Method for synthesizing core shell nanocrystals at high temperatures
The invention is in the field of nanostructure synthesis. The invention relates to methods for producing nanostructures, particularly Group III-V and Group II-VI semiconductor nanostructures. The invention also relates to high temperature methods of synthesizing nanostructures comprising simultaneous injection of cores and shell precursors.
1. A population of InP/ZnSe/ZnS nanostructures, wherein at least 75% of the population of nanostructures has a tetrahedral shape.
2. The population of nanostructures of claim 1 , wherein the nanostructures display a photoluminescence quantum yield of between 60% and 99%.
3. The population of nanostructures of claim 1 , wherein at least 85% of the nanostructures have a tetrahedral shape.
4. The population of nanostructures of claim 1 , wherein the population has a full width at half maximum (FWHM) of between 10 nm and 60 nm.
5. The population of nanostructures of claim 1 , wherein the population has a full width at half maximum (FWHM) of between 10 nm and 40 nm.