Semiconductor module and semiconductor device including the same

1. A semiconductor module comprising:

a first semiconductor element;

an encapsulant that encapsulates the first semiconductor element; and

a first stacked substrate on which the first semiconductor element is disposed,

wherein:

the first stacked substrate comprises a first insulator substrate, a first inner conductive layer and a first outer conductive layer, the first insulator substrate comprising a first surface and a second surface opposite to the first surface, the first inner conductive layer being disposed on the first surface of the first insulator substrate, and the first outer conductive layer being disposed on the second surface of the first insulator substrate;

a part of the first surface of the first insulator substrate is located outside the encapsulant;

the first inner conductive layer is electrically connected to the first semiconductor element inside the encapsulant;

a part of the first inner conductive layer is located on the part of the first surface located outside the encapsulant and is configured to enable an external member to be bonded to the part;

the first semiconductor element comprises a first main electrode and a second main electrode;

the first inner conductive layer comprises a first partial region and a second partial region which are independent of each other;

the first partial region is electrically connected to the first main electrode inside the encapsulant, and a part of the first partial region is located on the part of the first surface of the first insulator substrate located outside the encapsulant; and

the second partial region is electrically connected to the second main electrode inside the encapsulant, and a part of the second partial region is located on the part of the first surface of the first insulator substrate located outside the encapsulant.

2. The semiconductor module according to claim 1 , wherein

the part of the first partial region located outside the encapsulant is located on one side relative to the encapsulant, and

the part of the second partial region located outside the encapsulant is located on another side relative to the encapsulant.

3. The semiconductor module according to claim 1 , wherein the first main electrode is located on one surface of the first semiconductor element, and the second main electrode is located on another surface of the first semiconductor element.

4. The semiconductor module according to claim 1 , wherein

in the part of the first inner conductive layer located on the part of the first surface of the first insulator substrate located outside the encapsulant, a bonding area to be bonded to the external member is defined, and

the bonding area comprises at least one of a concave portion opposed to the external member and a convex portion protruding toward the external member.

5. The semiconductor module according to claim 1 , wherein

in the part of the first inner conductive layer located on the part of the first surface of the first insulator substrate located outside the encapsulant, a bonding area to be bonded to the external member is defined, and

a groove, a wall, a plurality of holes, or a plurality of projections is provided along at least a part of a boundary of the bonding area.

6. A semiconductor device comprising:

the semiconductor module according to claim 1 , and

a circuit board on which the semiconductor module is disposed,

wherein

the part of the first inner conductive layer located outside the encapsulant is electrically connected to the circuit board.

7. The semiconductor device according to claim 6 , wherein the first insulator substrate of the semiconductor module is disposed in parallel with the circuit board.

8. The semiconductor device according to claim 7 , wherein

an opening is provided in the circuit board, and

the semiconductor module is fixed to the circuit board such that at least a part thereof is located in the opening.

9. A semiconductor module comprising:

a first semiconductor element;

an encapsulant that encapsulates the first semiconductor element; and

a first stacked substrate on which the first semiconductor element is disposed,

wherein:

the first stacked substrate comprises a first insulator substrate, a first inner conductive layer and a first outer conductive layer, the first inner conductive layer being disposed on one side relative to the first insulator substrate, and the first outer conductive layer being disposed on another side relative to the first insulator substrate;

the first inner conductive layer is electrically connected to the first semiconductor element inside the encapsulant;

a part of the first inner conductive layer is located outside the encapsulant and is configured to enable an external member to be bonded to the part;

the first semiconductor element comprises a first main electrode and a second main electrode;

the first inner conductive layer comprises a first partial region and a second partial region which are independent of each other;

the first partial region is electrically connected to the first main electrode inside the encapsulant, and a part of the first partial region is located outside the encapsulant;

the second partial region is electrically connected to the second main electrode inside the encapsulant, and a part of the second partial region is located outside the encapsulant;

the first main electrode is located on one surface of the first semiconductor element, and the second main electrode is located on another surface of the first semiconductor element;

the semiconductor module further comprises a second stacked substrate opposed to the first stacked substrate with the first semiconductor element interposed therebetween;

the second stacked substrate comprises a second insulator substrate, a second inner conductive layer and a second outer conductive layer, the second inner conductive layer being disposed on one side relative to the second insulator substrate, and the second outer conductive layer being disposed on another side relative to the second insulator substrate;

the second inner conductive layer is electrically connected to each of the second main electrode of the first semiconductor element and the second partial region of the first inner conductive layer, inside the encapsulant; and

the second partial region of the first inner conductive layer is electrically connected to the second main electrode of the first semiconductor element via the second inner conductive layer.

10. The semiconductor module according to claim 9 , wherein a size of the first insulator substrate is larger than a size of the second insulator substrate.

11. The semiconductor module according to claim 9 , wherein an entirety of the second inner conductive layer is located inside the encapsulant.

12. The semiconductor module according to claim 9 , further comprising a second semiconductor element that is located between the first stacked substrate and the second stacked substrate and is encapsulated by the encapsulant,

wherein

the first inner conductive layer of the first stacked substrate further comprises a third partial region that is independent of the first partial region and the second partial region, and is electrically connected to the second semiconductor element,

the second inner conductive layer of the second stacked substrate comprises:

a fourth partial region electrically connected to the first semiconductor element; and

a fifth partial region independent of the fourth partial region and electrically connected to the second semiconductor element,

a part of the third partial region of the first inner conductive layer is located outside the encapsulant and is configured to enable an external member to be bonded thereto, and

the fifth partial region of the second inner conductive layer is electrically connected to the first partial region of the first inner conductive layer, inside the encapsulant.

13. The semiconductor module according to claim 12 , wherein in the first inner conductive layer, the part of the third partial region located outside the encapsulant is located on a same side relative to the encapsulant as the part of the first partial region located outside the encapsulant or the part of the second partial region located outside the encapsulant.

14. The semiconductor module according to claim 12 , wherein

each of the first semiconductor element and the second semiconductor element further comprises a signal electrode,

the first inner conductive layer further comprises a first signal circuit region and a second signal circuit region that are independent of the first partial region and the second partial region,

the first signal circuit region is electrically connected to the signal electrode of the first semiconductor element inside the encapsulant, and a part of the first signal circuit region is located outside the encapsulant and configured to enable an external member to be bonded thereto,

the second signal circuit region is electrically connected to the signal electrode of the second semiconductor element inside the encapsulant, and a part of the second signal circuit region is located outside the encapsulant and configured to enable an external member to be bonded thereto, and

the part of the first signal circuit region located outside the encapsulant and the part of the second signal circuit region located outside the encapsulant are located on a same side relative to the encapsulant as the part of the first partial region located outside the encapsulant, and extend along both sides of the first insulator substrate, respectively.

15. A semiconductor module comprising:

a first semiconductor element;

an encapsulant that encapsulates the first semiconductor element; and

a first stacked substrate on which the first semiconductor element is disposed,

wherein:

the first stacked substrate comprises a first insulator substrate, a first inner conductive layer and a first outer conductive layer, the first inner conductive layer being disposed on one side relative to the first insulator substrate, and the first outer conductive layer being disposed on another side relative to the first insulator substrate;

the first inner conductive layer is electrically connected to the first semiconductor element inside the encapsulant;

a part of the first inner conductive layer is located outside the encapsulant and is configured to enable an external member to be bonded to the part;

the first semiconductor element comprises a first main electrode and a second main electrode;

the first inner conductive layer comprises a first partial region and a second partial region which are independent of each other;

the first partial region is electrically connected to the first main electrode inside the encapsulant, and a part of the first partial region is located outside the encapsulant;

the second partial region is electrically connected to the second main electrode inside the encapsulant, and a part of the second partial region is located outside the encapsulant;

the first semiconductor element further comprises a signal electrode having a smaller size than the first main electrode and the second main electrode;

the first inner conductive layer further comprises a first signal circuit region independent of the first partial region and the second partial region;

the first signal circuit region is electrically connected to the signal electrode inside the encapsulant; and

a part of the first signal circuit region is located outside the encapsulant and is configured to enable an external member to be bonded thereto.

16. The semiconductor module according to claim 15 , wherein

the first signal circuit region comprises a first end electrically connected to the signal electrode and a second end located outside the encapsulant, the first signal circuit region extending from the first end to the second end, and

a width of the second end of the first signal circuit region is larger than a width of the first end of the first signal circuit region.

17. A semiconductor device comprising:

a semiconductor module comprising:

a first semiconductor element;

an encapsulant that encapsulates the first semiconductor element; and

a first stacked substrate on which the first semiconductor element is disposed,

the first stacked substrate comprising a first insulator substrate, a first inner conductive layer and a first outer conductive layer, the first inner conductive layer being disposed on one side relative to the first insulator substrate, and the first outer conductive layer being disposed on another side relative to the first insulator substrate,

the first inner conductive layer being electrically connected to the first semiconductor element inside the encapsulant, and

a part of the first inner conductive layer being located outside the encapsulant and being configured to enable an external member to be bonded to the part; and

a circuit board on which the semiconductor module is disposed,

wherein:

the part of the first inner conductive layer located outside the encapsulant is electrically connected to the circuit board;

the first insulator substrate of the semiconductor module is disposed in parallel with the circuit board;

an opening is provided in the circuit board;

the semiconductor module is fixed to the circuit board such that at least a part thereof is located in the opening;

at least a part of the encapsulant of the semiconductor module is located in the opening of the circuit board;

the first stacked substrate of the semiconductor module extends over the opening of the circuit board in at least one direction; and

one or more bonding portions between the first inner conductive layer of the first stacked substrate and the circuit board are located along a periphery of the opening.

18. The semiconductor device according to claim 17 , further comprising a cooler disposed adjacent to the semiconductor module.