Transversely excited film bulk acoustic resonator using rotated Y-X cut lithium niobate
Acoustic resonator devices, filters, and methods are disclosed. An acoustic resonator includes a substrate and a lithium niobate (LN) plate having front and back surfaces. The back surface is attached to a surface of the substrate except for a portion of the LN plate forming a diaphragm that spans a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface of the LN plate such that interleaved fingers of the IDT are disposed on the diaphragm. The LN plate and the IDT are configured such that a radio frequency signal applied to the IDT excites a shear primary acoustic wave in the diaphragm. The Euler angles of the LN plate are [0°, β, 0° ], where β is greater than or equal to 0° and less than or equal to 60°.
1. An acoustic resonator device comprising:
a substrate having a surface;
a lithium niobate plate having front and back surfaces, the back surface attached to the surface of the substrate except for a portion of the lithium niobate plate forming a diaphragm that spans a cavity in the substrate; and
an interdigital transducer (IDT) formed on the front surface of the lithium niobate plate such that interleaved fingers of the IDT are disposed on the diaphragm, wherein
the lithium niobate plate and the IDT are configured such that a radio frequency signal applied to the IDT excites a primary shear acoustic mode in the diaphragm, and
Euler angles of the lithium niobate plate are [0°, β, 0° ], where β is greater than or equal to 0° and less than or equal to 60°.
2. The device of claim 1 , wherein β is greater than or equal to 26° and less than or equal to 34°.
3. The device of claim 1 , wherein β is about 30°.
4. The device of claim 1 , wherein a direction of acoustic energy flow of the primary acoustic mode is substantially orthogonal to the front and back surfaces of the diaphragm.
5. The device of claim 1 , wherein a thickness between the front and back surfaces of the lithium niobate plate is greater than or equal to 200 nm and less than or equal to 1000 nm.
6. The device of claim 5 , wherein a pitch of the fingers of the IDT is greater than or equal to 2 times the thickness of the lithium niobate plate and less than or equal to 25 times the thickness of the lithium niobate.
7. The device of claim 6 , wherein
the fingers of the IDT have a width, and
the pitch is greater than or equal to 2 times the width and less than or equal to 25 times the width.
8. The device of claim 1 , further comprising:
a front-side dielectric layer formed on the front surface of the lithium niobate plate between the fingers of the IDT.
9. A filter device, comprising:
a substrate;
a lithium niobate plate having front and back surfaces, the back surface attached to the surface of the substrate, portions of the lithium niobate plate forming one or more diaphragms spanning respective cavities in the substrate; and
a conductor pattern formed on the front surface, the conductor pattern including a plurality of interdigital transducers (IDTs) of a respective plurality of acoustic resonators, interleaved fingers of each of the plurality of IDTs disposed on the one or more diaphragms, wherein
the lithium niobate plate and all of the IDTs are configured such that respective radio frequency signals applied to the IDTs excite respective primary shear acoustic modes in the respective diaphragms, and
the Euler angles of the lithium niobate plate are [0°, β, 0° ], where β is greater than or equal to 0° and less than or equal to 60°.
10. The filter device of claim 9 , wherein β is greater than or equal to 26° and less than or equal to 34°.
11. The filter device of claim 9 , wherein β is about 30°.
12. The filter device of claim 9 , wherein a direction of acoustic energy flow of all of the primary acoustic mode is substantially orthogonal to the front and back surfaces of the diaphragm.
13. The filter device of claim 9 , wherein a thickness between the front and back surfaces of the lithium niobate plate is greater than or equal to 200 nm and less than or equal to 1000 nm.
14. The filter device of claim 13 , wherein each of the plurality of IDTs has a respective pitch greater than or equal to 2 times the thickness of the lithium niobate plate and less than or equal to 25 times the thickness of the lithium niobate.
15. The filter device of claim 14 , wherein
the fingers of each of the plurality of IDTs have a respective width, and
for each of the plurality of IDTs, the respective pitch is greater than or equal to 2 times the respective width and less than or equal to 25 times the respective width.
16. The filter device of claim 9 , wherein each of the plurality of IDTs is disposed on a respective diaphragm spanning a respective cavity.
17. The filter device of claim 9 , wherein
the plurality of acoustic resonators includes a shunt resonator and a series resonator, and
a thickness of a first dielectric layer formed over the shunt resonator is greater than a thickness of a second dielectric layer formed over the series resonator.
18. A method of fabricating an acoustic resonator device, comprising:
bonding a lithium niobate plate to a substrate such that a portion of the lithium niobate plate forms a diaphragm spanning a cavity in the substrate; and
forming an interdigital transducer (IDT) on the front surface of the lithium niobate plate such that interleaved fingers of the IDT are disposed on the diaphragm, wherein
the lithium niobate plate and the IDT are configured such that a radio frequency signal applied to the IDT excites a primary shear acoustic mode in the diaphragm, and
the Euler angles of the lithium niobate plate are [0°, β, 0° ], where β is greater than or equal to 0° and less than 60°.
19. The method of claim 18 , wherein β is greater than or equal to 26° and less than or equal to 34°.
20. The method of claim 18 , wherein β is about 30°.
21. The method of claim 18 , wherein a direction of acoustic energy flow of the primary acoustic mode is substantially orthogonal to the front and back surfaces of the diaphragm.
22. The method of claim 18 , wherein a thickness between the front and back surfaces of the lithium niobate plate is greater than or equal to 200 nm and less than or equal to 1000 nm.
23. The method of claim 22 , wherein a pitch of the fingers of the IDT is greater than or equal to 2 times the thickness of the lithium niobate plate and less than or equal to 25 times the thickness of the lithium niobate.
24. The method of claim 23 , wherein
the fingers of the IDT have a width, and
the pitch is greater than or equal to 2 times the width and less than or equal to 25 times the width.
25. The method of claim 18 , further comprising:
forming a front-side dielectric layer on the front surface of the lithium niobate plate between the fingers of the IDT.