Control and prognosis of power electronic devices using light
An optically-monitored and/or optically-controlled electronic device is described. The device includes at least one of a semiconductor transistor or a semiconductor diode. An optical detector is configured to detect light emitted by the at least one of the semiconductor transistor or the semiconductor diode during operation. A signal processor is configured to communicate with the optical detector to receive information regarding the light detected. The signal processor is further configured to provide information concerning at least one of an electrical current flowing in, a temperature of, or a condition of the at least one of the semiconductor transistor or the semiconductor diode during operation.
1. A method of determining a temperature and current of a semiconductor device, comprising:
determining light emitted by the semiconductor device as a function of temperature and current of the semiconductor device over a temperature and current range in a calibration process;
applying a voltage to said semiconductor device such that the semiconductor device is in operation and emits light;
detecting light emitted by the semiconductor device after the applying said voltage; and
determining the temperature and the current of the semiconductor device based on comparing light detected from said semiconductor device and the light determined in the calibration procedure,
wherein the calibration process comprises:
determining the intensity of light emitted by the semiconductor device at a plurality of separate emission peaks for each temperature and current of the semiconductor device over the temperature and current range, and
fitting the intensity over the temperature and current range to provide a calibration curve.
2. The method of claim 1 , wherein the plurality of separate emission peaks is two emission peaks.
3. The method of claim 1 , wherein the calibration process comprises band pass filtering the intensity of light emitted to allow the light of the separate emission peaks to pass.
4. The method of claim 1 , wherein the semiconductor device is one of a field effect transistor, a bipolar junction transistor, or an insulated gate bipolar transistor.
5. The method of claim 4 , wherein the semiconductor device is a GaN device.
6. The method of claim 4 , wherein the semiconductor device is a SiC device.
7. The method of claim 1 , wherein said detecting light emitted by the semiconductor device after the applying said voltage is further used to estimate a long-term degradation of the semiconductor device for prognostics and reliability improvement.
8. The method of claim 7 , further comprising injecting light into the semiconductor device and measuring reflected light to estimate a degradation of the semiconductor device for prognostics and reliability improvement.