Semiconductor device, manufacturing method thereof, display device, and electronic device
The field-effect mobility and reliability of a transistor including an oxide semiconductor film are improved. Provided is a semiconductor device including an oxide semiconductor film. The semiconductor device includes a first insulating film, an oxide semiconductor film over the first insulating film, a second insulating film and a third insulating film over the oxide semiconductor film, and a gate electrode over the second insulating film. The second insulating film comprises a silicon oxynitride film. When excess oxygen is added to the second insulating film by oxygen plasma treatment, oxygen can be efficiently supplied to the oxide semiconductor film.
1. A manufacturing method of a semiconductor device comprising the steps of:
forming a first oxide semiconductor film over a substrate;
forming a gate insulating layer over the first oxide semiconductor film using a plasma CVD apparatus, the gate insulating layer comprising silicon, nitrogen, and oxygen;
performing a plasma treatment in an atmosphere comprising oxygen using the plasma CVD apparatus after forming the gate insulating layer; and
forming a gate electrode on the gate insulating layer after performing the plasma treatment.
2. The manufacturing method of a semiconductor device according to claim 1 , further comprising the step of performing a heat treatment at a temperature higher than or equal to 150° C. and lower than or equal to 450° C. after forming the gate electrode.
3. The manufacturing method of a semiconductor device according to claim 1 , wherein the first oxide semiconductor film comprises indium, gallium, and zinc.
4. The manufacturing method of a semiconductor device according to claim 1 , wherein the gate insulating layer is formed at a substrate temperature lower than or equal to 350° C.
5. The manufacturing method of a semiconductor device according to claim 1 , wherein the plasma treatment is performed at a substrate temperature lower than or equal to 350° C.
6. The manufacturing method of a semiconductor device according to claim 1 , wherein the gate electrode is formed using a sputtering apparatus.
7. The manufacturing method of a semiconductor device according to claim 1 , wherein the gate electrode comprises a second oxide semiconductor film.
8. The manufacturing method of a semiconductor device according to claim 7 , wherein the second oxide semiconductor film comprises indium, gallium, and zinc.
9. A manufacturing method of a semiconductor device comprising the steps of:
forming a first oxide semiconductor film over a substrate;
forming a gate insulating layer over the first oxide semiconductor film using a plasma CVD apparatus, the gate insulating layer comprising silicon, nitrogen, and oxygen;
performing a plasma treatment in an atmosphere comprising oxygen using the plasma CVD apparatus after forming the gate insulating layer;
forming a second oxide semiconductor film on the gate insulating layer in an atmosphere comprising oxygen by sputtering after performing the plasma treatment; and
forming a gate electrode by etching the second oxide semiconductor film.
10. The manufacturing method of a semiconductor device according to claim 9 , further comprising the step of performing a heat treatment at a temperature higher than or equal to 150° C. and lower than or equal to 450° C. after forming the gate electrode.
11. The manufacturing method of a semiconductor device according to claim 9 , wherein the first oxide semiconductor film comprises indium, gallium, and zinc.
12. The manufacturing method of a semiconductor device according to claim 9 , wherein the gate insulating layer is formed at a substrate temperature lower than or equal to 350° C.
13. The manufacturing method of a semiconductor device according to claim 9 , wherein the plasma treatment is performed at a substrate temperature lower than or equal to 350° C.
14. The manufacturing method of a semiconductor device according to claim 9 , wherein the second oxide semiconductor film comprises indium, gallium, and zinc.
15. A manufacturing method of a semiconductor device comprising the steps of:
forming a first gate electrode over a substrate;
forming a first gate insulating layer over the first gate electrode;
forming a first oxide semiconductor film over the first gate insulating layer;
forming a second gate insulating layer over the first oxide semiconductor film using a plasma CVD apparatus, the second gate insulating layer comprising silicon, oxygen, and nitrogen;
performing a plasma treatment in an atmosphere comprising oxygen using the plasma CVD apparatus after forming the second gate insulating layer; and
forming a second gate electrode on the second gate insulating layer after performing the plasma treatment.
16. The manufacturing method of a semiconductor device according to claim 15 , further comprising the step of performing a heat treatment at a temperature higher than or equal to 150° C. and lower than or equal to 450° C. after forming the second gate electrode.
17. The manufacturing method of a semiconductor device according to claim 15 , wherein the first oxide semiconductor film comprises indium, gallium, and zinc.
18. The manufacturing method of a semiconductor device according to claim 15 , wherein the second gate insulating layer is formed at a substrate temperature lower than or equal to 350° C.
19. The manufacturing method of a semiconductor device according to claim 15 , wherein the plasma treatment is performed at a substrate temperature lower than or equal to 350° C.
20. The manufacturing method of a semiconductor device according to claim 15 , wherein the second gate electrode is formed using a sputtering apparatus.
21. The manufacturing method of a semiconductor device according to claim 15 , wherein the second gate electrode comprises a second oxide semiconductor film.
22. The manufacturing method of a semiconductor device according to claim 21 , wherein the second oxide semiconductor film comprises indium, gallium, and zinc.