Precise bondline control between LED components
Devices and techniques are disclosed herein which include a first LED device layer, a second LED device layer, and an adhesive bondline disposed between the first LED device layer and the second LED device layer. The adhesive bondline includes a bondline thickness, a plurality of spacers disposed within the adhesive bondline, and a silicone matrix. The plurality of spacers may have a diameter or a shortest axis between 0.5 and 10 micrometers and the coefficient of variation is 10% or less. The plurality of spacers may be include SiO 2 , alumina, soda lime glass, may be inorganic, or polymeric.
1. A device comprising:
a light emitting semiconductor structure having a first surface;
a wavelength converting phosphor layer having a second surface; and
an adhesive layer bonding the first surface to the second surface, the adhesive layer comprising:
a plurality of spacers dispersed in a silicone matrix, the spacers comprising an axis defining a thickness of the adhesive layer, the plurality of spacers having a size distribution with a coefficient of variation of the axis less than 5%.
2. The device of claim 1 , wherein the plurality of spacers comprise at least one of silica, alumina, inorganic glass, or polymer.
3. The device of claim 1 , wherein the axis is the shortest axis of at least one spacer.
4. The device of claim 1 , wherein the axis is oriented substantially perpendicular to the first and second surfaces.
5. The device of claim 1 , wherein the silicone matrix has a refractive index between 1.4 and 1.44.
6. The device of claim 1 , wherein the silicone matrix has a refractive index between 1.45 and 1.51.
7. The device of claim 1 , wherein the silicone matrix has a refractive index greater than 1.51.
8. The device of claim 1 , wherein each of the plurality of spacers are substantially spherical.
9. The device of claim 1 , wherein each of the spacers is rod shaped.
10. The device of claim 1 , wherein the plurality of spacers have a size distribution with a mean axis between 1 and 5 microns.
11. The device of claim 1 , wherein the adhesive layer comprises between approximately 100 to 5000 spacers per mm 2 .
12. The device of claim 1 , wherein a difference in height between the first and second surfaces at a first end of the wavelength converting phosphor layer and at a second end of the wavelength converting phosphor layer is less than 1 micrometers.
13. A method of forming a light emitting element comprising a light emitting semiconductor structure and a wavelength converting phosphor layer, the method comprising:
dispensing a liquid adhesive onto a surface of a first layer of a light emitting element, the liquid adhesive comprising a plurality of spacers dispersed in a silicone matrix, the plurality of spacers having an axis and a size distribution with a coefficient of variation of the axis less than 5%, the first layer comprising either the light emitting semiconductor structure or the wavelength converting phosphor layer; and
attaching a second layer of the light emitting device using the adhesive, the second layer comprising either the light emitting semiconductor structure or the wavelength converting phosphor layer, the axis of the spacers defining a distance between the first layer and the second layer of the light emitting element.
14. The method of claim 13 , wherein the first layer is the light emitting semiconductor structure and the second layer is the wavelength converting phosphor layer.
15. The method of claim 13 , wherein the first layer is the wavelength converting phosphor layer and the second layer is the light emitting semiconductor structure.
16. The method of claim 13 , wherein the plurality of spacers have a size distribution with a mean axis between 1 and 5 microns.
17. A method of forming a light emitting element comprising a light emitting semiconductor structure and a wavelength converting phosphor layer, the method comprising:
depositing a first plurality of spacers onto a surface of a first layer of a light emitting element, the first plurality of spacers having an axis and a size distribution with a coefficient of variation of the axis less than 5%;
dispensing a liquid adhesive in a space between the plurality of spacers, the first layer comprising either the light emitting semiconductor structure or the wavelength converting phosphor layer; and
attaching a second layer of the light emitting element, the second layer comprising either the light emitting semiconductor structure or the wavelength converting phosphor layer, the axis of the first plurality of spacers defining a distance between the first layer and the second layer of the light emitting device.
18. The method of claim 17 comprising before attaching the second layer, depositing a second plurality of spacers onto a surface of the second layer of the light emitting device, the second plurality of spacers having the same size distribution as the first plurality of spacers.
19. The method of claim 17 , wherein the liquid adhesive is deposited after the second layer is attached.
20. The method of claim 17 , wherein depositing the first plurality of spacers onto the surface of the first layer of the light emitting device comprises using at least one of photolithography, imprint lithography, jet printing, or aerosol jet printing.