically insulating base material, electrically conductive through-connections and a thermal connection element. The through-connections and the thermal connection element are each completely surrounded by the base material in the lateral direction, the thermal connection element and the through-connections completely penetrating the base material perpendicularly to the main extension plane of the carrier, and the thermal connection element being formed with a material which has a thermal conductivity of at least 200 W/(m K).
1. A method for producing a carrier comprising the steps:
A) providing an electrically conductive first auxiliary carrier;
B) arranging at least one thermal connection element on the first auxiliary carrier;
C) arranging at least one through-connection on the first auxiliary carrier;
D) applying a base material to the first auxiliary carrier, wherein the base material completely surrounds the through-connection and the thermal connection element in lateral directions;
E) applying contact structures on a side of the thermal connection element and the through-connection facing away from the first auxiliary carrier;
F) arranging a second auxiliary carrier on a side of the contact structures facing away from the first auxiliary carrier;
G) removing the first auxiliary carrier;
H) applying a metallization to a side of the thermal connection element and/or the through-connection facing away from the second auxiliary carrier; and
I) removing the second auxiliary carrier;
wherein
after step I) a substrate is arranged on a side of the metallization facing away from the base material, wherein the substrate comprises at least one conductor track and at least one heat sink;
the metallization, which is arranged in the region of the through-connection, is brought into direct contact with the conductor track; and
the metallization, which is arranged in the region of the thermal connection element, is brought into direct contact with the heat sink.
2. The method according to claim 1 , wherein in a step H1), which is carried out after step H), a third auxiliary carrier is arranged on a side of the metallization facing away from the second auxiliary carrier.
3. The method according to claim 1 , wherein the through-connection in step C) is produced by means of a photolithographic process.
4. The method according to claim 1 , wherein in a step D1), which is carried out after step D), the side of the base material, the through-connection and the thermal connection element facing away from the first auxiliary carrier is planarized.
5. The method according to claim 1 , wherein
in step E) a seed layer is applied over the entire surface of the side of the base material, the through-connection and the thermal connection element facing away from the first auxiliary carrier, and
the contact structure is electrodeposited.
6. The method according to claim 1 , wherein
a plurality of carriers is produced in steps A) to I), and
the carriers are subsequently singulated in a step J).
7. The method according to claim 1 , wherein step H) is carried out immediately after step G).