Organic electronic component with electron injection layer
A device is disclosed. In an embodiment the device includes an anode, an organic active layer above the anode, an organic layer sequence above the organic active layer, a metallic layer above the organic layer sequence and a cathode above the metallic layer, wherein the metallic layer includes Yb.
1. A device comprising:
an anode;
an organic active layer above the anode;
an organic layer sequence above the organic active layer;
a cathode above the organic layer sequence; and
an encapsulation above the cathode in direct contact with the cathode,
wherein the anode is a layer stack of a plurality of layers,
wherein the organic layer sequence comprises a first organic layer and a second organic layer, and
wherein the second organic layer comprises a first partial layer and a second partial layer,
wherein a metallic layer is arranged above the organic layer sequence,
wherein the first partial layer is not doped with a metal of the metallic layer, and
wherein the second partial layer is doped with the metal of the metallic layer.
2. The device of claim 1 , wherein the cathode comprises Ag and Mg.
3. The device of claim 1 , wherein the anode comprises Ag.
4. The device of claim 1 , wherein the cathode comprises a metal which is different from a metal of the metallic layer.
5. The device of claim 1 , wherein the metallic layer has a thickness between 1 nm and 4 nm.
6. The device of claim 1 , wherein the first organic layer has a thickness between 5 nm inclusive and 60 nm inclusive.
7. The device of claim 1 , wherein the second organic layer has a thickness between 2 nm inclusive and 20 nm inclusive.
8. The device of claim 1 , wherein the metallic layer is arranged over an entire surface of the organic layer sequence, the surface facing away from the anode.
9. The device of claim 1 , wherein the cathode is arranged over an entire surface of the metallic layer, the surface facing away from the anode.
10. The device of claim 1 , further comprising a substrate, wherein the anode is above the substrate.
11. The device of claim 10 , wherein the substrate comprises a plastic material.
12. The device of claim 1 , wherein the first partial layer and the second partial layer each comprise the same organic matrix material.
13. A device comprising:
a substrate,
an anode above the substrate;
an organic active layer above the anode;
an organic layer sequence above the organic active layer;
a cathode above the organic layer sequence; and
an encapsulation above the cathode in direct contact with the cathode,
wherein the cathode comprises Ag and Mg,
wherein the anode comprises Ag,
wherein the organic layer sequence comprises a first organic layer with a thickness between 5 nm inclusive and 200 nm inclusive,
wherein the organic layer sequence comprises a second organic layer with a thickness between 2 nm inclusive and 20 nm inclusive,
wherein the second organic layer comprises a first partial layer and a second partial layer,
wherein the cathode is arranged over substantially an entire surface of the organic layer sequence, the surface facing away from the anode,
wherein the anode is a layer stack of a plurality of layers,
wherein at least one layer of the layer stack of the anode is indium tin oxide (ITO),
wherein a metallic layer is arranged above the organic layer sequence,
wherein the first partial layer is not doped with a metal of the metallic layer, and
wherein the second partial layer is doped with the metal of the metallic layer.
14. The device of claim 13 , wherein the first organic layer has a thickness between 5 nm inclusive and 60 nm inclusive.
15. The device of claim 13 , wherein the substrate comprises a plastic material.
16. A device comprising:
an anode;
an organic active layer above the anode;
an organic layer sequence above the organic active layer; and
a cathode above the organic layer sequence,
wherein the cathode is arranged over substantially an entire surface of the organic layer sequence, the surface facing away from the anode,
wherein the anode comprises Ag and indium tin oxide (ITO),
wherein the organic layer sequence comprises a first organic layer and a second organic layer,
wherein the second organic layer comprises a first partial layer and a second partial layer,
wherein a metallic layer is arranged above the organic layer sequence,
wherein the first partial layer is not doped with a metal of the metallic layer, and
wherein the second partial layer is doped with the metal of the metallic layer.
17. The device of claim 16 , wherein the cathode comprises Ag and Mg.
18. The device of claim 16 , wherein the cathode comprises a metal which is different from a the metal of the metallic layer.