Short wavelength infrared optoelectronic devices having a dilute nitride layer
Semiconductor optoelectronic devices having a dilute nitride active layer are disclosed. In particular, the semiconductor devices have a dilute nitride active layer with a bandgap within a range from 0.7 eV and 1 eV. Photodetectors comprising a dilute nitride active layer have a responsivity of greater than 0.6 A/W at a wavelength of 1.3 μm.
1. A compound semiconductor optoelectronic device, comprising:
a substrate;
a first doped III-V layer overlying the substrate;
an active region overlying the first doped III-V region, wherein,
the active region comprises a pseudomorphic dilute nitride layer;
the dilute nitride layer has a bandgap within a range from 0.7 eV and 1.0 eV; and
the dilute nitride layer has a minority carrier lifetime of 1 ns or greater at a temperature of 25° C.; and
a second doped III-V layer overlying the active region.
2. The device of claim 1 , wherein the dilute nitride layer has a compressive strain within a range from 0% and 0.4% with respect to the substrate.
3. The device of claim 1 , wherein the dilute nitride layer has a minority carrier lifetime of 2 ns or greater.
4. The device of claim 1 , wherein the substrate comprises GaAs, AlGaAs, Ge, SiGeSn, or buffered Si.
5. The device of claim 1 , wherein a difference in lattice constants between the dilute nitride layer and GaAs or Ge is less than 3%.
6. The device of claim 1 , wherein the dilute nitride layer comprises GaInNAs, GaNAsSb, GaInNAsSb, GaInNAsBi, GaNAsSbBi, GaNAsBi, or GaInNAsSbBi.
7. The device of claim 1 , wherein the dilute nitride layer comprises Ga 1-x In x N y AS 1-y-z Sb z , wherein 0≤x≤0.4, 0<y≤0.07, and 0<z≤0.04.
8. The device of claim 1 , wherein the dilute nitride layer comprises Ga 1-x In x N y As 1-y-z Sb z , where 0.12≤x≤0.24, 0.03≤y≤0.07 and 0.001≤z≤0.02;
0.12≤x≤0.24, 0.03≤y≤0.07, and 0.005≤z≤0.04; 0.13≤x≤0.20, 0.03≤y≤0.045 and 0.001≤z≤0.02; 0.13≤x≤0.18, 0.03≤y≤0.04 and 0.001≤z≤0.02; or 0.18≤x≤0.24, 0.04≤ y ≤0.07 and 0.01≤z≤0.04.
9. The device of claim 1 , wherein the dilute nitride layer has a thickness within a range from 0.2 μm to 10 μm.
10. The device of claim 1 , wherein the device comprises a photodetector.
11. The device of claim 10 , wherein the photodetector has a responsivity greater than 0.6 A/W at 1300 nm.
12. The device of claim 10 , wherein the photodetector has a responsivity greater than 0.8 A/W at 1300 nm.
13. The device of claim 1 , wherein the device comprises a light emitting diode.
14. A method of forming a semiconductor optoelectronic device, comprising:
forming a substrate;
forming a first doped III-V layer overlying the substrate;
forming an active region overlying the first doped III-V layer, wherein,
the active region comprises a pseudomorphic dilute nitride layer;
the dilute nitride layer has a bandgap within a range from 0.7 eV and 1.0 eV; and
the dilute nitride layer has a minority carrier lifetime of 1 ns or greater; and
forming a second doped III-V layer overlying the active region.
15. The method of claim 14 , wherein the dilute nitride layer comprises GaInNAs, GaNAsSb, GaInNAsSb, GaInNAsBi, GaNAsSbBi, GaNAsBi, or GaInNAsSbBi.
16. The method of claim 14 , wherein the dilute nitride layer comprises Ga 1-x In x N y AS 1-y-z Sb z , wherein 0≤x≤0.4, 0<y≤0.07, and 0<z≤0.04.
17. The method of claim 14 , wherein the dilute nitride layer comprises Ga 1-x In x N y AS 1-y-z Sb z , wherein 0.12≤x≤0.24, 0.03≤y≤0.07 and 0.001≤z≤0.02;
0.12≤x≤0.24, 0.03≤y≤0.07, and 0.005≤z≤0.04; 0.13≤x≤0.2, 0.03≤y≤0.045 and 0.001≤z≤0.02; 0.13≤x≤0.18, 0.03≤y≤0.04 and 0.001≤z≤0.02; or 0.18≤x≤0.24, 0.04≤y≤0.07 and 0.01≤z≤0.04.
18. The method of claim 14 , wherein the dilute nitride layer has a thickness within a range from 0.2 μm and 10 μm.
19. The method of claim 14 , wherein the substrate comprises GaAs, AlGaAs, Ge, SiGeSn, or buffered Si.
20. The method of claim 14 , wherein the dilute nitride layer has a lattice constant less than 3% the lattice constant of GaAs or Ge.
21. The method of claim 14 , wherein the dilute nitride layer has a compressive strain within a range from 0% and 0.4% with respect to the substrate.
22. The method of claim 21 , wherein the photodetector has a responsivity greater than 0.6 A/W at 1300 nm.
23. The method of claim 21 , wherein the photodetector has a responsivity greater than 0.8 A/W at 1300 nm.
24. The method of claim 14 , wherein the device comprises a photodetector.