Method for producing optoelectric semiconductor components, and optoelectronic semiconductor component

1. A method of manufacturing optoelectronic semiconductor components comprising the steps:

A) growing a semiconductor layer sequence for generating radiation onto a growth substrate,

B) structuring the semiconductor layer sequence into emitter strands so that the semiconductor layer sequence is removed in gaps between adjacent emitter strands,

C) applying a passivation layer, the semiconductor layer sequence at waveguide contacts remote from the growth substrate and the gaps remaining at least partially free,

D) producing at least one metal layer, which extends from the waveguide contacts into the gaps,

E) replacing the growth substrate with a carrier,

F) making vias in the carrier so that the metal layer and underside contacts of the semiconductor layer sequence facing the carrier are electrically contacted, and removing the carrier between at least some of the emitter strands and between emitter units following one another along the emitter strands, and

G) breaking the semiconductor layer sequence between the emitter units, so that facets are formed.

2. The method according to claim 1 ,

wherein

the semiconductor components are edge-emitting lasers

the passivation layer is applied directly to the semiconductor layer sequence and the metal layer is applied directly to the passivation layer, and

the metal layer reproduces the side surfaces of the emitter strands.

3. The method according to claim 1 ,

in which at least a part of the facets is configured for radiation extraction from the finished semiconductor components,

wherein the facets after step G) project beyond the associated carrier by at least 2 μm and by at most 50 μm.

4. The method according to claim 1 ,

in which, before step C), strip waveguides are produced at a side of the growth substrate remote from the semiconductor layer sequence, the strip waveguides being configured for one-dimensional radiation guiding in a direction parallel to the emitter strands,

wherein the waveguide contacts are each located at the associated strip waveguide.

5. The method according to claim 1 ,

in which a side of the semiconductor layer sequence remote from the growth substrate is planar in a region of a current feeding width of an active zone of the semiconductor layer sequence, so that the finished semiconductor components are gain-guided lasers.

6. The method according to claim 1 ,

where between steps D) and E)

a filling layer is produced which fills the gaps so that a side of the filling layer remote from the growth substrate is planar, and subsequently

an auxiliary carrier is attached to the filling layer.

7. The method according to claim 1 one of the previous claims,

in which an etch stop layer is produced between the semiconductor layer sequence and the growth substrate before or with step A),

wherein the etch stop layer is removed from the gaps in step B) and remaining residues of the etch stop layer are removed in step E) between detaching the growth substrate and attaching the carrier.

8. The method according to claim 7 ,

wherein, after removing the residues of the etch stop layer and before attaching the carrier

at least one contact layer is produced on each of the underside contacts, and

the contact layers are covered with a planarization layer.

9. The method according to claim 8 ,

wherein the carrier is directly and areally attached to the planarization layer by direct bonding and subsequently the auxiliary carrier is removed.

10. The method according to claim 1 ,

in which the metal layer extends on either side of the emitter strands from the respective waveguide contacts into the adjacent gaps, so that the emitter strands are symmetrically surrounded by the metal layer in the region of the semiconductor layer sequence as seen in cross-section.

11. The method according to claim 1 ,

in which exactly two of the vias are created per emitter unit in the direction perpendicular to the emitter strands.

12. The method according to claim 1 ,

in which three of the vias are created per emitter unit in the direction perpendicular to the emitter strands, the via for the underside contacts being located in each case centrally between the two vias for the waveguide contacts.

13. The method according to claim 1 ,

in which only one via is provided per emitter unit in the direction parallel to the emitter strands for each bottom contact and for each waveguide contact.

14. The method according to claim 1 ,

in which several of the vias are provided per emitter unit in the direction parallel to the emitter strands for each bottom contact and/or for each waveguide contact.

15. The method according to claim 14 ,

wherein along the emitter strands per emitter unit the metal layer and/or the

waveguide contacts are divided into a plurality of subregions which are electrically controllable independently of one another.

16. The method according to claim 1 ,

in which the metal layer extends along the emitter strands to at least 90% along the emitter units each.

17. The method according to claim 1 ,

in which the semiconductor layer sequence is based on InAlGaAs, the growth substrate is a GaAs substrate and the carrier is a silicon substrate.

18. The method according to claim 1 ,

in which several of the emitter units are electrically connected in series in a direction perpendicular to the emitter strands,

wherein only between emitter units connected in series the carrier remains between adjacent emitter strands in step F).

19. A surface-mountable optoelectronic semiconductor component comprising:

a carrier having a plurality of electrical vias therein,

a semiconductor layer sequence on the carrier with an active zone for generating radiation,

a passivation layer which completely covers side surfaces of the semiconductor layer sequence and which leaves a waveguide contact remote from the carrier at least partially free,

at least one metal layer extending from the waveguide contact to the carrier, wherein

the vias electrically contact the metal layer and an underside contact of the semiconductor layer sequence facing the carrier,

a facet of the semiconductor layer sequence for radiation extraction projects beyond the carrier, and

the metal layer reproduces the side surfaces so that an average distance between the metal layer and the semiconductor layer sequence is at most 1 μm.