IP Library Granted Patent US 11,697,275
Granted Patent B2
US 11,697,275 · App. 16/786,900 · Granted Jul 11, 2023

Tungsten oxide nanostructure thin films for electrochromic devices

Inventors: John H. Roudebush (Hayward, CA); Lina Zhu (Hayward, CA); Daniel Giaquinta (Hayward, CA); Hugues Duncan (Hayward, CA); Howard Turner (Hayward, CA)
Assignee: Halio, Inc.
B32B27/16B05D1/265B32B5/16B32B9/005B32B9/045B32B23/12B32B27/14B32B27/281B32B27/285B32B27/286B32B27/306B32B27/308B32B27/32B32B27/36B32B27/365B32B27/40C01G41/02C03C17/3417G02F1/153G02F1/1524B32B2250/05B32B2250/40B32B2255/10B32B2255/20B32B2255/205B32B2264/102B32B2307/20B32B2307/40B32B2307/402B32B2307/412B32B2551/08B32B2605/006G02F1/155G02F2202/36
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Quick Facts
Patent No.
US 11,697,275
App. No.
16/786,900
Granted
Jul 11, 2023
Kind
B2
Abstract

A method of manufacturing a thin film is provided. The method includes providing a plurality of crystalline hexagonal tungsten trioxide particles, size-reducing the crystalline hexagonal tungsten trioxide particles by grinding to produce crystalline hexagonal tungsten trioxide nanostructures, and coating the crystalline hexagonal tungsten trioxide nanostructures onto a substrate to produce a thin film. An electrochromic multi-layer stack is also provided.

Claims (23)

1. A method of manufacturing a thin film comprising:

providing a plurality of crystalline pyrochlore tungsten oxide particles;

size-reducing the crystalline pyrochlore tungsten oxide particles by grinding to produce crystalline pyrochlore tungsten oxide nanostructures; and

coating the crystalline pyrochlore tungsten oxide nanostructures onto a substrate to produce a thin film.

2. The method of claim 1 , wherein the crystalline pyrochlore tungsten oxide particles are produced via hydrothermal synthesis.

3. The method of claim 1 , wherein the thin film does not comprise a binder material.

4. The method of claim 1 , wherein the substrate comprises a material with a softening point less than 600° C.

5. The method of claim 1 , wherein the substrate comprises a material with a softening point less than 300° C.

6. The method of claim 1 , wherein the thin film is a layer in an electrochromic device.

7. The method of claim 1 , wherein the thin film is an electrochromic cathode layer in an electrochromic device.

8. The method of claim 1 , wherein the substrate comprises: an electrically conductive layer, and an outer substrate.

9. The method of claim 8 , wherein the electrically conductive layer is selected from a group consisting of: transparent conductive oxides, thin metallic coatings, networks of conductive nanoparticles conductive metal nitrides, and composite conductors.

10. The method of claim 8 , wherein the outer substrate is selected from a group consisting of: glass and plastic.

11. An electrochromic multi-layer stack comprising:

a thin film comprising crystalline pyrochlore tungsten oxide nanostructures;

an electrically conductive layer; and

an outer substrate,

wherein the thin film does not comprise a binder and wherein the thin film is an electrochromic cathode layer in an electrochromic device.

12. The electrochromic multi-layer stack of claim 11 , wherein the crystalline pyrochlore tungsten oxide nanostructures are produced via hydrothermal synthesis followed by size reduction via grinding.

13. The electrochromic multi-layer stack of claim 11 , wherein the transparent substrate comprises a material with a softening point less than 600° C.

14. The electrochromic multi-layer stack of claim 11 , wherein the multi-layer stack is incorporated into an electrochromic device.

15. The electrochromic multi-layer stack of claim 11 , wherein the electrically conductive layer is selected from the group consisting of: transparent conductive oxides, thin metallic coatings, networks of conductive nanoparticles conductive metal nitrides, and composite conductors.

16. The electrochromic multi-layer stack of claim 11 , wherein the outer substrate is selected from the group consisting of: glass and plastic.

Assignments (12)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 6, 2025
From: HALIO , LLC
To: SMART WINDOW INC., LIMITED
Reel/Frame 070438/0392 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 5, 2025
From: HALIO, INC.
To: HALIO, LLC
Reel/Frame 070404/0027 →
INTELLECTUAL PROPERTY SECURITY AGREEMENT Recorded Jun 18, 2024
From: HALIO, INC.
To: SKC CO., LTD., AS AGENT
Reel/Frame 067774/0328 →
SECURITY INTEREST Recorded Nov 17, 2023
From: HALIO, INC.
To: SKC CO., LTD., AS AGENT
Reel/Frame 065612/0158 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 10, 2023
From: ROUDENBUSH, JOHN H.; ZHU, LINA; GIAQUINTA, DANIEL; DUNCAN, HUGUES; TURNER, HOWARD W.
To: HALIO, INC.
Reel/Frame 065526/0355 →
RELEASE OF SECURITY INTEREST Recorded Oct 27, 2023
From: SK INC. (FORMERLY KNOWN AS SK HOLDINGS CO., LTD.)
To: HALIO, INC. (FORMERLY KNOWN AS KINESTRAL TECHNOLOGIES, INC.)
Reel/Frame 065383/0200 →
RELEASE OF SECURITY INTEREST Recorded Oct 27, 2023
From: SK INC.
To: HALIO, INC.
Reel/Frame 065382/0722 →
SECURITY INTEREST Recorded Sep 29, 2023
From: HALIO, INC.
To: PLUTUS CAPITAL NY, INC.
Reel/Frame 065084/0633 →
SECURITY INTEREST Recorded Aug 29, 2023
From: HALIO, INC.
To: PLUTUS CAPITAL NY, INC.
Reel/Frame 064753/0657 →
SECURITY INTEREST Recorded Nov 10, 2021
From: HALIO, INC.
To: SK INC.
Reel/Frame 058084/0947 →
CHANGE OF NAME Recorded Apr 1, 2021
From: KINESTRAL TECHNOLOGIES, INC.
To: HALIO, INC.
Reel/Frame 056031/0001 →
SECURITY INTEREST Recorded Jul 10, 2020
From: KINESTRAL TECHNOLOGIES, INC.
To: SK HOLDINGS CO., LTD.
Reel/Frame 053180/0686 →