Process for manufacturing transferable thin layer
The invention relates to a process for the preparation of a semiconductor material comprising at least one entirely monocrystalline semiconductor layer, said process comprising the steps of preparation of the surface of a first substrate to receive a monocrystalline silicon layer; deposition by Plasma-Enhanced Chemical Vapor Deposition (PECVD) of a layer of monocrystalline silicon by epitaxial growth with a growth rate gradient on the silicon layer monocrystalline obtained in step (i); and epitaxial growth of a monocrystalline layer of a semiconductor material on the monocrystalline silicon layer obtained in step (ii), to thus obtain a material comprising at least one entirely monocrystalline semiconductor layer. The invention also relates to a multilayer material comprising a monocrystalline layer of semiconductor material.
1. A process for the preparation of a semiconductor material comprising at least one entirely monocrystalline semiconductor layer, said process comprising:
(i) preparing a surface of a first substrate to receive a layer of monocrystalline silicon;
(ii) depositing by Plasma-Enhanced Chemical Vapor Deposition (PECVD) a layer of monocrystalline silicon by epitaxial growth with a growth rate gradient on the first substrate prepared in (i); and
(iii) epitaxial growing a monocrystalline layer of a semiconductor material on the monocrystalline silicon layer obtained in (ii), thereby obtaining a material comprising at least one entirely monocrystalline semiconductor layer.
2. The process of claim 1 , wherein the process comprises, after the epitaxial growing in (iii), (iv) detaching at least the monocrystalline layer of semiconductor material formed by epitaxial growth at (iii) for its physical separation from the first substrate, and (v) transferring at least the layer of semiconductor material formed by epitaxial growth, onto a second substrate.
3. The process of claim 2 , wherein the deposition technique (v) on the second substrate is chosen from a technique comprising: anodic bonding, or the use of silicone, a polyimide tape or a high temperature glue, or any combination thereof.
4. The process of claim 2 , wherein the detachment (iv) of the monocrystalline layer of semiconductor material is carried out by mechanical or thermal treatment, or any one of their combinations.
5. The process of claim 1 , wherein preparation (i) of the surface of the first substrate comprises the removal of oxides present on the surface of the first substrate intended to receive the silicon layer.
6. The process of claim 1 , wherein said PECVD is implemented for the formation of a plasma forming SiH 3 radicals then of a plasma forming silicon clusters.
7. The process of claim 1 , wherein the temperature of PECVD (ii) and epitaxial growth (iii) is less than 400° C.
8. The process of claim 1 , wherein the epitaxial growth (iii) is implemented with one or more elements chosen from among: Si, Ge, SiGe.
9. The process of claim 1 , wherein the epitaxial growth (iii) is implemented with a technique chosen from among PECVD, CVD, MBE, or any of their combinations.
10. An entirely monocrystalline multilayer semiconductor material that may be obtained by a process according to claim 1 , said entirely monocrystalline multilayer semiconductor material comprising a first substrate on which is deposited a monocrystalline silicon layer, said entirely monocrystalline material having a substrate/silicon layer interface having a peak hydrogen atom concentration greater than 1×10 21 atoms/cm 3 .
11. The entirely crystalline multilayer semiconductor material according to claim 10 , wherein the layer of monocrystalline silicon has a layer of an entirely monocrystalline semiconductor material on the face opposite to the first substrate.
12. An entirely monocrystalline multilayer semiconductor material that may be obtained by a process according to claim 1 , said entirely monocrystalline multilayer semiconductor material comprising a first substrate on which is deposited a monocrystalline silicon layer, said entirely monocrystalline multilayer semiconductor material having a substrate/silicon layer interface having, by spectroscopic ellipsometry, oscillations greater than 0.2 ε, in the photon energy range from 1.5 to 3 eV.
13. The entirely crystalline multilayer semiconductor material according to claim 12 , wherein the layer of monocrystalline silicon has a layer of a monocrystalline semiconductor material on the face opposite to the first substrate.
14. The entirely monocrystalline multilayer semiconductor material according to claim 11 , wherein said entirely monocrystalline multilayer semiconductor material having a substrate/silicon layer interface has, by spectroscopic ellipsometry, oscillations greater than 0.5 ε, in the photon energy range from 1.5 to 3 eV.
15. The entirely crystalline monocrystalline multilayer semiconductor material according to claim 11 , wherein said entirely monocrystalline multilayer semiconductor material having a substrate/silicon layer interface has, by spectroscopic ellipsometry, oscillations greater than 0.5 ε, in the photon energy range from 1.5 to 2.5 eV.
16. A semiconductor material characterized in that may be obtained by a process according to claim 1 , said semiconductor material comprising at least one entirely monocrystalline semiconductor layer.
17. A multilayer semiconductor material that may be obtained by a process according to claim 1 , said multilayer semiconductor material comprising a first substrate on which is deposited a monocrystalline layer of semiconductor material with a thickness of 1 nanometer (nm) to 10 micrometers (μm), and one or more layers of one or more other materials.
18. The multilayer semiconductor material according to claim 17 , wherein the substrate is chosen from among: glass, a metal or metal alloy, a polymer, including one chosen from among co-polymers, a flexible material, an elastomer, or a thermoplastic elastomer.