Semiconductor device
A semiconductor device includes a semiconductor substrate having a surface perpendicular to the first direction; a vertical Hall element formed in the semiconductor substrate, and including a magnetosensitive portion having a depth in the first direction, a width in the second direction, and a length in the third direction; and an excitation wiring extending in the third direction and disposed above the semiconductor substrate and at a position that overlaps the center position of the width of the magnetosensitive portion, and the value u derived from Expression (1) is 0.6 or more: u = tan - 1 ( W + Wc 2 h ) - tan - 1 ( W - Wc 2 h ) 2 tan - 1 ( Wc 2 h ) ( 1 ) where W is the width of the magnetosensitive portion, Wc/2 is a distance from the center position of the width of the magnetosensitive portion to the first end surface closer thereto, and h is a distance from the center position of the depth of the magnetosensitive portion to the excitation wiring.
1. A semiconductor device comprising:
a semiconductor substrate having a surface perpendicular to a first direction;
a vertical Hall element formed in the semiconductor substrate, and including a magneto sensitive portion having a depth in the first direction, a width in a second direction perpendicular to the first direction, and a length in a third direction perpendicular to both of the first direction and the second direction; and
an excitation wiring having a first end surface and a second end surface in the second direction, and extending in the third direction,
wherein the excitation wiring is disposed on a surface side of the semiconductor substrate and at a position that is apart from the magnetosensitive portion, and overlaps a center position of the width of the magnetosensitive portion as viewed in plan view from the first direction,
wherein at the position at which the excitation wiring is disposed, a distance from the center position of the width of the magnetosensitive portion to the first end surface is equal to or smaller than a distance from the center position of the width of the magnetosensitive portion to the second end surface as viewed in the plan view, and
wherein a value “u” derived from Expression (1) below is 0.6 or more:
u
=
tan
-
1
(
W
+
Wc
2
h
)
-
tan
-
1
(
W
-
Wc
2
h
)
2
tan
-
1
(
Wc
2
h
)
(
1
)
where W is the width of the magnetosensitive portion, Wc/2 is the distance from the center position of the width of the magnetosensitive portion to the first end surface as viewed in the plan view, and h is a distance from a center position of the depth of the magnetosensitive portion to the excitation wiring.
2. The semiconductor device according to claim 1 , wherein the excitation wiring covers the magnetosensitive portion as viewed in the plan view.
3. The semiconductor device according to claim 2 , wherein the excitation wiring is disposed at a position at which a center position of the excitation wiring in the second direction overlaps a center position of the magneto sensitive portion in the second direction as viewed in the plan view.
4. The semiconductor device according to claim 1 , wherein the excitation wiring is disposed at a position at which a center position of the excitation wiring in the second direction overlaps a center position of the magneto sensitive portion in the second direction as viewed in the plan view.