Luminophore combination, conversion element, and optoelectronic device

1. A phosphor combination comprising:

a first phosphor;

a second phosphor, wherein the second phosphor is a red-emitting quantum dot phosphor; and

a third phosphor that is a red-emitting phosphor, wherein the third phosphor has the formula

(MB)(TA) 3−2x (TC) 1+2x O 4−4x N 4x :E

wherein:

TA is selected from a group of monovalent metals comprising Li, Na, Cu, Ag, and combinations thereof;

MB is selected from a group of divalent metals comprising Mg, Ca, Sr, Ba, Zn, and combinations thereof;

TC is selected from a group of trivalent metals comprising B, Al, Ga, In, Y, Fe, Cr, Sc, rare earth metals, and combinations thereof;

E is selected from a group comprising Eu, Mn, Ce, Yb, and combinations thereof; and

0<x<0.875.

2. The phosphor combination as claimed in claim 1 , further comprising a third phosphor that is a red-emitting phosphor.

3. The phosphor combination as claimed in claim 1 , wherein the first phosphor is a green-emitting phosphor.

4. The phosphor combination as claimed in claim 1 , wherein the first phosphor is not a quantum dot phosphor.

5. The phosphor combination as claimed in claim 1 , wherein the first phosphor comprises particles having a mean particle diameter ranging from 1 μm to 1000 μm.

6. The phosphor combination as claimed in claim 1 , wherein the red-emitting quantum dot phosphor having a mean particle diameter ranging from 1 nm to 300 nm.

7. The phosphor combination as claimed in claim 6 , wherein the red-emitting quantum dot phosphor comprises at least one of the semiconductor materials selected from the group comprising: CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgTe, HgSe, GaP, GaAs, GaSb, AlP, AlAs, AlSb, InP, InAs, InSb, SiC, InN, AN, solid solutions thereof, or combinations thereof.

8. The phosphor combination as claimed in claim 1 , wherein the red-emitting quantum dot phosphor has a core-shell structure.

9. The phosphor combination as claimed in claim 8 , wherein the red-emitting quantum dot phosphor comprises a core having a mean diameter ranging from 1 to 200 nm.

10. The phosphor combination as claimed in claim 1 , wherein the proportion of the red-emitting quantum dot phosphor relative to the total amount of phosphor in the phosphor combination comprises at most 60 percent by weight.

11. The phosphor combination as claimed in claim 1 , wherein the third phosphor crystallizes in the tetragonal space group P4 2 /m.

12. The phosphor combination as claimed in claim 1 , wherein x=0.5, such that the third phosphor has the formula (MB)Li 2 Al 2 O 2 N 2 :E, wherein MB is selected from a group of divalent metals comprising Mg, Ca, Sr, Ba, Zn, or combinations thereof, and wherein E is selected from a group comprising Eu, Mn, Ce, Yb, and combinations thereof.

13. The phosphor combination as claimed in claim 1 , wherein the third phosphor has the formula SrLi 2 Al 2 O 2 N 2 :Eu 2+ .

14. The phosphor combination as claimed in claim 1 , wherein the proportion of the third phosphor relative to the total amount of phosphor in the phosphor combination is at least 10 percent by weight.

15. The phosphor combination as claimed in claim 1 , further comprising at least one further phosphor.

16. The phosphor combination as claimed in claim 1 , wherein 0.45<x<0.55.

17. A conversion element comprising the phosphor combination as claimed in claim 1 .

18. An optoelectronic device comprising:

a radiation-emitting semiconductor chip configured to emit electromagnetic radiation in a first wavelength range; and

the phosphor combination as claimed in claim 1 .

19. The optoelectronic device as claimed in claim 18 , further comprising a conversion element arranged on the radiation-emitting semiconductor chip and/or a potting situated on the radiation-emitting semiconductor chip; wherein the phosphor combination is present in the conversion element or in the potting.