Micro light-emitting diode and manufacturing method of micro light-emitting diode
A micro light-emitting diode includes a first micro light-emitting diode including a first light-emitting layer and emitting light at a first wavelength, and a second micro light-emitting diode including the first light-emitting layer and a second light-emitting layer emitting light at a second wavelength longer than the first wavelength, in which the second light-emitting layer is a nitride semiconductor layer doped with a second rare earth element, and a nitride semiconductor of the first micro light-emitting diode and the nitride semiconductor of the second micro light-emitting diode are separated from each other.
1. A micro light-emitting diode comprising:
a first micro light-emitting diode including a first light-emitting layer that emits light of a first wavelength; and
a second micro light-emitting diode including the first light-emitting layer and a second light-emitting layer that emits light of a second wavelength longer than the first wavelength,
wherein:
the first micro light-emitting diode and the second micro light-emitting diode are both made of a nitride semiconductor;
the second light-emitting layer is a nitride semiconductor layer doped with a first rare earth element; and
the nitride semiconductor of the first micro light-emitting diode and the nitride semiconductor of the second micro light-emitting diode are separated from each other;
wherein side walls of the first light-emitting layer and the second light-emitting layer are covered with a high-resistance nitride semiconductor layer.
2. A micro light-emitting diode comprising:
a first micro light-emitting diode including a first light-emitting layer that emits light of a first wavelength; and
a second micro light-emitting diode including the first light-emitting layer and a second light-emitting layer that emits light of a second wavelength longer than the first wavelength,
wherein:
the first micro light-emitting diode and the second micro light-emitting diode are both made of a nitride semiconductor;
the second light-emitting layer is a nitride semiconductor layer doped with a first rare earth element; and
the nitride semiconductor of the first micro light-emitting diode and the nitride semiconductor of the second micro light-emitting diode are separated from each other;
wherein the first light-emitting layer is a nitride semiconductor layer doped with a second rare earth element.
3. A micro light-emitting diode comprising:
a first micro light-emitting diode that includes a first light-emitting layer containing a first rare earth element and emits light at a first wavelength; and
a second micro light-emitting diode that includes a second light-emitting layer containing a second rare earth element and emits light at a second wavelength longer than the first wavelength,
wherein the first micro light-emitting diode and the second micro light-emitting diode are both made of a nitride semiconductor, and
the first light-emitting layer and the second light-emitting layer are both covered with an electrode layer in a plan view.
4. The micro light-emitting diode according to claim 3 , wherein the first light-emitting layer and the second light-emitting layer are spaced apart by a separation groove.
5. The micro light-emitting diode according to claim 4 , wherein a high-resistance nitride semiconductor layer is between the first light-emitting layer and a side wall of the separation groove and between the second light-emitting layer and a side wall of the separation groove.
6. The micro light-emitting diode according to claim 3 , further comprising:
a third micro light-emitting diode that includes a third light-emitting layer containing a third rare earth element and emits light at a third wavelength longer than the second wavelength,
wherein the third micro light-emitting diode is made of a nitride semiconductor, and the third light-emitting layer is covered with an electrode layer in a plan view.
7. A manufacturing method of a micro light-emitting diode comprising:
forming a nitride semiconductor layer including a first light-emitting layer that emits light of a first wavelength;
forming a second light-emitting layer by doping a first rare earth element, the second light-emitting layer emitting light of a second wavelength longer than the first wavelength; and
separating the nitride semiconductor layer into a first micro light-emitting diode that includes the first light-emitting layer and emits light at the first wavelength and a second micro light-emitting diode that includes the first light-emitting layer and the second light-emitting layer and emits light at the second wavelength.
8. A manufacturing method of a micro light-emitting diode comprising:
forming a first micro light-emitting diode that includes a first light-emitting layer containing a first rare earth element and emits light at a first wavelength, the first micro light-emitting diode formed with a nitride semiconductor;
forming a second micro light-emitting diode that includes a second light-emitting layer containing a second rare earth element and emits light at a second wavelength longer than the first wavelength, the second micro light-emitting diode formed with a nitride semiconductor; and
covering the first light-emitting layer and the second light-emitting layer with an electrode layer in a plan view.