Light emitting device with reflective sidewall
Embodiments of the invention include a semiconductor light emitting device including a semiconductor structure. The semiconductor structure includes a light emitting layer disposed between an n-type region and a p-type region. A wavelength converting structure is disposed in a path of light emitted by the light emitting layer. A diffuse reflector is disposed along a sidewall of the semiconductor light emitting device and the wavelength converting structure. The diffuse reflector includes a pigment. A reflective layer is disposed between the diffuse reflector and the semiconductor structure. The reflective layer is a different material from the diffuse reflector.
1. A device comprising:
a light emitting semiconductor structure;
a wavelength converting structure disposed on a top surface of the light emitting semiconductor structure;
a light blocking structure disposed along a sidewall of the light emitting semiconductor structure and the wavelength converting structure, the light blocking structure being a diffuse reflector; and
a reflective layer disposed between the light blocking structure and the semiconductor structure.
2. The device of claim 1 , wherein the reflective layer comprises alternating first and second insulating layers, the first insulating layers having a different index of refraction from the second insulating layers.
3. The device of claim 2 , wherein the diffuse reflector comprises reflective particles disposed in a transparent matrix.
4. The device of claim 1 , wherein the the reflective layer comprises a different material from the light blocking structure.
5. The device of claim 1 , wherein the light blocking structure comprises a pigment and the reflective layer comprises an oxide layer.
6. The device of claim 1 , wherein the light blocking structure is a same color as an off-state color of the wavelength converting structure and the reflective layer comprises an oxide layer.
7. The device of claim 1 , wherein the reflective layer comprises a nitride.
8. The device of claim 1 , wherein the reflective layer comprises a single layer.
9. The device of claim 1 , wherein the reflective layer comprises a metal layer.
10. The device of claim 9 , wherein the reflective layer comprises multiple layers including the metal layer and including at least one dielectric layer.
11. The device of claim 1 , wherein the reflective layer comprises multiple layers of insulating material.
12. The device of claim 1 , wherein the reflective layer comprises a porous material that is one of porous metal-oxide or porous glass.
13. The device of claim 1 , wherein the wavelength converting structure is wider in a direction parallel to the top surface than the light emitting semiconductor structure.
14. The device of claim 13 , wherein the reflective layer is not disposed between the wavelength converting structure and the light blocking structure.
15. The device of claim 1 , wherein the reflective layer is disposed between the wavelength converting structure and the light blocking structure.
16. The device of claim 1 , wherein a thickness of the reflective layer is from 1 micron to 50 microns.
17. The device of claim 1 , wherein a first light emitting device comprises the light emitting semiconductor structure, the wavelength converting structure, and the reflective layer, and a second light emitting device, and a second light emitting device disposed to be adjacent to the first light emitting device comprises a second light emitting semiconductor structure, a second wavelength converting structure, and a second reflective layer,
wherein the light blocking structure includes a portion disposed between the first light emitting device and the second light emitting device, and
wherein the wavelength converting structure of the first light emitting device has a different off-state color from the second wavelength converting structure of the second light emitting device.
18. The device of claim 17 , wherein the light blocking structure has a same color as an off-state color of the wavelength converting structure, and a different color as an off-state color of the second wavelength converting structure, and
wherein the second light emitting device includes a third wavelength converting structure disposed on the second wavelength converting structure that has a same color as an off-state color of the wavelength converting structure and as the light blocking structure.
19. A device comprising:
a light emitting semiconductor structure;
a wavelength converting structure disposed on a top surface of the light emitting semiconductor structure;
a light blocking structure disposed along a sidewall of the light emitting semiconductor structure and the wavelength converting structure and comprising a pigment the light blocking structure being a diffuse reflector; and
a reflective layer disposed between the light blocking structure and the semiconductor structure and comprising a different material from the light blocking structure.
20. A device comprising:
a light emitting semiconductor structure;
a wavelength converting structure disposed on a top surface of the light emitting semiconductor structure;
a light blocking structure disposed along a sidewall of the light emitting semiconductor structure and the wavelength converting structure and being a same color as an off-state color of the wavelength converting structure; and
a reflective layer disposed between the light blocking structure and the semiconductor structure and comprising a different material from the light blocking structure.