High reliability high power high brightness blue laser diode systems and methods of making the same
There are provided high power, high brightness solid-state laser systems that maintain initial beam properties, including power levels, and do not have degradation of performance or beam quality, for at least 10,000 hours of operation. There are provided high power, high brightness solid-state laser systems containing Oxygen in their internal environments and which are free from siloxanes.
1. A high power, high brightness solid-state laser assembly, for providing a high-quality blue laser beam over long periods of time without substantial degradation of the laser beam properties, the assembly comprising:
a. a housing, the housing defining an internal cavity; wherein the internal cavity is isolated from an environment that is external to the housing;
b. a solid-state device for propagating a laser beam from a propagation surface of the solid-state device along a laser beam path, wherein the laser beam has a wavelength in the range of 410 nm to 500 nm; and wherein the laser beam has a power density of at least about 0.5 MW/cm 2 at the propagation surface of the solid-state device;
c. an optics assembly, the optics assembly in optical communication with the solid-state device and on the laser beam path;
d. wherein the solid-state device and the optics assembly are located within the housing and in the internal cavity, whereby the solid-state device and the optics assembly are isolated from the external environment;
e. the housing comprising a housing propagation surface, whereby the laser beam is transmitted from the housing into the external environment along the laser beam path; the housing propagation surface in optical communication with the optics assembly and on the laser beam path;
f. the laser beam upon exiting the housing propagation surface characterized by beam properties, the beam properties comprising: (i) a power of at least 100 W; and, (ii) a BPP of less than 100 mm-mrad;
g. the internal cavity being free from sources of silicon based contaminates, whereby during operation of the solid-state device SiO 2 production within the internal cavity is avoided; whereby the internal cavity avoids SiO 2 buildup; and,
h. whereby the degradation rate of the beam properties is 2.3% per khrs or less.
2. The assembly of claim 1 ,
a. wherein the solid-state device is selected from the group consisting of a Raman fiber laser, a diode laser, and a Raman laser based on a crystal; wherein the optics assembly comprises optical elements selected from the group consisting of collimating optics, focusing optics, lenses, mirrors, and beam combining optics;
b. wherein the beam properties further comprise a bandwidth of about 20 nm or less;
c. wherein the housing propagation surface is selected from the group consisting of a window and a fiber face;
d. wherein the BPP is less than about 40 mm-mrad; and,
e. the power density at the propagation surface of the solid-state device is from about 1 MW/cm 2 to about 1,000 MW/cm 2 .
3. The assembly of claim 1 ,
a. wherein the solid-state device is selected from the group consisting of a Raman fiber laser, a diode laser and a Raman laser based on a crystal; and the power of the laser beam is from about 100 W to about 1,000 W;
b. wherein the beam properties further comprise a bandwidth of about 20 nm or less;
c. the power density at the propagation surface of the solid-state device is from about 0.5 MW/cm 2 to about 1,000 MW/cm 2 and,
d. the degradation rate of the beam properties is less than 2.0% per khrs.
4. The assembly of claim 1 , wherein the internal cavity comprises a gas comprising at least 1% Oxygen; whereby during operation of the solid-state device CO 2 is created within the internal cavity from carbon based contaminates; whereby the propagation surface of the solid-state device and the optics assembly avoids Carbon buildup.
5. The assembly of claim 1 , wherein the degradation rate of the beam properties is 2.0% per khrs or less.
6. The assembly of claim 1 , wherein the degradation rate of the beam properties is 1.8% per khrs or less.
7. The assembly of claim 1 , wherein the assembly is characterized by having a lifetime of not less than 10,000 hours.
8. The assembly of claim 1 , wherein the sources of silicon based contaminates is selected from the group consisting of siloxanes, polymerized siloxanes, linear siloxanes, cyclic siloxanes, cyclomethicones, and poly-siloxanes.
9. The assembly of claim 4 , wherein the sources of carbon based contaminates is selected from the group consisting of solvent residues, oils, fingerprints and hydrocarbons.