Method for manufacturing semiconductor substrate
Provided is a method for manufacturing a semiconductor substrate including: preparing a semiconductor substrate having a front surface on which an epitaxial layer has been formed; and forming a fracture layer on a rear surface of the semiconductor substrate before forming elements on the epitaxial layer.
1. A method for manufacturing a semiconductor substrate comprising:
preparing a semiconductor substrate having a front surface on which an epitaxial layer has been formed; and
forming a fracture layer on a rear surface of the semiconductor substrate before forming elements on the epitaxial layer; wherein
the forming of the fracture layer forms the fracture layer by grinding the rear surface of the semiconductor substrate,
the forming of the fracture layer by grinding comprises selecting an abrasive-grain diameter according to the amount of warpage of the semiconductor substrate, and
the abrasive-grain diameter is selected according to the amount of the warpage of the semiconductor before forming the fracture layer.
2. The method for manufacturing a semiconductor substrate according to claim 1 ,
wherein the forming of the fracture layer straightens warpage of the semiconductor substrate attributable to the epitaxial layer such that the semiconductor substrate becomes flat.
3. The method for manufacturing a semiconductor substrate according to claim 1 ,
wherein the forming of the fracture layer leaves warpage of the semiconductor substrate attributable to the epitaxial layer such that the warpage does not get worse in a subsequent process after forming the fracture layer.
4. The method for manufacturing a semiconductor substrate according to claim 1 ,
wherein the forming of the fracture layer leaves warpage of the semiconductor substrate attributable to the epitaxial layer such that the warpage is further straightened in a subsequent process after forming the fracture layer when some parts of the epitaxial layer are removed.
5. The method for manufacturing a semiconductor substrate according to claim 1 , further comprising:
forming elements on the epitaxial layer.
6. A method for manufacturing a semiconductor substrate comprising:
preparing a semiconductor substrate having a front surface on which an epitaxial layer has been formed;
forming a fracture layer on a rear surface of the semiconductor substrate before forming elements on the epitaxial layer; and
forming a protective film on a surface of the fracture layer before forming the elements on the epitaxial layer; wherein
the forming of the fracture layer forms the fracture layer by grinding the rear surface of the semiconductor substrate, and
the forming of the fracture layer by grinding comprises selecting an abrasive-grain diameter according to the amount of warpage of the semiconductor substrate.
7. The method for manufacturing a semiconductor substrate according to claim 6 , wherein the protective layer is a metal film.
8. The method for manufacturing a semiconductor substrate according to claim 7 ,
wherein the metal film is a metal film containing gold.
9. The method for manufacturing a semiconductor substrate according to claim 7 , further comprising:
removing a peripheral part of the fracture layer from a peripheral part of the semiconductor substrate where the metal film does not cover the fracture layer.
10. The method for manufacturing a semiconductor substrate according to claim 7 ,
wherein the metal film is a rear electrode of the semiconductor substrate.
11. The method for manufacturing a semiconductor substrate according to claim 6 ,
wherein the protective film is a resist film.
12. The method for manufacturing a semiconductor substrate according to claim 11 , further comprising:
removing a peripheral part of the fracture layer from a peripheral part of the semiconductor substrate where the resist film does not cover the fracture layer.
13. A method for manufacturing a semiconductor substrate, comprising:
preparing a substrate having a front surface on which an epitaxial layer has been formed;
grinding a rear surface of the substrate before forming elements on the epitaxial layer; and
forming a protective film on a surface of the fracture layer before forming the elements on the epitaxial layer; wherein
the forming of the fracture layer forms the fracture layer by grinding the rear surface of the semiconductor substrate, and
the forming of the fracture layer by grinding comprises selecting an abrasive-grain diameter according to the amount of warpage of the semiconductor substrate.
14. The method for manufacturing a semiconductor substrate according to claim 13 ,
wherein the grinding of the rear surface comprises selecting an abrasive-grain diameter according to the amount of warpage of the semiconductor substrate.
15. The method for manufacturing a semiconductor substrate according to claim 13 , further comprising:
forming a protective film on the rear surface of the substrate after the grinding and before forming the elements on the epitaxial layer.
16. The method for manufacturing a semiconductor substrate according to claim 15 , wherein the protective layer is a metal film.
17. The method for manufacturing a semiconductor substrate according to claim 16 ,
wherein the metal film is a metal film containing gold.
18. The method for manufacturing a semiconductor substrate according to claim 16 ,
wherein the metal film is a rear electrode of the semiconductor substrate.