SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
A semiconductor device may include: a metal plate including a first surface and a second surface opposite to the first surface; two semiconductor chips bonded to the first surface side by side; a thermally anisotropic member provided at the metal plate between the two semiconductor chips; and a cooler provided on the second surface of the metal plate. A thermal conductivity of the thermally anisotropic member in a side-by-side direction of the two semiconductor chips may be lower than a thermal conductivity of the metal plate, and the thermal conductivity of the thermally anisotropic member in in-plane directions perpendicular to the side-by-side direction may be higher than the thermal conductivity of the metal plate.
1 . A semiconductor device comprising:
a metal plate including a first surface and a second surface opposite to the first surface;
two semiconductor chips bonded to the first surface side by side;
a thermally anisotropic member provided at the metal plate between the two semiconductor chips; and
a cooler provided on the second surface of the metal plate,
wherein
a thermal conductivity of the thermally anisotropic member in a side-by-side direction of the two semiconductor chips is lower than a thermal conductivity of the metal plate, and
the thermal conductivity of the thermally anisotropic member in in-plane directions perpendicular to the side-by-side direction is higher than the thermal conductivity of the metal plate.
2 . The semiconductor device according to claim 1 , wherein
a groove is provided in the second surface of the metal plate, and
the thermally anisotropic member is fitted in the groove.
3 . The semiconductor device according to claim 2 , wherein the groove penetrates the metal plate to the first surface.
4 . The semiconductor device according to claim 1 , wherein a grease and an insulating plate are interposed between the metal plate and the cooler.
5 . The semiconductor device according to claim 1 , wherein the thermally anisotropic member is in contact with the cooler.
6 . The semiconductor device according to claim 1 , wherein a groove is provided in the first surface of the metal plate, and
the thermally anisotropic member is fitted in the groove.
7 . The semiconductor device according to claim 1 , further comprising:
an additional metal plate bonded to the two semiconductor chips on an opposite side to the metal plate; and
an additional thermally anisotropic member provided at the additional metal plate between the two semiconductor chips,
wherein
a thermal conductivity of the additional thermally anisotropic member in the side-by-side direction is lower than a thermal conductivity of the additional metal plate, and
the thermal conductivity of the additional thermally anisotropic member in the in-plane directions perpendicular to the side-by-side direction is higher than the thermal conductivity of the additional metal plate.
8 . The semiconductor device according to claim 1 , wherein the thermally anisotropic member is constituted of graphene.
9 . The semiconductor device according to claim 1 , further comprising a resin package covering the two semiconductor chips and bonded to the metal plate.
10 . A manufacturing method of a semiconductor device comprising:
providing a groove in a first surface of a metal plate;
fitting a thermally anisotropic member into the groove;
bonding two semiconductor chips to the first surface of the metal plate side by side such that the thermally anisotropic member is located between the two semiconductor chips;
forming a resin package such that the resin package covers the two semiconductor chips and is bonded to the metal plate; and
attaching a cooler to a second surface of the metal plate opposite to the first surface,
wherein
the thermally anisotropic member is fitted into the groove such that:
a thermal conductivity of the thermally anisotropic member in a side-by-side direction of the two semiconductor chips is lower than a thermal conductivity of the metal plate, and
the thermal conductivity of the thermally anisotropic member in in-plane directions perpendicular to the side-by-side direction is higher than the thermal conductivity of the metal plate.