Light emitting device

1. A light emitting device comprising:

a semiconductor light source device including a plurality of semiconductor light emitting elements;

a wavelength conversion member that converts a wavelength of irradiation light from the semiconductor light source device;

a concentrating lens that is disposed between the semiconductor light source device and the wavelength conversion member, and concentrates the irradiation light from the semiconductor light source device; and

a cylindrical holder,

wherein each of the semiconductor light source device, the wavelength conversion member, and the concentrating lens is supported by the corresponding support portion provided in an inner diameter portion of the cylindrical holder,

the holder is divided into an upper holder and a lower holder in a random position between the support portion supporting the wavelength conversion member and the support portion supporting the concentrating lens, and

the wavelength conversion member is provided on a lower surface of the support portion supporting the wavelength conversion member.

2. The light emitting device according to claim 1 ,

wherein the wavelength conversion member is divided into a plurality of regions as seen from an emission direction, and each region contains one or more phosphors.

3. The light emitting device according to claim 1 ,

wherein the wavelength conversion member has a plurality of layers laminated in a cross-sectional view.

4. The light emitting device according to claim 1 ,

wherein the wavelength conversion member has a light-transmitting region.

5. The light emitting device according to claim 1 ,

wherein the wavelength conversion member has a wavelength selective light-reflecting region.

6. The light emitting device according to claim 1 ,

wherein the wavelength conversion member has a wavelength-selective light-absorbing region.

7. The light emitting device according to claim 1 ,

wherein the semiconductor light source device individually drives each of light outputs of the plurality of semiconductor light emitting elements.

8. The light emitting device according to claim 1 ,

wherein the semiconductor light source device is mounted on a plate formed from a member having a high thermal conductivity.

9. The light emitting device according to claim 8 ,

wherein the holder is formed from a member having a high thermal conductivity and is in contact with the plate.

10. The light emitting device according to claim 9 , further comprising:

a light-transmitting member that closes an emission opening of the holder.

11. The light emitting device according to claim 1 ,

wherein at least one of the plurality of semiconductor light emitting elements is an ultraviolet or blue semiconductor laser element having an emission peak wavelength in a range of 360 nm to 480 nm.

12. The light emitting device according to claim 1 ,

wherein the plurality of semiconductor light emitting elements includes an infrared semiconductor laser or a red semiconductor laser.

13. The light emitting device according to claim 1 , wherein the wavelength conversion member is a blue phosphor, a green phosphor, a yellow phosphor, or a red phosphor, and includes at least one phosphor selected from Ce-activated Ln 3 (Al 1-x GA x ) 5 O 12 , wherein Ln is selected from at least one of Y, La, Gd, and Lu, and Ce substitutes for Ln, Eu, Ce-activated Ca 3 (Sc x Mg 1-x ) 2 Si 3 O 12 , wherein Ce substitutes for Ca, Eu-activated (Sr 1-x Ca x ) AlSiN 3 , wherein Eu substitutes for Sr and Ca, Ce-activated (La 1-x Y x ) 3 Si 6 N 11 , wherein Ce substitutes for La and Y, Ce-activated Ca-α-Sialon, Eu-activated β-Sialon, and Eu-activated M 2 Si 5 N 8 , wherein M is selected from at least one of Ca, Sr, and Ba, and Eu substitutes for M, x represents a rate of a number of each element assuming that a total number of elements is 1, and 0<x<1.