Light-emitting device
A light-emitting device comprising VCSELs formed in a die. The VCSEL distribution is characterized by an essentially linear decrease in VCSEL density over the die from a highest VCSEL density in a first die region to a lowest VCSEL density in another die region. The VCSELs share a common anode and a common cathode for collective switching of the plurality of VCSELs. A method of manufacturing such a VCSEL die is also described.
1. A light-emitting device comprising:
a die;
an anode on the die;
a cathode on the die; and
a plurality of vertical cavity surface-emitting lasers (VCSELs) in the die in a VCSEL distribution with a VCSEL density of the plurality of VCSELs over the die essentially linearly decreasing from a highest VCSEL density in a first die region to a lowest VCSEL density in a second die region and a diameter of the plurality of VCSELs essentially linearly increases from the first die region having the highest VCSEL density to the second die region having the lowest VCSEL density,
each of the plurality of VCSELs are electrically coupled to the anode and the cathode.
2. The light-emitting device according to claim 1 , wherein the first die region and the second die region are at opposite ends of the die.
3. The light-emitting device according to claim 1 , wherein the first die region and the second die region are essentially annular in shape.
4. The light-emitting device according to claim 3 , wherein the first die region is along edges of the die and the second die region is in a center of the die.
5. The light-emitting device according to claim 3 , wherein the first die region is in a center of the die and the second die region is along edges of the die.
6. The light-emitting device according to claim 1 , wherein the VCSEL density in the first die region is at least 600 VCSELs per mm 2 .
7. The light-emitting device according to claim 1 , wherein the VCSEL density in the first die region is at least 1000 VCSELs per mm 2 .
8. The light-emitting device according to claim 1 , wherein the VCSEL density in the first die region is at least 1,500 VCSELs per mm 2 .
9. The light-emitting device according to claim 1 , wherein the VCSEL density in the second die region is at most 400 VCSELs per mm 2 .
10. The light-emitting device according to claim 1 , wherein the VCSEL density in the second die region is at most 200 VCSELs per mm 2 .
11. The light-emitting device according to claim 1 , wherein the VCSEL density in the second die region is at most 100 VCSELs per mm 2 .
12. The light-emitting device according to claim 1 , wherein the diameter of VCSELs of the plurality of VCSELs in the first die region is in a range of 6 μm-8 μm.
13. The light-emitting device according to claim 1 , wherein the diameter of VCSELs of the plurality of VCSELs in the second die region is in a range of 10 μm-15 μm.
14. The light-emitting device according to claim 1 , wherein the plurality of VCSELs are arranged in the die in an essentially regular arrangement.
15. The light-emitting device according to claim 14 , wherein the essentially regular arrangement is an essentially hexagonal array.
16. The light-emitting device according to claim 1 , wherein the die comprises:
a first distributed Bragg reflector mirror,
a second distributed Bragg reflector mirror, and
an active region between the first distributed Bragg reflector mirror and the second distributed Bragg reflector mirror.
17. A method of manufacturing a vertical cavity surface-emitting laser (VCSEL) die, the method comprising:
allocating a first region of the VCSEL die to a highest VCSEL density;
allocating a second region of the VCSEL die to a lowest VCSEL density;
forming a plurality of VCSELs over the VCSEL die with an essentially linear decrease in VCSEL density from the first region to the second region and an essentially linear increase in diameter of the plurality of VCSELs from the first region having the highest VCSEL density to the second region having the lowest VCSEL density; and
electrically coupling the plurality of VCSELs to a common cathode and a common anode.
18. The method according to claim 17 , wherein the forming the plurality of VCSELs comprises depositing a plurality of metal contacts shaped to define an aperture on an emission face of the VCSEL die.
19. The method according to claim 17 , wherein the forming the plurality of VCSELs further comprises forming respective VCSELs of the plurality of VCSELs in the first region with a density of at most 40 μm.
20. The method according to claim 17 , wherein the forming the plurality of VCSELs further comprises forming respective VCSELs of the plurality of VCSELs in the second region with a density of at least 50 μm.