Optoelectronic semiconductor component and method for producing optoelectronic semiconductor components
An optoelectronic semiconductor component and a method for producing optoelectronic semiconductor components are disclosed. In an embodiment a optoelectronic semiconductor component includes a plurality of semiconductor pillars, each pillar having a tip and a base region at opposite ends, an electrical isolation layer surrounding at least part of the semiconductor pillars on side faces and at least one first electrical contact pad and at least one second electrical contact pad for energizing the semiconductor pillars, wherein a first portion of the semiconductor pillars are emitter pillars configured to generate radiation, wherein a second portion of the semiconductor pillars are non-radiating electrical contact pillars, wherein the contact pillars extend through the isolation layer such that all contact pads are located on the same side of the isolation layer, and wherein each contact pillars is coated with an electrically ohmically conductive outer layer.
1. An optoelectronic semiconductor component comprising:
a plurality of semiconductor pillars, each pillar having a tip and a base region at opposite ends, wherein the semiconductor pillars comprise emitter pillars configured to generate radiation and non-radiating electrical contact pillars;
an electrical isolation layer surrounding at least part of the semiconductor pillars on side faces;
at least one first electrical contact pad and at least one second electrical contact pad for energizing the semiconductor pillars; and
at least one current distribution layer located on a side of the electrical isolation layer opposite the first and second contact pads, the current distribution layer configured to provide an electrical connection between at least one of the contact pillars and at least one of the emitter pillars,
wherein the semiconductor pillars extend through the electrical isolation layer such that the first and second contact pads are located on the same side of the electrical isolation layer,
wherein the tip of each of the contact pillars is coated with an electrically ohmically conductive outer layer,
wherein, for each current distribution layer, the electrically ohmically conductive outer layer is arranged between the current distribution layer and the tip of the at least one of the contact pillars so that the current distribution layer is in direct contact with the electrically ohmically conductive outer layer and the tip of the at least one of the emitter pillars facing the current distribution layer, and
wherein the electrical isolation layer is arranged laterally between the side faces of the emitter pillars and side faces of the electrically ohmically conductive outer layer coated on the contact pillars.
2. The optoelectronic semiconductor component according to claim 1 , wherein the at least one of the emitter pillars are arranged rotationally symmetrically around the at least one of the contact pillars, when viewed from above.
3. The optoelectronic semiconductor component according to claim 1 ,
wherein the electrically ohmically conductive outer layer comprises a metallic layer impermeable to the radiation.
4. The optoelectronic semiconductor component according to claim 3 , wherein the current distribution layer is permeable to the radiation, and wherein a thickness of the current distribution layer is between 10 nm and 0.4 μm inclusive.
5. The optoelectronic semiconductor component according to claim 1 , wherein the radiation of the emitter pillars is configured to exit the optoelectronic semiconductor component through the current distribution layer.
6. The optoelectronic semiconductor component according to claim 1 ,
wherein the emitter pillars and the contact pillars are identical except for the electrically ohmically conductive outer layer.
7. The optoelectronic semiconductor component according to claim 1 , wherein the electrically ohmically conductive outer layer protrude into the current distribution layer.
8. The optoelectronic semiconductor component according to claim 1 , wherein the electrical isolation layer is a cured silicone.
9. The optoelectronic semiconductor component according to claim 1 , wherein the electrical isolation layer is a cured thermoplastic.
10. The optoelectronic semiconductor component according to claim 1 , wherein the optoelectronic semiconductor component accommodates up to 30 contact pillars per μm 2 .
11. The optoelectronic semiconductor component according to claim 1 , wherein a height of the current distribution layer is not more than 20% of a mean height of the semiconductor pillars.