Radiation-emitting semiconductor component
A radiation-emitting semiconductor component is disclosed. In an embodiment, a component includes a semiconductor layer sequence and a carrier on which the semiconductor layer sequence is arranged, wherein the semiconductor layer sequence comprises an active region configured for generating radiation, an n-conducting mirror region and a p-conducting mirror region, wherein the active region is arranged between the n-conducting mirror region and the p-conducting mirror region, and wherein the p-conducting mirror region is arranged closer to the carrier than the active region.
1. A radiation-emitting semiconductor component comprising:
a semiconductor layer sequence; and
a carrier on which the semiconductor layer sequence is arranged,
wherein the semiconductor layer sequence comprises an active region configured for generating radiation, an n-conducting mirror region and a p-conducting mirror region,
wherein the active region is arranged between the n-conducting mirror region and the p-conducting mirror region,
wherein the p-conducting mirror region is arranged closer to the carrier than the active region, and
wherein the n-conducting mirror region contains at least one of Te, Sn, or Se.
2. The radiation-emitting semiconductor component according to claim 1 , wherein the carrier is n-conductively doped.
3. The radiation-emitting semiconductor component according to claim 1 , wherein the carrier comprises GaAs doped with silicon.
4. The radiation-emitting semiconductor component according to claim 1 , wherein a tunnel junction is formed between the p-conducting mirror region and the carrier.
5. The radiation-emitting semiconductor component according to claim 4 , wherein a direct electrical connection is formed between the tunnel junction and the carrier.
6. The radiation-emitting semiconductor component according to claim 1 , wherein a main dopant of the n-conducting mirror region is different from silicon.
7. The radiation-emitting semiconductor component according to claim 1 , wherein the semiconductor layer sequence is based on In y Al x Ga (1−x−y ) P z As (1−z ).
8. The radiation-emitting semiconductor component according to claim 1 , wherein the radiation-emitting semiconductor component comprises a rear contact electrically conductively connected to the p-conducting mirror region via the carrier.
9. The radiation-emitting semiconductor component according to claim 1 , wherein the radiation-emitting semiconductor component comprises a front contact arranged on a side of the n-conducting mirror region facing away from the active region.
10. The radiation-emitting semiconductor component according to claim 1 , wherein the active region is divided into a plurality of segments.
11. The radiation-emitting semiconductor component according to claim 10 , wherein the segments are independently controllable of each other.
12. The radiation-emitting semiconductor component according to claim 1 , wherein the radiation-emitting semiconductor component comprises a current constriction structure.
13. The radiation-emitting semiconductor component according to claim 12 , wherein the current constriction structure comprises an oxide aperture.
14. The radiation-emitting semiconductor component according to claim 12 , wherein the current constriction structure comprises an implantation region.
15. The radiation-emitting semiconductor component according to claim 1 , wherein the radiation-emitting semiconductor component is a VCSEL.
16. The radiation-emitting semiconductor component according to claim 1 , wherein the semiconductor layer sequence comprises a radiation exit surface on a side opposite the carrier.
17. The radiation-emitting semiconductor component according to claim 16 , wherein the radiation-emitting semiconductor component comprises a rear contact electrically conductively connected to the p-conducting mirror region via the carrier, and wherein the rear contact forms a common rear contact for at least two or all segments.
18. A radiation-emitting semiconductor component comprising:
a semiconductor layer sequence; and
a carrier on which the semiconductor layer sequence is arranged,
wherein the semiconductor layer sequence comprises an active region configured for generating radiation, an n-conducting mirror region and a p-conducting mirror region,
wherein the active region is arranged between the n-conducting mirror region and the p-conducting mirror region,
wherein the p-conducting mirror region is arranged closer to the carrier than the active region, and
wherein the semiconductor layer sequence is based on In y Al x Ga (1−x−y )P z As (1−z) .