Method of manufacturing light emitting device, light emitting device, and base member
A method of manufacturing a light emitting device, the method including: disposing a first semiconductor laser element on a disposition surface of a base member such that a light emission end surface of the first semiconductor laser element is parallel to a first line passing through a pair of alignment marks provided on the base member; and disposing a first light-reflective member on the disposition surface such that a reference line for the first light-reflective member, which serves as an alignment reference in disposing the first light-reflective member, is parallel to a second line that is oblique to the first line at a predetermined angle.
1. A method of manufacturing a light emitting device, the method comprising:
disposing a first semiconductor laser element on a disposition surface of a base member such that a light emission end surface of the first semiconductor laser element is parallel to a first line passing through a pair of alignment marks provided on the base member;
disposing a first light-reflective member on the disposition surface such that a reference line for the first light-reflective member, which serves as an alignment reference in disposing the first light-reflective member, is parallel to a second line that is oblique to the first line at a predetermined angle
disposing a second semiconductor laser element on the disposition surface such that a light emission end surface of the second semiconductor laser element is parallel to the first line, and such that the first semiconductor laser element and the second semiconductor laser element are disposed symmetrically to each other with reference to a midpoint of the first line between the alignment marks; and
disposing a second light-reflective member on the disposition surface such that a reference line for the second light-reflective member is parallel to the second line, and such that the first light-reflective member and the second light-reflective member are disposed symmetrically to each other with reference to the midpoint of the first line.
2. The manufacturing method according to claim 1 , wherein the predetermined angle is in a range of 10 degrees to 80 degrees.
3. The manufacturing method according to claim 1 , further comprising
disposing a wavelength conversion member including a wavelength conversion part and a surrounding part surrounding lateral surfaces of the wavelength conversion part, the wavelength conversion member being disposed above the first semiconductor laser element and the second semiconductor laser element such that the midpoint of the first line overlaps the wavelength conversion part in a top view.
4. The manufacturing method according to claim 1 , wherein the disposing of the first semiconductor laser element on the disposition surface is performed after the disposing of the first light-reflective member on the disposition surface.
5. The manufacturing method according to claim 1 , wherein the disposing of the first light-reflective member includes disposing the first light-reflective member by using a straight line passing through a side corresponding an upper edge or lower edge of a light-reflective surface of the first light-reflective member as the reference line.
6. A light emitting device comprising:
a base member including a disposition surface, and including a pair of alignment marks;
a first semiconductor laser element disposed on the disposition surface;
a second semiconductor laser element disposed on the disposition surface;
a first light-reflective member disposed on the disposition surface; and
a second light-reflective member disposed on the disposition surface, wherein
the first semiconductor laser element and the first light-reflective member are disposed on the disposition surface such that a light emission end surface of the first semiconductor laser element and an upper edge or a lower edge of a light-reflective surface of the first light-reflective member form a predetermined angle without being perpendicular or parallel to each other in a top view,
the second semiconductor laser element and the second light-reflective member are disposed on the disposition surface such that a light emission end surface of the second semiconductor laser element and an upper edge or a lower edge of a light-reflective surface of the second light-reflective member form the predetermined angle in the top view,
a line connecting the alignment marks extends parallel to the light emission end surface of the first semiconductor laser element and the light emission end surface of the second semiconductor laser element,
the first semiconductor laser element and the second semiconductor laser element are disposed symmetrically to each other with reference to a midpoint of the line, and
the first light-reflective member and the second light-reflective member are disposed symmetrically to each other with reference to the midpoint.
7. The light emitting device according to claim 6 , wherein the predetermined angle is in a range of 10 degrees to 80 degrees.
8. The light emitting device according to claim 6 , further comprising
a wavelength conversion member including a wavelength conversion part and a surrounding part surrounding lateral surfaces of the wavelength conversion part, the wavelength conversion member being disposed above the first semiconductor laser element and the second semiconductor laser element such that the midpoint overlaps the wavelength conversion part in the top view.
9. The light emitting device according to claim 6 , wherein
the base member including
an upward-facing surface,
an upper surface surrounding the upward-facing surface to form a rectangular frame in the top view, the rectangular frame having four sides including a first side, a second side intersecting with the first side, a third side opposite to the first side and intersecting with the second side, and a fourth side intersecting with the third side and the first side in the top view,
a first metal film extending from a region corresponding to the first side to a region corresponding to the second side in the upper surface, and
a second metal film extending from a region corresponding to the third side to a region corresponding to the fourth side, wherein
the first metal film includes
a first conduction region configured to establish electrical connection in the region corresponding to the first side, and
a first alignment region defining one of the pair of alignment marks in the region corresponding to the second side, and
the second metal film includes
a second conduction region configured to establish electrical connection in the region corresponding to the third side, and
a second alignment region defining the other one of the pair of alignment marks in the region corresponding to the fourth side.
10. The light emitting device according to claim 9 , wherein
the base member includes another pair of alignment marks provided on the disposition surface, and
the line connecting the pair of alignment marks and a line connecting the another pair of alignment marks are parallel to each other.
11. The light emitting device according to claim 6 , wherein
the pair of alignment marks are provided on the disposition surface.
12. A method of manufacturing a light emitting device, the method comprising:
disposing a first semiconductor laser element on a disposition surface of a base member such that a light emission end surface of the first semiconductor laser element is parallel to a first line passing through a pair of alignment marks provided on the base member; and
disposing a first light-reflective member on the disposition surface such that a reference line for the first light-reflective member, which serves as an alignment reference in disposing the first light-reflective member, is parallel to a second line that is oblique to the first line at a predetermined angle, wherein
the disposing of the first light-reflective member includes disposing the first light-reflective member by using a straight line passing through a side corresponding an upper edge or lower edge of a light-reflective surface of the first light-reflective member as the reference line.
13. The manufacturing method according to claim 12 , wherein the predetermined angle is in a range of 10 degrees to 80 degrees.
14. The manufacturing method according to claim 2 , further comprising
disposing a wavelength conversion member including a wavelength conversion part and a surrounding part surrounding lateral surfaces of the wavelength conversion part, the wavelength conversion member being disposed above the first semiconductor laser element and the second semiconductor laser element such that the midpoint of the first line overlaps the wavelength conversion part in a top view.
15. The manufacturing method according to claim 12 , wherein the disposing of the first semiconductor laser element on the disposition surface is performed after the disposing of the first light-reflective member on the disposition surface.