Electrochromic devices
Conventional electrochromic devices frequently suffer from poor reliability and poor performance. Improvements are made using entirely solid and inorganic materials. Electrochromic devices are fabricated by forming an ion conducting electronically insulating interfacial region that serves as an IC layer. In some methods, the interfacial region is formed after formation of an electrochromic and a counter electrode layer, which are in direct contact with one another. The interfacial region contains an ion conducting electronically insulating material along with components of the electrochromic and/or the counter electrode layer. Materials and microstructure of the electrochromic devices provide improvements in performance and reliability over conventional devices. In addition to the improved electrochromic devices and methods for fabrication, integrated deposition systems for forming such improved devices are also disclosed.
1. An electrochromic device comprising:
(a) an electrochromic layer comprising an electrochromic material,
wherein the electrochromic material comprises tungsten oxide mixed with a metal oxide selected from the group consisting of molybdenum oxide, vanadium oxide, titanium oxide, and combinations thereof;
(b) a counter electrode layer comprising a counter electrode material,
wherein the counter electrode material comprises nickel oxide mixed with tungsten oxide and tantalum,
wherein the electrochromic device is all solid state.
2. The electrochromic device of claim 1 , wherein the electrochromic material comprises tungsten oxide mixed with molybdenum oxide.
3. The electrochromic device of claim 1 , wherein the electrochromic material comprises tungsten oxide mixed with vanadium oxide.
4. The electrochromic device of claim 1 , wherein the electrochromic material comprises tungsten oxide mixed with titanium oxide.
5. The electrochromic device of claim 1 , wherein the electrochromic material comprises tungsten oxide mixed with molybdenum oxide and titanium oxide.
6. The electrochromic device of claim 1 , wherein the electrochromic device is formed by sputtering on a substrate.
7. An electrochromic device precursor comprising:
(a) a substrate;
(b) an electrochromic layer comprising an electrochromic material,
wherein the electrochromic material comprises tungsten oxide mixed with a metal oxide selected from the group consisting of molybdenum oxide, vanadium oxide, and titanium oxide, and combinations thereof; and
(c) a counter electrode layer comprising a counter electrode material,
wherein the counter electrode material comprises nickel oxide mixed with tungsten oxide and tantalum,
wherein the electrochromic device precursor is all solid state and the electrochromic layer and counter electrode layer are in direct contact with each other.
8. The electrochromic device precursor of claim 7 , wherein the electrochromic material comprises tungsten oxide mixed with molybdenum oxide.
9. The electrochromic device precursor of claim 7 , wherein the electrochromic material comprises tungsten oxide mixed with vanadium oxide.
10. The electrochromic device precursor of claim 7 , wherein the electrochromic material comprises tungsten oxide mixed with titanium oxide.
11. The electrochromic device precursor of claim 7 , wherein the electrochromic material comprises tungsten oxide mixed with molybdenum oxide and titanium oxide.