Transversely-excited film bulk acoustic resonators with molybdenum conductors

1. An acoustic resonator device comprising:

a substrate having a surface;

a single-crystal piezoelectric plate having front and back surfaces, the back surface attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate; and

an interdigital transducer (IDT) formed on the front surface of the single-crystal piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm, the piezoelectric plate and the IDT configured such that a radio frequency signal applied to the IDT excites a primary shear acoustic mode in the diaphragm, wherein

the diaphragm is contiguous with the piezoelectric plate around at least 50% of a perimeter of the cavity,

the interleaved fingers of the IDT are substantially molybdenum, and

a thickness of the interleaved fingers of the IDT is greater than or equal to 0.25 times a thickness of the piezoelectric plate and less than or equal to 2.5 times the thickness of the piezoelectric plate.

2. The acoustic resonator device of claim 1 , wherein the thickness of the interleaved fingers of the IDT is greater than or equal to the thickness of the piezoelectric plate and less than or equal to 2.5 times the thickness of the piezoelectric plate.

3. The acoustic resonator device of claim 1 , further comprising:

a front-side dielectric layer deposited between the fingers of the IDT,

wherein the thickness of the interleaved fingers of the IDT is greater than or equal to 0.65 times the thickness of the piezoelectric plate and less than or equal to 2.5 times the thickness of the piezoelectric plate.

4. The acoustic resonator device of claim 3 , wherein the thickness of the interleaved fingers of the IDT is greater than or equal to the thickness of the piezoelectric plate and less than or equal to 2.5 times the thickness of the piezoelectric plate.

5. The acoustic resonator device of claim 1 , wherein

the thickness of the piezoelectric plate is greater than or equal to 300 nm and less than or equal to 500 nm.

6. The acoustic resonator device of claim 1 , wherein

a pitch of the interleaved fingers of the IDT is greater than or equal to 6 times the thickness of the piezoelectric plate and less than or equal to 12.5 times the thickness of the piezoelectric plate.

7. The acoustic resonator device of claim 1 , wherein

a direction of acoustic energy flow of the primary acoustic mode is substantially normal to the front and back surfaces of the diaphragm.

8. A filter device, comprising:

a substrate;

a single-crystal piezoelectric plate having front and back surfaces, the back surface attached to the surface of the substrate, portions of the single-crystal piezoelectric plate forming one or more diaphragms spanning respective cavities in the substrate;

a conductor pattern formed on the front surface, the conductor pattern including a plurality of interdigital transducers (IDTs) of a respective plurality of acoustic resonators, interleaved fingers of each of the plurality of IDTs disposed on one of the one or more diaphragms, the piezoelectric plate and all of the IDTs configured such that respective radio frequency signal applied to each IDT excite respective shear primary acoustic modes in the respective diaphragm, wherein

the interleaved fingers of all of the plurality of IDTs are substantially molybdenum,

the interleaved fingers of all of the plurality of IDTs have a common finger thickness, which is greater than or equal to 0.25 times a thickness of the piezoelectric plate and less than or equal to 2.5 times the thickness of the piezoelectric plate, and

the diaphragms of all of the plurality of acoustic resonator are contiguous with the piezoelectric plate around at least 50% of a perimeter of the respective cavities.

9. An acoustic resonator device comprising:

a substrate having a surface;

a single-crystal piezoelectric plate having front and back surfaces, the back surface attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate; and

an interdigital transducer (IDT) formed on the front surface of the single-crystal piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm, the piezoelectric plate and the IDT configured such that a radio frequency signal applied to the IDT excites a primary shear acoustic mode in the diaphragm, wherein

the interleaved fingers of the IDT comprise a lower layer closest to the diaphragm of a first material and an upper layer of a second material, the first material having lower acoustic loss than the second material and the second material having higher electrical and thermal conductivity than the first material, a thickness of the lower layer is different from a thickness of the upper layer.

10. The acoustic resonator device of claim 9 , wherein

the first material is one of molybdenum and tungsten, and

the second material is one of aluminum, copper, and gold.

11. The acoustic resonator device of claim 9 , wherein

a cross-sectional shape of the lower layer is different from a cross-sectional shape of the upper layer.

12. A filter device, comprising:

a substrate;

a single-crystal piezoelectric plate having front and back surfaces, the back surface attached to the surface of the substrate, portions of the single-crystal piezoelectric plate forming one or more diaphragms spanning respective cavities in the substrate; and

a conductor pattern formed on the front surface, the conductor pattern including a plurality of interdigital transducers (IDTs) of a respective plurality of acoustic resonators, interleaved fingers of each of the plurality of IDTs disposed on one of the one or more diaphragms, the piezoelectric plate and all of the IDTs configured such that respective radio frequency signal applied to each IDT excite respective shear primary acoustic modes in the respective diaphragm; and

a front-side dielectric layer deposited between the fingers of at least some, but not all, of the plurality of IDTs, wherein

the interleaved fingers of all of the plurality of IDTs are substantially molybdenum, and

the interleaved fingers of all of the plurality of IDTs have a common finger thickness, which is greater than or equal to 0.65 times a thickness of the piezoelectric plate and less than or equal to 2.5 times the thickness of the piezoelectric plate.

13. The filter device of claim 12 , wherein

a direction of acoustic energy flow of the respective primary acoustic modes excited by all of the IDTs is substantially normal to the front and back surfaces of the diaphragm.

14. The filter device of claim 12 , wherein

respective pitches of the interleaved fingers of all of the plurality of IDTs are greater than or equal to 6 times the thickness of the piezoelectric plate and less than or equal to 12.5 times the thickness of the piezoelectric plate.

15. The filter device of claim 12 , wherein

the common finger thickness is greater than or equal to the thickness of the piezoelectric plate and less than or equal to 2.5 times the thickness of the piezoelectric plate.

16. The filter device of claim 12 , wherein

the thickness of the piezoelectric plate is greater than or equal to 300 nm and less than or equal to 500 nm.

17. A filter device, comprising:

a substrate;

a single-crystal piezoelectric plate having front and back surfaces, the back surface attached to the surface of the substrate, portions of the single-crystal piezoelectric plate forming one or more diaphragms spanning respective cavities in the substrate;

a conductor pattern formed on the front surface, the conductor pattern including a plurality of interdigital transducers (IDTs) of a respective plurality of acoustic resonators, interleaved fingers of each of the plurality of IDTs disposed on one of the one or more diaphragms, the plurality of resonators including one or more shunt resonators and one or more series resonators;

a first dielectric layer having a first thickness deposited between the fingers of the IDTs of the one or more shunt resonators; and

a second dielectric layer having a second thickness less than the first thickness deposited between the fingers of the IDTs of the one or more series resonators, wherein

the interleaved fingers of all of the plurality of IDTs are substantially molybdenum, and

the interleaved fingers of all of the plurality of IDTs have a common thickness, which is greater than or equal to 0.65 times the thickness of the piezoelectric plate and less than or equal to 2.5 times the thickness of the piezoelectric plate.

18. The filter device of claim 17 , wherein

respective pitches of the interleaved fingers of all of the plurality of IDTs are greater than or equal to 6 times the thickness of the piezoelectric plate and less than or equal to 12.5 times the thickness of the piezoelectric plate.

19. The filter device of claim 17 , wherein

a direction of acoustic energy flow of the respective primary acoustic modes excited by all of the plurality of IDTs is substantially orthogonal to the front and back surfaces of the diaphragm.

20. The acoustic resonator device of claim 17 , wherein

the diaphragm of each of the plurality of acoustic resonator is contiguous with the piezoelectric plate around at least 50% of a perimeter of the respective cavity.

21. The filter device of claim 17 , wherein

the common thickness is greater than the thickness of the piezoelectric plate and less than 2.5 times the thickness of the piezoelectric plate.

22. The filter device of claim 17 , wherein

the thickness of the piezoelectric plate is greater than or equal to 300 nm and less than or equal to 500 nm.