Method for forming hermetic seals in MEMS devices
A method of processing a double sided wafer of a microelectromechanical device includes spinning a resist onto a first side of a first wafer. The method further includes forming pathways within the resist to expose portions of the first side of the first wafer. The method also includes etching one or more depressions in the first side of the first wafer through the pathways, where each of the depressions have a planar surface and edges. Furthermore, the method includes depositing one or more adhesion metals over the resist such that the one or more adhesion metals are deposited within the depressions, and then removing the resist from the first wafer. The method finally includes depositing indium onto the adhesion metals deposited within the depressions and bonding a second wafer to the first wafer by compressing the indium between the second wafer and the first wafer.
1. A microelectromechanical system, comprising:
a first wafer, the first wafer comprising:
a first side having a peripheral region surrounding a central region,
a second side opposite the first side, and
one or more depressions disposed entirely within and continuously around the peripheral region of the first side of the first wafer, each of the one or more depressions including edges;
one or more adhesive metals disposed within the one or more depressions;
indium disposed on the one or more adhesive metals; and
a second wafer bonded to the first side of the first wafer via the indium.
2. The microelectromechanical system of claim 1 , further comprising:
a third wafer bonded to the second side of the first wafer via a bond formed by a force applied to the first wafer and the third wafer.
3. The microelectromechanical system of claim 2 , wherein the third wafer is bonded to the first wafer via a hermetic bond.
4. The microelectromechanical system of claim 2 , wherein the second wafer is hermetically bonded to the first side of the first wafer.
5. The microelectromechanical system of claim 2 , wherein the second and third wafers are silicon wafers.
6. The microelectromechanical system of claim 2 , wherein the first wafer is a glass wafer.
7. The microelectromechanical system of claim 1 , wherein each of the depressions have a first depth, the adhesive metals have a first height, and the first depth is greater than the first height.
8. The microelectromechanical system of claim 1 , further comprising indium disposed on the one or more adhesive metals extending out from the one or more depressions and spaced from the edges of the one or more depressions.
9. The microelectromechanical system of claim 1 , wherein the one or more depressions are concentric to the first wafer.
10. The microelectromechanical system of claim 1 , wherein the one or more depressions are etched into the first side of the first wafer via isotropic etching.
11. The microelectromechanical system of claim 1 , wherein the one or more adhesion metals comprise:
a first adhesion metal of titanium, and
a second adhesion metal of gold.
12. The microelectromechanical system of claim 1 , wherein the indium is compressed between the first wafer and the second wafer.
13. The microelectromechanical system of claim 12 , wherein the edges of the one or more depressions form shear points for the indium when the indium is compressed.
14. A microelectromechanical system, comprising:
a first wafer, the first wafer comprising:
a first side having a peripheral region surrounding a central region,
a second side opposite the first side, and
one or more depressions disposed within the peripheral region of first side of the first wafer, each of the one or more depressions including edges;
one or more adhesive metals disposed within the one or more depressions;
a second wafer bonded to the first side of the first wafer;
a third wafer bonded to the second side of the first wafer; and
indium disposed on the one or more adhesive metals extending out from the one or more depressions and spaced from the edges of the one or more depressions.
15. The microelectromechanical system of claim 14 , wherein the indium is compressed between the first wafer and the second wafer, such that the edges of the one or more depressions form shear points for the indium when the indium is compressed.
16. The microelectromechanical system of claim 14 , wherein the second wafer is hermetically bonded to the first side of the first wafer, and wherein the third wafer is hermetically bonded to the second side of the first wafer.
17. The microelectromechanical system of claim 14 , wherein the second and third wafers are silicon wafers.
18. The microelectromechanical system of claim 14 , wherein the first wafer is a glass wafer.
19. The microelectromechanical system of claim 14 , wherein each of the depressions have a first depth, the adhesive metals have a first height, and the first depth is greater than the first height.
20. The microelectromechanical system of claim 14 , the one or more depressions extend continuously around the peripheral region of the first wafer.