Read threshold optimization systems and methods by multi-dimensional search
A memory controller optimizes read threshold values for a memory device using multi-dimensional search. The controller performs a read operation on cells using a pair of default read threshold values on a multi-dimensional plane. When the read operation has failed, the controller determines program states of cells and a pair of next read threshold values based on the program states and performs an additional read operation using the next read threshold values.
1. A memory system comprising:
a memory device including a plurality of cells; and
a controller, coupled to the memory device, suitable for:
determining default read thresholds on a 2-dimensional plane, the default read thresholds including a pair of first and second default read thresholds;
controlling the memory device to perform a read operation on the plurality of cells using the default read threshold values;
determining, based on the read operation, a first number of cells, among the plurality of cells, in a first state corresponding to the first default read threshold and a second number of cells, among the plurality of cells, in a second state corresponding to the second default read threshold;
comparing the first and second numbers of cells with first and second target cell numbers, respectively;
determining next read thresholds based on the comparing result; and
controlling the memory device to perform an additional read operation using the next read thresholds,
wherein the next read thresholds include a pair of first and second next read thresholds,
wherein the first next read threshold is determined based on a direction and a step size from the first default read threshold, which are determined based on a first difference between the first number of cells and the first target cell number,
wherein the second next read threshold is determined based on a direction and a step size from the second default read threshold, which are determined based on a second difference between the second number of cells and the second target cell number,
wherein the plurality of cells includes multiple pages, each page having multiple states, and each of the first and second default read voltages distinguishes two adjacent states among the multiple states, and
wherein the first target cell number is determined based on the number of the multiple states and the number of one or more lower states as the first state, which are distinguished by the first default read voltage among the multiple states, and the second target cell number is determined based on the number of the multiple states and the number of one or more upper states as the second state, which are distinguished by the second default read voltage among the multiple states.
2. The memory system of claim 1 , wherein the plurality of cells is coupled to a word line and includes the multiple pages.
3. The memory system of claim 2 , wherein the multiple pages include a most significant bit (MSB) page, a center significant bit (CSB) page and a least significant bit (LSB) page.
4. The memory system of claim 3 , wherein the plurality of cells is programmed using Gray coding.
5. The memory system of claim 4 , wherein, when the read operation is performed for the MSB page,
the first default read threshold distinguishes between an erase state and a first program state, and the second default read threshold distinguishes between a fourth program state and a fifth program state.
6. The memory system of claim 5 , wherein the first state is the erase state and the second state is one of the fifth program state, a sixth program state and a seventh program state.
7. The memory system of claim 4 , wherein the controller stops the performing of the additional read operation when the difference between the first number of cells and the first target cell number and the difference between the second number of cells and the second target cell number are each less than a set distance.
8. The memory system of claim 4 , wherein the controller stops the performing of the additional read operation when the additional read operation has been performed more than a set number of iterations.
9. A method for operating a memory system, which includes a memory device including a plurality of cells and a controller coupled to the memory device, the method comprising:
determining default read thresholds on a 2-dimensional plane, the default read thresholds including a pair of first and second default read thresholds;
performing a read operation on the plurality of cells using the default read thresholds;
determining, based on the read operation, a first number of cells, among the plurality of cells, in a first state corresponding to the first default read threshold and a second number of cells, among the plurality of cells, in a second state corresponding to the second default read threshold;
comparing the first and second numbers of cells with first and second target cell numbers, respectively;
determining next read thresholds based on the comparing result; and
performing an additional read operation using the next read thresholds,
wherein the next read thresholds include a pair of first and second next read thresholds,
wherein the determining of the next read thresholds includes:
determining the first next read threshold based on a direction and a step size from the first default read threshold, which are determined based on a first difference between the first number of cells and the first target cell number; and
determining the second next read threshold based on a direction and a step size from the second default read threshold, which are determined based on a second difference between the second number of cells and the second target cell number,
wherein the plurality of cells includes multiple pages, each page having multiple states, and each of the first and second default read voltages distinguishes two adjacent states among the multiple states, and
wherein the first target cell number is determined based on the number of the multiple states and the number of one or more lower states as the first state, which are distinguished by the first default read voltage among the multiple states, and the second target cell number is determined based on the number of the multiple states and the number of one or more upper states as the second state, which are distinguished by the second default read voltage among the multiple states.
10. The method of claim 9 , wherein the plurality of cells is coupled to a word line and includes the multiple pages.
11. The method of claim 10 , wherein the multiple pages include a most significant bit (MSB) page, a center significant bit (CSB) page and a least significant bit (LSB) page.
12. The method of claim 11 , wherein the plurality of cells is programmed using Gray coding.
13. The method of claim 12 , wherein, when the read operation is performed for the MSB page,
the first default read threshold distinguishes between an erase state and a first program state, and the second default read threshold distinguishes between a fourth program state and a fifth program state.
14. The method of claim 13 , wherein the first state is the erase state and the second state is one of the fifth program state, a sixth program state and a seventh program state.
15. The method of claim 12 , further comprising:
stopping the performing of the additional read operation when the difference between the first number of cells and the first target cell number and the difference between the second number of cells and the second target cell number are each less than a set distance.
16. The method of claim 12 , further comprising:
stopping the performing of the additional read operation when the additional read operation has been performed more than a set number of iterations.