Semiconductor device and manufacturing method thereof
A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide a method for manufacturing a semiconductor device, and a semiconductor device produced thereby, that comprises an interposer without through silicon vias.
1. A method of manufacturing a semiconductor package, the method comprising:
providing a first structure (S 1 ) comprising:
a front side support structure; and
an S 1 dielectric layer directly on the front side support structure,
wherein the first structure comprises a first S 1 side facing away from the front side support structure, and a second S 1 side opposite the first S 1 side;
forming a first signal distribution structure (SDS 1 ) on the first S 1 side by, at least in part, sequentially forming a first plurality of layers of the first signal distribution structure on the first S 1 side in a first direction, the first plurality of layers comprising a first SDS 1 conductive layer that laterally routes electrical signals;
after said forming the first signal distribution structure, removing the front side support structure from the first structure;
coupling a semiconductor die to the first signal distribution structure in the first direction; and
after said coupling the semiconductor die and said removing the front side support structure from the first structure, forming a second signal distribution structure (SDS 2 ) on the first signal distribution structure by, at least in part, sequentially forming a second plurality of layers of the second signal distribution structure in a second direction opposite the first direction, the second signal distribution structure comprising a first SDS 2 conductive layer that laterally distributes electrical signals.
2. The method of claim 1 , wherein said forming the first signal distribution structure on the first S 1 side comprises, after said providing the first structure, forming the first signal distribution structure directly on the first S 1 side.
3. The method of claim 1 , wherein upon completion of the semiconductor package, at least a portion of the S 1 dielectric layer remains between the first signal distribution structure and the second signal distribution structure.
4. The method of claim 1 wherein said forming the first signal distribution structure is performed before said coupling the semiconductor die, and said forming the second signal distribution structure is performed after said coupling the semiconductor die.
5. The method of claim 1 , wherein the S 1 dielectric layer of the provided first structure has no apertures.
6. The method of claim 1 , wherein the first signal distribution structure and the second signal distribution structure are TSV-less.
7. The method of claim 1 , wherein the front side support structure comprises glass.
8. The method of claim 1 , comprising after said removing the front side support structure, removing at least a portion of the S 1 dielectric layer.
9. The method of claim 8 , wherein said removing at least a portion of the S 1 dielectric layer comprises removing only a portion of the S 1 dielectric layer.
10. The method of claim 1 , wherein said forming the first signal distribution structure comprises sequentially forming the first plurality of layers of the first signal distribution structure after said providing the first structure.
11. The method of claim 1 , wherein:
the semiconductor die comprises a front die side;
the semiconductor die comprises a die pad at the front die side; and
said coupling the semiconductor die to the first signal distribution structure comprises coupling the die pad to the first signal distribution structure through a conductive pillar.
12. The method of claim 11 , comprising forming an encapsulating material comprising a second encapsulant side facing toward the front side support structure, and a first encapsulant side opposite the second encapsulant side, where the encapsulating material laterally surrounds the semiconductor die and the conductive pillar.
13. The method of claim 11 , comprising prior to removing the front side support structure, coupling a back side support structure to the semiconductor die.