Method for manufacturing solar cell

1. A method of manufacturing a solar cell, the method comprising:

forming, on a substrate, an inorganic seed layer conforming to the substrate using a BO source, an A-doped BO source, or an A x O y source and the BO source, where A denotes an alkali metal, B denotes a divalent metal cation, and O denotes oxygen; and

supplying organic halides onto the inorganic seed layer.

2. The method of claim 1 , wherein:

the source is a target; and

the forming of the inorganic seed layer is accomplished by sputtering.

3. The method of claim 1 , wherein the forming of the inorganic seed layer is accomplished by chemical vapor deposition (CVD) or atomic layer deposition (ALD).

4. The method of claim 1 , wherein a thickness of the inorganic seed layer ranges from 10 to 200 nm.

5. The method of claim 1 , wherein the organic halide is an A′X composition, where A′ denotes +1 monovalent organic ammonium or organic amidinium, and X denotes halogen ions.

6. The method of claim 1 , wherein the supplying of the organic halides is accomplished by any one of an evaporation method, a physical vapor deposition (CVD) method, a physical vapor deposition (PVD) method, and a vapor annealing method.

7. The method of claim 1 , wherein the supplying of the organic halides is performed at a substrate temperature of 25 to 200° C. for 120 minutes or less.

8. The method of claim 1 , wherein the supplying of the organic halides includes supplying the organic halides and converting the organic halides into a perovskite absorbing layer by reaction with the inorganic seed layer.

9. The method of claim 1 , further comprising converting the organic halides into a perovskite absorbing layer after the supplying of the organic halides.

10. The method of claim 9 , wherein a thickness of the perovskite absorbing layer ranges from 50 to 1,000 nm.

11. The method of claim 10 , wherein the perovskite absorbing layer includes FA 1-x Cs x PbBr y I 3-y , where, 0≤x≤1, 0≤y≤3.

12. The method of claim 1 , further comprising performing post-heat treatment after the supplying of the organic halides.

13. The method of claim 12 , wherein the post-heat treatment is solvent treatment and is performed at a temperature of 80 to 200° C. for 120 minutes or less.

14. The method of claim 9 , further comprising:

forming a first conduction-type charge transport layer before the inorganic seed layer is formed; and

forming a second conduction-type charge transport layer after the supplying of the organic halides or the converting the organic halides into the perovskite absorbing layer.

15. The method of claim 1 , wherein the solar cell includes:

a first solar cell serving as a lower solar cell; and

a perovskite solar cell serving as an upper solar cell, and

a bandgap of the first solar cell is smaller than a bandgap of the perovskite solar cell.

16. The method of claim 1 , wherein:

the solar cell includes a silicon solar cell serving as a lower solar cell, and

a perovskite solar cell serving as an upper solar cell, and

the silicon solar cell includes a substrate,

a first conduction layer located on a first surface of the substrate, and

a second conduction layer located on a second surface of the substrate.

17. The method of claim 16 , wherein the silicon solar cell includes:

a first passivation layer located between the substrate and the first conduction layer; and

a second passivation layer located between the substrate and the second conduction layer.

18. The method of claim 16 , wherein the substrate and the first conduction layer have the same semiconductor conduction type.

19. The method of claim 16 , wherein the substrate and the second conduction layer have the same semiconductor conduction type.

20. The method of claim 1 , wherein the inorganic seed layer is a porous layer.