Integrated transformer with low AC losses and impedance balanced interface
An integrated transformer device is provided with both inductive and transformer elements. The inductive and transformer elements are combined within the same device, sharing at least a part of the same magnetic and electrical paths. The integrated transformer device comprises a top core, a bottom core, and a shunt core. A high voltage winding is wound around the bottom core. A low voltage winding is wound around the bottom core and the shunt core. Power semiconductor devices, connected in parallel, form a portion of the low voltage winding and are disposed at a location proximate to the high voltage winding.
1. A transformer device comprising:
a core having a top core, a bottom core, and a shunt core, the top core disposed above and mated to the bottom core, and the bottom core mated to the shunt core;
a high voltage winding interposed between the top core and the bottom core and between the bottom core and the shunt core, the high voltage winding wrapping around the bottom core;
a low voltage winding interposed between the top core and the bottom core, the low voltage winding encircling the bottom core, the high voltage winding, and the shunt core;
a first low voltage winding terminal and a second low voltage winding terminal,
a circuit board on which the first and second low voltage winding terminals are provided, the first and second low voltage winding terminals connected the low voltage winding to complete a turn of the encircling low voltage winding, the circuit board disposed below the bottom core and proximate to the high voltage winding; and
a plurality of power semiconductor devices mounted on the circuit board and connected to the first and second low voltage winding terminals.
2. The transformer device of claim 1 , wherein the first and second low voltage winding terminals have a length and a width, each length being significantly longer than the associated width.
3. The transformer device of claim 2 , wherein the power semiconductor devices are arranged in two rows, at approximately equidistant spacing within each row, between the first and second low voltage winding terminals on the circuit board.
4. The transformer device of claim 3 , wherein each power semiconductor device row extends to a length that is 75% to 125% of a width of the low voltage winding.
5. The transformer device of claim 4 , where the power semiconductor devices mounted on the circuit board are disposed proximate to the high voltage winding.
6. The transformer device of claim 5 , wherein the power semiconductor devices are disposed proximate to the high voltage winding at a distance of 0 to 0.25 times a width of the high voltage winding.
7. The transformer device of claim 6 , wherein the power semiconductor devices are connected in a parallel configuration to the first and second low voltage winding terminals.
8. The transformer device of claim 1 , wherein the circuit board is a printed wiring board or a direct copper bonded substrate.
9. The transformer device of claim 3 , wherein the power semiconductor devices are disposed on a top side of the circuit board so as to face toward the transformer core.
10. The transformer device of claim 3 , wherein the power semiconductor devices are disposed on an underside of the circuit board so as to face away from the transformer core.
11. The transformer device of claim 7 , wherein the connected power semiconductor devices are configured to form a rectifying circuit.
12. The transformer device of claim 7 , wherein the connected power semiconductor devices are configured to form a driving circuit.
13. The transformer device of claim 1 , further comprising a transformer holder that maintains the relative positioning of the windings and cores.
14. The transformer device of claim 1 , the shunt core comprising multiple core segments that are spaced apart from one another by at least one gap.
15. The transformer device of claim 1 , the shunt core comprising a single core segment composed of a low permeability magnetic material, such as a powdered metal material.
16. The transformer device of claim 1 , wherein the low voltage winding has a multi-part construction that removably connects the transformer device to the circuit board or substrate.
17. A method of distributing current among a plurality of power semiconductor devices connected to the low voltage winding of a transformer, comprising the steps of:
providing a transformer device having a magnetic core, a low voltage winding, and a high voltage winding;
mounting the power semiconductor devices on a circuit board provided with a pair of opposing elongated terminals, the power semiconductor devices arranged in two rows, at approximately equidistant spacing within each row, between the elongated terminals;
connecting the power semiconductors to the elongated terminals;
connecting the elongated terminals to the low voltage winding such that the power semiconductors complete a turn of the low voltage winding; and
positioning the semiconductor devices in proximity to the high voltage winding.
18. The method of claim 17 , further comprising the step of:
winding the high voltage winding to a width that is between 75% and 125% of a width of the low voltage winding.