IP Library Granted Patent US 11,105,830
Granted Patent B2
US 11,105,830 · App. 16/799,155 · Granted Aug 31, 2021

Voltage detector

Inventor: Teruo Suzuki (Chiba, JP)
Assignee: Ablic Inc.
G01R15/04G01R19/16504H03K5/2472
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Quick Facts
Patent No.
US 11,105,830
App. No.
16/799,155
Granted
Aug 31, 2021
Kind
B2
Abstract

A voltage detector includes a first voltage detection circuit, a second voltage detection circuit, and a voltage divider circuit having a first node for providing a first divided voltage, and a second node for providing a second divided voltage. The second voltage detection circuit has a comparator circuit including a first input end connected to the first node and a second input end connected to a reference voltage. The first voltage detection circuit has a first NMOS transistor including a gate to which the second divided voltage is applied, and a constant current source with one end connected to the first NMOS transistor. The first NMOS transistor is configured to turn on in response to the second divided voltage being higher than a second threshold voltage and turn off in response to the second divided voltage being lower than the second threshold voltage.

Claims (21)

1. A voltage detector, comprising:

a low-voltage detection circuit configured to detect a voltage lower than a first threshold voltage;

a high-voltage detection circuit configured to detect a voltage higher than a second threshold voltage; and

a voltage divider circuit configured to divide a monitoring voltage into a first divided voltage and a second divided voltage,

the voltage divider circuit having a first node configured to provide the first divided voltage and a second node configured to provide the second divided voltage,

one of the low-voltage detection circuit and the high-voltage detection circuit having a comparator circuit which includes a first input end connected to the first node and a second input end connected to a reference voltage, and

the other of the low-voltage detection circuit and the high-voltage detection circuit having a first NMOS transistor which includes a gate to which the second divided voltage is applied, and a constant current source with one end connected to the first NMOS transistor.

2. The voltage detector according to claim 1 , wherein:

the low-voltage detection circuit is configured to detect, through the comparator circuit, that the first divided voltage is lower than the first threshold voltage;

the high-voltage detection circuit is configured to detect, through the first NMOS transistor and the constant current source, that the second divided voltage is higher than the second threshold voltage;

the constant current source has one end connected to a drain of the first NMOS transistor and the other end connected to a power supply;

the high-voltage detection circuit further comprises a second NMOS transistor having a drain connected to a source of the first NMOS transistor, a source connected to a ground node, and a gate to which a voltage obtained by inverting an output from the comparator circuit is applied, and an output end set at the drain of the first NMOS transistor; and

the first NMOS transistor turns on in response to the second divided voltage being higher than the second threshold voltage and turns off in response to the second divided voltage being lower than the second threshold voltage.

3. The voltage detector according to claim 1 , wherein:

the high-voltage detection circuit is configured to detect, through the comparator circuit, that the first divided voltage is higher than the first threshold voltage;

the low-voltage detection circuit is configured to detect, through the first NMOS transistor and the constant current source, that the second divided voltage is lower than the second threshold voltage;

the other end of the constant current source is connected to a ground node;

the first NMOS transistor has a drain connected to a power supply through a resistor, a source connected to the one end of the constant current source, and the gate connected to the second node, and is configured to turn off in response to the second divided voltage being lower than the second threshold voltage, and turn on in response to the second divided voltage being higher than the second threshold voltage; and

the low-voltage detection circuit further has an output end set at the drain of the first NMOS transistor.

4. The voltage detector according to claim 3 , further comprising:

a PMOS transistor connected between the power supply and the resistor, and having a source connected to the power supply, a drain connected to the drain of the first NMOS transistor through the resistor, and a gate to which a voltage obtained by inverting an output from the comparator circuit is applied.

Assignments (2)
CHANGE OF ADDRESS Recorded Jun 8, 2023
From: ABLIC INC.
To: ABLIC INC.
Reel/Frame 064021/0575 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 25, 2020
From: SUZUKI, TERUO
To: ABLIC INC.
Reel/Frame 051913/0883 →