High speed photo detectors with reduced aperture metal contact and method therefor
A photodiode has a substrate. A mesa structure is formed on the substrate, wherein the mesa structure has an n region containing an n type dopant formed on the substrate, an intermediate region positioned on the n region and a p region formed on the intermediate region and containing a p type dopant. A contact is formed on a top surface of the mesa and attached to the p region. The contact is formed around an outer perimeter of the mesa. The mesa has a diameter of 30 um or less.
1. A photodiode comprising:
a substrate;
a mesa structure formed on the substrate, wherein the mesa structure comprises:
an n region containing an n type dopant formed on the substrate:
an intermediate region positioned on the n region;
a p region formed on the intermediate region and containing a p type dopant, wherein the p region is a zinc diffused p region;
a connection mechanism is formed on the top surface of the mesa and outside of the zinc diffused p region; and
a contact formed on a top surface of the mesa and attached to the p region,
wherein the contact is formed around an outer perimeter of the mesa,
wherein the mesa has a diameter of 30 μm or less, and
wherein the contact has a line size of 5 μm, the contact is formed of a plurality of sections equally spaced around the outer perimeter of the mesa and covers only one-third of the outer perimeter.
2. The photodiode of claim 1 , wherein the contact is formed of three sections, each of the three sections being equal in size, the three sections being equally spaced around the outer perimeter, each of the three sections covering only one-ninth of the outer perimeter.
3. The photodiode of claim 2 , comprising connection mechanism coupling each of the three sections together.
4. The photodiode of claim 1 , wherein the photodiode operates at a frequency of 25 GHz.
5. The photodiode of claim 4 , wherein the contact is formed of three sections, each of the three sections being equal in size, the three sections being equally spaced around the outer perimeter, each of the three sections only covering one-ninth of the outer perimeter.
6. The photodiode of claim 4 , wherein the contact is formed of two sections.
7. The photodiode of claim 6 , wherein a total length of the plurality of the three sections is less than or equal to one third of the outer perimeter of the mesa.
8. The photodiode of claim 6 , comprising connection mechanism coupling each of the two sections together.
9. The photodiode of claim 6 , wherein each of the two sections is equal in size and covers only one-sixth of the outer perimeter.
10. The photodiode of claim 9 , wherein a length of each of the two sections is greater than a width of each of the two sections.
11. A photodiode comprising:
a substrate;
a mesa structure formed on the substrate, wherein the mesa structure comprises:
an n region containing an n type dopant formed on the substrate;
an intermediate region positioned on the n region;
a p region formed on the intermediate region and containing a p type dopant, wherein the p region is a zinc diffused p region;
a connection mechanism formed on the top surface of the mesa and outside of the zinc diffused p region; and
a contact formed on a top surface of the mesa and attached to the p region,
wherein the contact has a line size of 5 μm and is formed around one-third of an outer perimeter of the mesa,
wherein the contact is formed of a plurality of sections,
wherein each of the plurality of sections is equal in size, a length of each of the plurality of sections is greater than a width of each of the plurality of sections,
wherein each of the plurality of sections is coupled together, and
wherein the mesa has a diameter of 30 μm or less.
12. The photodiode of claim 11 , comprising a connection mechanism coupling each of the plurality of sections together.
13. A photodiode comprising:
a substrate;
a mesa structure formed on the substrate and having a diameter of 30 μm or less, wherein the mesa structure comprises:
an n region containing an n type dopant formed on the substrate;
an intermediate region positioned on the n region;
a p region formed on the intermediate region and containing a p type dopant, wherein the p region is a zinc diffused p region;
a connection mechanism is formed on the top surface of the mesa and outside of the zinc diffused p region; and
a contact formed on a top surface of the mesa and attached to the p region,
wherein the contact has a line size of 5 μm and is formed around one-third of an outer perimeter of the mesa, and
wherein the contact is formed of three sections, each of the three sections being equal in size, the three sections being equally spaced around the outer perimeter, each of the three sections covering one-ninth of the outer perimeter.
14. The photodiode of claim 13 , comprising a connection mechanism coupling each of the three sections together.