Single-step metal bond and contact formation for solar cells
View Patent ↗A method for fabricating a solar cell is disclosed. The method can include forming a dielectric region on a surface of a solar cell structure and forming a first metal layer on the dielectric region. The method can also include forming a second metal layer on the first metal layer and locally heating a particular region of the second metal layer, where heating includes forming a metal bond between the first and second metal layer and forming a contact between the first metal layer and the solar cell structure. The method can include forming an adhesive layer on the first metal layer and forming a second metal layer on the adhesive layer, where the adhesive layer mechanically couples the second metal layer to the first metal layer and allows for an electrical connection between the second metal layer to the first metal layer.
1. A solar cell, comprising:
a dielectric region disposed on a doped region of the solar cell;
a first metal layer disposed on the dielectric region, wherein the dielectric region is continuous between the first metal layer and the doped region; and
a contact in the dielectric region located directly beneath and in alignment with the first metal layer and above the dielectric region, wherein the contact electrically connects the first metal layer to the doped region.
2. The solar cell of claim 1 , wherein the contact comprises an ohmic contact.
3. The solar cell of claim 1 , wherein the first metal layer is a metal seed layer.
4. The solar cell of claim 1 , wherein the first metal layer comprises a metal selected from the group consisting of copper, tin, aluminum, silver, gold, chromium, iron, nickel, zinc, ruthenium, palladium, and platinum.
5. The solar cell of claim 1 , further comprising a metal foil on the first metal layer.
6. The solar cell of claim 5 , further comprising a localized metal bond between the first metal layer and the metal foil, the localized metal bond located directly above and in alignment with the contact.
7. The solar cell of claim 5 , wherein the metal foil comprises a metal selected from the group consisting of copper, tin, aluminum, silver, gold, chromium, iron, nickel, zinc, ruthenium, palladium, and platinum.
8. The solar cell of claim 5 , wherein the first metal layer and the metal foil have a same interdigitated pattern.
9. The solar cell of claim 1 , wherein the doped region comprises a N-type doped region or a P-type doped region.
10. The solar cell of claim 1 , wherein the dielectric region comprises a material selected from the group consisting of silicon nitride, silicon oxide, silicon oxynitride, aluminum oxide, amorphous silicon and polysilicon.
11. A solar cell, comprising:
a dielectric region disposed on a doped region of the solar cell, wherein the dielectric region comprises silicon nitride;
an aluminum layer disposed on the dielectric region, wherein the dielectric region is continuous between the aluminum layer and the doped region; and
a contact in the dielectric region located directly beneath and in alignment with the aluminum layer and above the dielectric region, wherein the contact electrically connects the aluminum layer to the doped region.
12. The solar cell of claim 11 , wherein the contact comprises an ohmic contact.
13. The solar cell of claim 11 , further comprising a metal foil on the aluminum layer.
14. The solar cell of claim 13 , further comprising a localized metal bond between the aluminum layer and the metal foil, the localized metal bond located directly above and in alignment with the contact.
15. The solar cell of claim 13 , wherein the metal foil comprises a metal selected from the group consisting of copper, tin, aluminum, silver, gold, chromium, iron, nickel, zinc, ruthenium, palladium, and platinum.
16. The solar cell of claim 13 , wherein the aluminum layer and the metal foil have a same interdigitated pattern.
17. A solar cell, comprising:
a dielectric region disposed on a doped region of the solar cell;
an aluminum layer disposed on the dielectric region, wherein the dielectric region is continuous between the aluminum layer and the doped region;
a contact in the dielectric region located directly beneath and in alignment with the aluminum layer and above the dielectric region, wherein the contact electrically connects the aluminum layer to the doped region;
an aluminum foil on the aluminum layer; and
a localized metal bond between the aluminum layer and the aluminum foil, the localized metal bond located directly above and in alignment with the contact.
18. The solar cell of claim 17 , wherein the contact comprises an ohmic contact.
19. The solar cell of claim 17 , wherein the dielectric region comprises a material selected from the group consisting of silicon nitride, silicon oxide, silicon oxynitride, aluminum oxide, amorphous silicon and polysilicon.
20. The solar cell of claim 17 , wherein the aluminum layer and the aluminum foil have a same interdigitated pattern.