Semiconductor module, display device, and semiconductor module production method

1. A semiconductor module comprising:

a base substrate in which a drive circuit is formed;

a plurality of light emitting elements electrically connected to the drive circuit;

a plurality of color conversion layers respectively being in contact with upper portions of the plurality of light emitting elements adjacent to each other;

a light shielding layer disposed between the plurality of light emitting elements adjacent to each other and between the plurality of color conversion layers adjacent to each other, and separating the plurality of light emitting elements and the plurality of color conversion layers; and

a dummy element formed above the base substrate, wherein

the light shielding layer covers an upper surface of the base substrate, the dummy element, side surfaces of the plurality of light emitting elements, and side surfaces of the plurality of color conversion layers.

2. The semiconductor module according to claim 1 , wherein a distance between the plurality of light emitting elements is 0.1 μm or more and 20 μm or less when viewed in a top view.

3. The semiconductor module according to claim 1 , wherein a distance between the plurality of color conversion layers is 0.1 μm or more and 20 μm or less when viewed in a top view.

4. The semiconductor module according to claim 1 , further comprising:

a metal terminal provided on the base substrate and supplying electric power from outside to drive the drive circuit; and

an insulating layer provided on the base substrate and covering a part of the upper surface of the base substrate,

wherein the metal terminal penetrates the insulating layer and is in contact with a pad electrode formed on the upper surface of the base substrate, and

wherein a part of the metal terminal is in contact with an upper surface of the insulating layer.

5. The semiconductor module according to claim 4 , wherein an upper surface of the pad electrode is covered with the metal terminal and the insulating layer.

6. The semiconductor module according to claim 1 , wherein the plurality of color conversion layers include a phosphor having a median diameter of 2 μm or less.

7. The semiconductor module according to claim 1 , wherein a height of the plurality of color conversion layers from the base substrate is lower than a height of the light shielding layer from the base substrate.

8. The semiconductor module according to claim 1 , wherein the light shielding layer includes a plurality of layers.

9. The semiconductor module according to claim 8 , wherein the plurality of layers include a first light shielding layer and a second light shielding layer made of a material different from a material of the first light shielding layer.

10. The semiconductor module according to claim 9 , wherein the second light shielding layer is disposed on the first light shielding layer, and

wherein a height of a boundary between the first light shielding layer and the second light shielding layer from the base substrate is equal to a height of a boundary between the plurality of light emitting elements and the plurality of color conversion layers from the base substrate.

11. The semiconductor module according to claim 1 , further comprising:

a second dummy element formed on an upper portion of the base substrate,

wherein the second dummy element is disposed outside the plurality of light emitting elements and inside the dummy element when viewed in a top view.

12. The semiconductor module according to claim 1 , wherein the light shielding layer is formed to include white resin.

13. A semiconductor module comprising:

a base substrate in which a drive circuit is formed;

a plurality of light emitting elements electrically connected to the drive circuit;

a light shielding layer disposed between the plurality of light emitting elements adjacent to each other and separating the plurality of light emitting elements;

a metal terminal provided on the base substrate and supplying electric power from outside to drive the drive circuit; and

an insulating layer provided on the base substrate and covering a part of an upper surface of the base substrate,

wherein the metal terminal penetrates the insulating layer and is in contact with a pad electrode formed on the upper surface of the base substrate,

wherein a part of the metal terminal is in contact with an upper surface of the insulating layer, and

wherein the pad electrode is embedded in the base substrate and is provided in the drive circuit formed in the base substrate.

14. The semiconductor module according to claim 13 , further comprising a plurality of color conversion layers above the plurality of light emitting elements, respectively.

15. The semiconductor module according to claim 14 , further comprising another light shielding layer disposed between the plurality of color conversion layers adjacent to each other.

16. A semiconductor module production method comprising:

forming a plurality of light emitting elements from a semiconductor layer grown on a growth substrate;

peeling the growth substrate from the plurality of light emitting elements by laser irradiation;

laying a light shielding layer on a base substrate, so as to cover an upper surface of the base substrate, an entirely exposed surface of each of the plurality of light emitting elements, and a metal terminal, after peeling the growth substrate; and

removing a portion of the light shielding layer on an upper surface of each of the plurality of light emitting elements and a portion of the light shielding layer on the metal terminal, after filling the light shielding layer,

wherein the plurality of light emitting elements are electrically connected to a drive circuit formed in the base substrate,

wherein the metal terminal is provided on the base substrate, and supplies electric power from outside to drive the drive circuit, and

wherein the metal terminal is in contact with a pad electrode that is embedded in the base substrate and is provided in the drive circuit formed in the base substrate.