Array substrate, display apparatus, and method of fabricating array substrate

1. An array substrate, comprising:

a display area comprising a first array of subpixels; and

a partially transparent area comprising a second array of subpixels;

wherein the partially transparent area comprises a plurality of light emitting regions spaced apart from each other by a substantially transparent non-light emitting region;

the second array of subpixels is limited in the plurality of light emitting regions; and

the array substrate further comprises a plurality of photosensors and a plurality of first thin film transistors in the substantially transparent non-light emitting region;

wherein a respective one of the plurality of photosensors comprises a first polarity semiconductor layer, a second polarity semiconductor layer, and an intrinsic semiconductor layer connecting the first polarity semiconductor layer and the second polarity semiconductor layer;

a respective one of the plurality of first thin film transistors comprises a first gate electrode, a first active layer, and a first source electrode and a first drain electrode respectively connected to the first active layer; and

the first array of subpixels has a number density of subpixels higher than a number density of subpixels of the second array of subpixels.

2. The array substrate of claim 1 , wherein a respective one of the plurality of light emitting regions comprises multiple subpixels of the second array of subpixels;

the respective one of the plurality of light emitting regions is substantially surrounded by one or more photosensors of the plurality of photosensors; and

multiple photosensors of the plurality of photosensors in the substantially transparent non-light emitting region are electrically connected in parallel to a same one of the plurality of first thin film transistors.

3. The array substrate of claim 2 , wherein, in the display area and the plurality of light emitting regions of the partially transparent area, the array substrate comprises a plurality of second thin film transistors for driving light emission in the display area and the plurality of light emitting regions;

wherein the array substrate further comprises a passivation layer on a side of the plurality of photosensors, the plurality of first thin film transistors, and the plurality of second thin film transistors away from a base substrate; and

one or more layers on a side of the passivation layer away from the base substrate, and limited in the display area and in the plurality of light emitting regions of the partially transparent area;

wherein the one or more layers are absent in the substantially transparent non-light emitting region.

4. The array substrate of claim 1 , wherein the second polarity semiconductor layer is electrically connected to a bias electrode; and

the bias electrode, the first source electrode, and the first drain electrode are in a same layer and comprise a same material.

5. The array substrate of claim 1 , wherein, in the display area and the plurality of light emitting regions of the partially transparent area, the array substrate comprises a plurality of second thin film transistors for driving light emission in the display area and the plurality of light emitting regions;

a respective one of the plurality of second thin film transistors comprises a second gate electrode, a second active layer, and a second source electrode and a second drain electrode respectively connected to the second active layer;

the second active layer, the intrinsic semiconductor layer, and the first active layer are in the same layer and comprise the same polysilicon material.

6. The array substrate of claim 5 , wherein the second polarity semiconductor layer is electrically connected to a bias electrode; and

the bias electrode, the first source electrode, the first drain electrode, the second source electrode, and the second drain electrode are in a same layer and comprise a same material.

7. The array substrate of claim 1 , wherein multiple photosensors of the plurality of photosensors in the substantially transparent non-light emitting region are electrically connected in parallel to a same bias electrode.

8. The array substrate of claim 1 , further comprising a light shielding layer substantially surrounding a respective one of the plurality of light emitting regions, and configured to shield at least a portion of light emitted out of the respective one of the plurality of light emitting regions from being received by an adjacent photosensor in the substantially transparent non-light emitting region.

9. The array substrate of claim 1 , further comprising a light shielding layer substantially surrounding a respective one of the plurality of photosensors, and configured to shield the respective one of the plurality of photosensors from light emitted out of an adjacent subpixel in the plurality of light emitting regions.

10. The array substrate of claim 1 , further comprising a buffer layer between the first active layer and a base substrate;

wherein the first active layer and the first polarity semiconductor layer are in direct contact with the buffer layer.

11. The array substrate of claim 1 , wherein the first polarity semiconductor layer comprises amorphous silicon doped with a P-type dopant; and

the second polarity semiconductor layer comprises indium tin oxide.

12. The array substrate of claim 1 , wherein the first array of subpixels comprises first subpixels of a first color, first subpixels of a second color, and first subpixels of a third color;

the second array of subpixels comprises second subpixels of the first color, second subpixels of the second color, and second subpixels of the third color;

a number density of the first subpixels of the first color is substantially the same as a number density of the second subpixels of the first color;

a number density of the first subpixels of the second color is substantially the same as a number density of the second subpixels of the second color; and

a number density of the first subpixels of the third color is approximately twice of a number density of the second subpixels of the third color.

13. A display apparatus, comprising the array substrate of claim 1 , and one or more integrated circuits connected to the array substrate.

14. An array substrate, comprising:

a display area comprising a first array of subpixels; and

a partially transparent area comprising a second array of subpixels;

wherein the partially transparent area comprises a plurality of light emitting regions spaced apart from each other by a substantially transparent non-light emitting region;

the second array of subpixels is limited in the plurality of light emitting regions; and

the array substrate further comprises a plurality of photosensors and a plurality of first thin film transistors in the substantially transparent non-light emitting region;

wherein a respective one of the plurality of photosensors comprises a first polarity semiconductor layer, a second polarity semiconductor layer, and an intrinsic semiconductor layer connecting the first polarity semiconductor layer and the second polarity semiconductor layer; and

a respective one of the plurality of first thin film transistors comprises a first gate electrode, a first active layer, and a first source electrode and a first drain electrode respectively connected to the first active layer;

wherein the intrinsic semiconductor layer and the first active layer are in a same layer and comprise a same polysilicon material;

the first polarity semiconductor layer is electrically connected to the first source electrode; and

the second polarity semiconductor layer comprises a metal oxide conductive material doped with an N-type dopant.

15. A method of fabricating an array substrate, comprising:

forming a first array of subpixels in a display area; and

forming a second array of subpixels in a partially transparent area;

wherein the partially transparent area comprises a plurality of light emitting regions spaced apart from each other by a substantially transparent non-light emitting region;

the second array of subpixels is limited in the plurality of light emitting regions; and

the method further comprises forming a plurality of photosensors and forming a plurality of first thin film transistors in the substantially transparent non-light emitting region;

wherein a respective one of the plurality of photosensors is formed to comprise a first polarity semiconductor layer, a second polarity semiconductor layer, and an intrinsic semiconductor layer connecting the first polarity semiconductor layer and the second polarity semiconductor layer;

a respective one of the plurality of first thin film transistors is formed to comprise a first gate electrode, a first active layer, and a first source electrode and a first drain electrode respectively connected to the first active layer;

the first array of subpixels has a number density of subpixels higher than a number density of subpixels of the second array of subpixels.

16. The method of claim 15 , wherein the intrinsic semiconductor layer and the first active layer are formed in a same layer using a same polysilicon material and a same mask plate;

the first polarity semiconductor layer is electrically connected to the first source electrode; and

the second polarity semiconductor layer is formed using a metal oxide conductive material doped with an N-type dopant.

17. The method of claim 15 , comprising:

forming a buffer layer on a base substrate;

forming a first amorphous silicon material layer on a side of the buffer layer away from the base substrate;

doping the first amorphous silicon material layer with a P-type dopant;

patterning the first amorphous silicon material layer to form the first polarity semiconductor layer;

forming a second amorphous silicon material layer on a side of the buffer layer and the first polarity semiconductor layer away from the base substrate;

crystallizing the second amorphous silicon material layer to form a polysilicon material layer; and

patterning the polysilicon material layer to form the intrinsic semiconductor layer and the first active layer;

wherein the intrinsic semiconductor layer is formed on a side of the first polarity semiconductor layer away from the base substrate, and is in direct contact with the first polarity semiconductor layer.

18. The method of claim 17 , subsequent to forming the intrinsic semiconductor layer and the first active layer, further comprising:

forming a metal oxide conductive material layer on a side of the intrinsic semiconductor layer away from the base substrate;

doping the metal oxide conductive material layer with the N-type dopant; and

patterning the metal oxide conductive material layer to form the second polarity semiconductor layer.

19. The method of claim 18 , subsequent to forming the second polarity semiconductor layer, further comprising:

forming a conductive material layer on a side of the second polarity semiconductor layer away from the base substrate;

patterning the conductive material layer to form a bias electrode, the first source electrode, and the first drain electrode;

wherein the bias electrode is electrically connected to the second polarity semiconductor layer.